IP Library Granted Patent US 9,829,780
Granted Patent B2
US 9,829,780 · App. 14/802,960 · Granted Nov 28, 2017

Laser light source for a vehicle

Inventors: James W. Raring (Goleta, CA); Paul Rudy (Goleta, CA)
Assignee: Soraa Laser Diode, Inc.
G03B21/2066F21K9/64F21S48/1145G03B21/2033H01S5/34333H04N9/3129H04N9/3161H04N13/0431H04N13/0434H04N13/0459G03B21/204
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Quick Facts
Patent No.
US 9,829,780
App. No.
14/802,960
Granted
Nov 28, 2017
Kind
B2
Abstract

The present invention is directed to a laser light source for a vehicle.

Claims (49)

1. A light apparatus for a vehicle, the apparatus comprising:

a housing to be configured to the vehicle;

an edge emitting laser diode device coupled to the housing, the edge emitting laser diode device comprising a gallium and nitrogen containing material, the edge emitting laser diode device comprising:

an n-cladding layer with a thickness from 100 nm to 5000 nm and a Si doping level of 1E17 to 3E18 cm-3;

an n-side separate confinement heterostructure (SCH) layer comprised of InGaN having a molar fraction of In of between 3% and 10% and a thickness from 20 nm to 100 nm;

multiple quantum well active region layers comprised of at least two InGaN quantum wells each having a thickness from 2 nm to 8.5 nm and separated by GaN barriers having a thickness from 2.5 nm to 8 nm;

a p-cladding layer with a thickness from 400 nm to 1000 nm with Mg doping level of 2E17 to 2E19 cm-3;

a p++-GaN contact layer with a thickness from 20 nm to 40 nm with Mg doping level of 1E19 to 1E21 cm-3; and

a non-polar or semipolar configuration characterizing the gallium and nitrogen containing material;

an optical component coupled to an output laser beam of the edge emitting laser diode device;

a phosphor material coupled to the edge emitting laser diode device to be excited by a laser beam from the edge emitting laser diode device; and

a substantially white light output from the edge emitting laser diode device.

2. The apparatus of claim 1 wherein the substantially white light output is provided in a projection system.

3. The apparatus of claim 1 wherein the phosphor material is selected from at least one of a red phosphor, a green phosphor, or a blue phosphor.

4. The apparatus of claim 1 further comprising a reflector coupled to an output of the edge emitting laser diode device.

5. The apparatus of claim 1 wherein the edge emitting laser diode device is a plurality of edge emitting laser diode devices.

6. The apparatus of claim 1 further comprising a controller coupled to the light apparatus.

7. The apparatus of claim 1 further comprising a reflector coupled to an output of the edge emitting laser diode device and a controller coupled to the light apparatus.

8. The apparatus of claim 1 wherein the optical component comprises a waveguide coupled to the edge emitting laser diode device.

9. The apparatus of claim 1 further comprising a controller coupled to the light apparatus; and a reflector coupled to an output of the edge emitting laser diode device; and wherein the optical component comprises a waveguide coupled to the edge emitting laser diode device.

10. The apparatus of claim 1 further comprising a controller coupled to the light apparatus; and a reflector coupled to an output of the edge emitting laser diode device; and wherein the optical component comprises a waveguide coupled to the edge emitting laser diode device; and further comprising a projection device coupled to the substantially white light output.

11. A light source apparatus for a vehicle comprising:

a housing to be configured to the vehicle;

a plurality of edge emitting laser diode devices disposed on a common gallium and nitrogen containing material coupled to the housing, each of the plurality of edge emitting laser diode devices configured to emit a laser beam at a different wavelength, at least one of the edge emitting laser diode devices comprising:

an n-cladding layer with a thickness from 100 nm to 5000 nm and a Si doping level of 1E17 to 3E18 cm-3;

an n-side separate confinement heterostructure (SCH) layer comprised of InGaN having a molar fraction of In of between 3% and 10% and a thickness from 20 nm to 100 nm;

multiple quantum well active region layers comprised of at least two InGaN quantum wells each having a thickness from 2 nm to 8.5 nm and separated by GaN barriers having a thickness from 2.5 nm to 8 nm;

a p-cladding layer with a thickness from 400 nm to 1000 nm with Mg doping level of 2E17 to 2E19-3; and

a p++-GaN contact layer with a thickness from 20 nm to 40 nm with Mg doping level of 1E19 to 1E21 cm-3;

an output provided on the plurality of edge emitting laser diode devices to output a laser beam; and

one or more optical members coupled to the output of the plurality of edge emitting laser diode devices, at least one of the one or more optical members comprising a phosphor material, the one or more optical members configured to output a substantially white emission.

12. The apparatus of claim 11 wherein the laser beam is characterized by a blue color.

13. The apparatus of claim 11 further comprising a reflector coupled to the one or more optical members.

14. The apparatus of claim 11 further comprising a controller coupled to the plurality of edge emitting laser diode devices.

15. A light apparatus, the apparatus comprising:

a housing to be configured to a vehicle;

an edge emitting laser diode device coupled to the housing, the edge emitting laser diode device comprising a gallium and nitrogen containing material, the edge emitting laser diode device comprising:

an n-cladding layer with a thickness from 100 nm to 5000 nm and a Si doping level of 1E17 to 3E18 cm-3;

an n-side separate confinement heterostructure (SCH) layer comprised of InGaN having a molar fraction of In of between 3% and 10% and a thickness from 20 nm to 100 nm;

multiple quantum well active region layers comprised of at least two InGaN quantum wells each having a thickness from 2 nm to 8.5 nm and separated by GaN barriers having a thickness from 2.5 nm to 8 nm;

a p-cladding layer with a thickness from 400 nm to 1000 nm with Mg doping level of 2E17 to 2E19 cm-3; and

a p++-GaN contact layer with a thickness from 20 nm to 40 nm with Mg doping level of 1E19 to 1E21 cm-3;

an optical component coupled to an output laser beam of the edge emitting laser diode device;

a color wheel having phosphor material, the color wheel coupled to the edge emitting laser diode device, the phosphor material arranged to be excited by a laser beam from the edge emitting laser diode device;

a substantially white light output from the color wheel;

a reflector coupled to an output of the edge emitting laser diode device; and

a controller coupled to the light apparatus;

wherein the optical component comprises a waveguide coupled to the edge emitting laser diode device.

16. The apparatus of claim 15 wherein the gallium and nitrogen containing material is configured from a non-polar, semipolar, or polar configuration characterizing the gallium and nitrogen containing material.

Assignments (2)
CHANGE OF NAME Recorded Mar 15, 2021
From: SORAA LASER DIODE, INC.
To: KYOCERA SLD LASER, INC.
Reel/Frame 056001/0313 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 17, 2015
From: RARING, JAMES W.; RUDY, PAUL
To: SORAA LASER DIODE, INC.
Reel/Frame 036120/0409 →
Continuity (11)
Continuation In Part 14743971 · Jun 18, 2015
Continuation 14262208 · Apr 25, 2014
Continuation 13678101 · Nov 15, 2012
Division 12789303 · May 27, 2010
Division 14802960
Continuation In Part 13938048 · Jul 9, 2013
Continuation In Part 12787343 · May 25, 2010
Provisional Application 61182105 · May 29, 2009
Provisional Application 61182106 · May 29, 2009
Provisional Application 61182104 · May 29, 2009
Related Publication 20150323143A1 · Nov 12, 2015