Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films
View Patent ↗Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as films including silicon carbonitride, silicon oxycarbonitride, and silicon nitride (Si 3 N 4 ), and a method of depositing the silicon precursors on substrates using low temperature (e.g., <550° C.) chemical vapor deposition processes, for fabrication of ULSI devices and device structures.
1. A silicon compound of the formula:
(R 1 R 2 N) 2 HSi—SiR 3 n H 3-n
wherein R 1 , R 2 and R 3 may be the same as or different from each other and each is independently selected from the group consisting of H, C 1 -C 4 alkyl, amino, silyl groups (-SiH 3 ) and hydrocarbyl derivatives of silyl groups; and 0≦n≦3.
2. The silicon compound of claim 1 , wherein R 1 , R 2 and R 3 may be the same as or different from each other and each is independently a hydrocarbyl derivative of a silyl group.
3. The silicon compound of claim 1 , wherein R 1 , R 2 and R 3 are the same.
4. The silicon compound of claim 3 , wherein R 1 , R 2 and R 3 are selected from C 1 -C 4 alkyl.
5. The silicon compound of claim 1 , wherein R 1 , R 2 and R 3 may be the same as or different from each other and each is independently selected from the group consisting of H and C 1 -C 4 alkyl.
6. The silicon compound of claim 1 , wherein R 1 , R 2 or R 3 is a silyl group.
7. The silicon compound of claim 1 , wherein R 1 , R 2 and R 3 may be the same as or different from each other and each is independently a silyl group or a hydrocarbyl derivative of a silyl group.
8. A composition comprising a silicon compound of the formula:
(R 1 R 2 N) 2 HSi—SiR 3 n H 3-n
wherein R 1 , R 2 and R 3 may be the same as or different from each other and each is independently selected from the group consisting of H, C 1 -C 4 alkyl, amino, silyl groups (-SiH 3 ) and hydrocarbyl derivatives of silyl groups; and 0≦n≦3, and
wherein said silicon compound is in a vapor form.
9. The composition of claim 8 , further comprising an inert carrier gas.
10. The composition of claim 9 , wherein said inert carrier gas is selected from among helium, argon and nitrogen.
11. The composition of claim 8 , further comprising a co-reactant.
12. The composition of claim 11 , wherein the co-reactant is selected from among ammonia, oxygen, nitric oxide, monoalkylamines, dialkylamines, and trialkyl amines, and mixtures of two or more thereof.
13. The composition of claim 8 , further comprising a solvent.
14. The composition of claim 13 , wherein the solvent comprises a hydrocarbon solvent.
15. The composition of claim 14 , wherein the hydrocarbon solvent comprises a solvent selected from the group consisting of alkanes, alkenes, alkynes, cycloalkanes, aromatic compounds, benzene, benzene derivatives, alkanols and amines.
16. A method of forming a silicon-containing film on a substrate, comprising contacting a substrate under chemical vapor deposition conditions, at a temperature below 600° C., with a vapor of a silicon compound of the formula:
(R 1 R 2 N) 2 HSi—SiR 3 n H 3-n
wherein R 1 , R 2 and R 3 may be the same as or different from each other and each is independently selected from the group consisting of H, C 1 -C 4 alkyl, amino, silyl groups (-SiH 3 ) and hydrocarbyl derivatives of silyl groups; and 0≦n≦3.
17. The method of claim 16 , wherein R 1 , R 2 and R 3 are selected from the group consisting of C 1 -C 4 alkyl.
18. The method of claim 16 , wherein the temperature is below 550° C.
19. The method of claim 16 , wherein the vapor further comprises a co-reactant.
20. The method of claim 19 , wherein the co-reactant is selected from among ammonia, oxygen, nitric oxide, monoalkylamines, dialkylamines, and trialkyl amines, and mixtures of two or more thereof.