Semiconductor device and method for manufacturing the same
A highly reliable semiconductor device and a method for manufacturing the semiconductor device are provided. The semiconductor device is manufactured with a high yield, so that high productivity is achieved. In a semiconductor device including a transistor in which a source electrode layer and a drain electrode layer are provided over and in contact with an oxide semiconductor film, entry of impurities and formation of oxygen vacancies in an end face portion of the oxide semiconductor film are suppressed. This can prevent fluctuation in the electric characteristics of the transistor which is caused by formation of a parasitic channel in the end face portion of the oxide semiconductor film.
1. A semiconductor device comprising:
a gate electrode layer over a substrate having an insulating surface;
a gate insulating film over the gate electrode layer;
an oxide semiconductor film having a tapered end face portion over the gate insulating film;
a source electrode layer and a drain electrode layer each overlapping with the gate electrode layer and a part of the tapered end face portion; and
a first protective insulating film over the oxide semiconductor film, the source electrode layer, and the drain electrode layer,
wherein a chlorine concentration in the rest of the tapered end face portion is lower than or equal to 5×10 18 atoms/cm 3 .
2. The semiconductor device according to claim 1 , wherein a copper concentration in the rest of the tapered end face portion is lower than or equal to 1×10 18 atoms/cm 3 .
3. The semiconductor device according to claim 1 , wherein a fluorine concentration in the rest of the tapered end face portion is lower than or equal to 5×10 18 atoms/cm 3 .
4. The semiconductor device according to claim 1 , wherein a boron concentration in the rest of the tapered end face portion is lower than or equal to 1×10 16 atoms/cm 3 .
5. The semiconductor device according to claim 1 , wherein a nitrogen concentration in the rest of the tapered end face portion is lower than or equal to 1×10 17 atoms/cm 3 .
6. The semiconductor device according to claim 1 , further comprising a second protective insulating film comprising aluminum oxide over the first protective insulating film.
7. The semiconductor device according to claim 1 , wherein the oxide semiconductor film comprises indium, zinc, and one or more metal elements selected from gallium, aluminum, manganese, cobalt, tin, hafnium, and zirconium.
8. A semiconductor device comprising:
an oxide semiconductor film having a tapered end face portion over a substrate having an insulating surface;
a source electrode layer and a drain electrode layer each overlapping with a part of the tapered end face portion; and
a first protective insulating film over the oxide semiconductor film, the source electrode layer, and the drain electrode layer,
wherein a chlorine concentration in the rest of the tapered end face portion is lower than or equal to 5×10 18 atoms/cm 3 .
9. The semiconductor device according to claim 8 , wherein a copper concentration in the rest of the tapered end face portion is lower than or equal to 1×10 18 atoms/cm 3 .
10. The semiconductor device according to claim 8 , wherein a fluorine concentration in the rest of the tapered end face portion is lower than or equal to 5×10 18 atoms/cm 3 .
11. The semiconductor device according to claim 8 , wherein a boron concentration in the rest of the tapered end face portion is lower than or equal to 1×10 16 atoms/cm 3 .
12. The semiconductor device according to claim 8 , wherein a nitrogen concentration in the rest of the tapered end face portion is lower than or equal to 1×10 17 atoms/cm 3 .
13. The semiconductor device according to claim 8 , further comprising a second protective insulating film comprising aluminum oxide over the first protective insulating film.
14. The semiconductor device according to claim 8 , wherein the oxide semiconductor film comprises indium, zinc, and one or more metal elements selected from gallium, aluminum, manganese, cobalt, tin, hafnium, and zirconium.
15. A semiconductor device comprising:
an oxide semiconductor film having a tapered end face portion over a substrate having an insulating surface;
a source electrode layer and a drain electrode layer each overlapping with a part of the tapered end face portion; and
a first protective insulating film over the oxide semiconductor film, the source electrode layer, and the drain electrode layer,
wherein a concentration of chlorine in the part of the tapered end face portion is lower than a concentration of chlorine in the rest of the tapered end face portion.
16. The semiconductor device according to claim 15 , further comprising:
a gate electrode layer over the substrate; and
a gate insulating film over the gate electrode layer,
wherein the oxide semiconductor film is positioned over the gate insulating film.
17. The semiconductor device according to claim 15 , further comprising a second protective insulating film comprising aluminum oxide over the first protective insulating film.
18. The semiconductor device according to claim 15 , wherein the oxide semiconductor film comprises indium, zinc, and one or more metal elements selected from gallium, aluminum, manganese, cobalt, tin, hafnium, and zirconium.
19. A semiconductor device comprising:
an oxide semiconductor film having a tapered end face portion over a substrate having an insulating surface;
a source electrode layer and a drain electrode layer each overlapping with a part of the tapered end face portion; and
a first protective insulating film over the oxide semiconductor film, the source electrode layer, and the drain electrode layer,
wherein a concentration of an element in the part of the tapered end face portion is lower than a concentration of the element in the rest of the tapered end face portion, and
wherein the element is one of fluorine and boron.
20. The semiconductor device according to claim 19 , further comprising:
a gate electrode layer over the substrate; and
a gate insulating film over the gate electrode layer,
wherein the oxide semiconductor film is positioned over the gate insulating film.
21. The semiconductor device according to claim 19 , further comprising a second protective insulating film comprising aluminum oxide over the first protective insulating film.
22. The semiconductor device according to claim 19 , wherein the oxide semiconductor film comprises indium, zinc, and one or more metal elements selected from gallium, aluminum, manganese, cobalt, tin, hafnium, and zirconium.