In-place change between transient and persistent state for data structures on non-volatile memory
Methods and apparatus related to in-place change between transient and persistent state for data structures on non-volatile memory are described. In one embodiment, controller logic causes a change in a state of a first portion of one or more non-volatile memory devices between a persistent state and a transient state and without moving data stored in the first portion of the one or more non-volatile memory devices. Other embodiments are also disclosed and claimed.
1. An apparatus comprising:
a storage device to store a bit to indicate whether a first portion of a non-volatile memory device has one of a persistent state and a transient state,
wherein completion of modification to data stored in the first portion of the non-volatile memory device is to be indicated by the stored bit having a value indicative of the persistent state.
2. The apparatus of claim 1 , wherein the completion of modification to the stored data in the first portion of the non-volatile memory device is to be indicated by the stored bit without performance of an open file operation or a close file operation.
3. The apparatus of claim 1 , wherein a change in a state of the first portion of the non-volatile memory device between the persistent state and the transient state is to be caused without moving data stored in the first portion of the non-volatile memory device.
4. The apparatus of claim 1 , wherein the non-volatile memory device is to comprise one or more of: flash memory, Phase Change Memory (PCM), 3D (3-Dimensional) Cross Point Memory, Resistive Random Access Memory, and Spin Torque Transfer Random Access Memory (STTRAM).
5. The apparatus of claim 1 , wherein the first portion is to comprise one or more bits of data.
6. The apparatus of claim 1 , wherein the bit is to be stored in the non-volatile memory device.
7. The apparatus of claim 1 , wherein the data stored in the first portion of the non-volatile memory device is to be removed in response to detection of an abnormal event and a determination that the bit and the first portion are associated.
8. The apparatus of claim 1 , wherein a state of the bit is to be changed to modify the state of the first portion of the non-volatile memory device between the persistent state and the transient state and without moving the data stored in the first portion of the non-volatile memory device.
9. The apparatus of claim 1 , wherein the non-volatile memory device and the storage device are on a same integrated circuit die.
10. The apparatus of claim 1 , wherein one or more of controller logic, memory, the non-volatile memory device, and a processor core are on a same integrated circuit die.
11. The apparatus of claim 10 , wherein a memory controller is to comprise the controller logic.
12. The apparatus of claim 1 , wherein the storage device is to comprise a register.
13. A system comprising:
non-volatile memory device;
a processor to access data stored on the non-volatile memory device;
a storage device to store a bit to indicate whether a first portion of the non-volatile memory device has one of a persistent state and a transient state,
wherein completion of modification to data stored in the first portion of the non-volatile memory device is to be indicated by the stored bit having a value indicative of the persistent state.
14. The system of claim 13 , wherein the completion of modification to the stored data in the first portion of the non-volatile memory device is to be indicated by the stored bit without performance of an open file operation or a close file operation.
15. The system of claim 13 , wherein a change in a state of the first portion of the non-volatile memory device between the persistent state and the transient state is to be caused without moving data stored in the first portion of the non-volatile memory device.
16. The system of claim 13 , wherein the non-volatile memory device is to comprise one or more of: flash memory, Phase Change Memory (PCM), 3D (3-Dimensional) Cross Point Memory, Resistive Random Access Memory, and Spin Torque Transfer Random Access Memory (STTRAM).
17. The system of claim 13 , wherein the first portion is to comprise one or more bits of data.
18. The system of claim 13 , wherein the bit is to be stored in the non-volatile memory device.
19. The system of claim 13 , wherein the data stored in the first portion of the non-volatile memory device is to be removed in response to detection of an abnormal event and a determination that the bit and the first portion are associated.
20. The system of claim 13 , wherein a state of the bit is to be changed to modify the state of the first portion of the non-volatile memory device between the persistent state and the transient state and without moving the data stored in the first portion of the non-volatile memory device.
21. The system of claim 13 , wherein the non-volatile memory device and the storage device are on a same integrated circuit die.
22. The system of claim 13 , wherein one or more of controller logic, memory, the non-volatile memory device, and the processor are on a same integrated circuit die.
23. The system of claim 13 , wherein the storage device is to comprise a register.
24. The system of claim 13 , further comprising an audio device.
25. A non-transitory computer-readable medium comprising one or more instructions that when executed on at least one processor configure the at least one processor to perform one or more operations to:
store a bit in a storage device to indicate whether a first portion of a non-volatile memory device has one of a persistent state and a transient state,
wherein completion of modification to data stored in the first portion of the non-volatile memory device is to be indicated by the stored bit having a value indicative of the persistent state.
26. The computer-readable medium of claim 25 , further comprising one or more instructions that when executed on the at least one processor configure the at least one processor to perform one or more operations to indicate the completion of modification to the stored data in the first portion of the non-volatile memory device by the stored bit without performance of an open file operation or a close file operation.
27. The computer-readable medium of claim 25 , further comprising one or more instructions that when executed on the at least one processor configure the at least one processor to perform one or more operations to cause a change in a state of the first portion of the non-volatile memory device between the persistent state and the transient state and without moving data stored in the first portion of the non-volatile memory device.
28. The computer-readable medium of claim 25 , wherein the non-volatile memory device is to comprise one or more of: flash memory, Phase Change Memory (PCM), 3D (3-Dimensional) Cross Point Memory, Resistive Random Access Memory, and Spin Torque Transfer Random Access Memory (STTRAM).
29. The computer-readable medium of claim 25 , further comprising one or more instructions that when executed on the at least one processor configure the at least one processor to perform one or more operations to store the bit in the non-volatile memory device.
30. The computer-readable medium of claim 25 , further comprising one or more instructions that when executed on the at least one processor configure the at least one processor to perform one or more operations to remove the data stored in the first portion of the non-volatile memory device in response to detection of an abnormal event and a determination that the bit and the first portion are associated.