Conductive interconnect structures incorporating negative thermal expansion materials and associated systems, devices, and methods
Semiconductor devices having interconnects incorporating negative expansion (NTE) materials are disclosed herein. In one embodiment a semiconductor device includes a substrate having an opening that extends at least partially through the substrate. A conductive material having a positive coefficient of thermal expansion (CTE) partially fills the opening. A negative thermal expansion (NTE) having a negative CTE also partially fills the opening. In one embodiment, the conductive material includes copper and the NTE material includes zirconium tungstate.
1. A method of manufacturing a semiconductor device, comprising:
partially filling an opening in a substrate with a first material, wherein the first material has a positive coefficient of thermal expansion (CTE); and
further filling the opening with a second material, wherein the second material has a negative CTE,
wherein the first material is between the substrate and the second material.
2. The method of claim 1 wherein:
partially filling the opening with the first material comprises plating a conductive material onto a sidewall of the opening; and
further filling the opening with the second material comprises depositing a negative thermal expansion material (NTE) onto at least a portion the conductive material in the opening.
3. The method of claim 2 wherein the conductive material is a first conductive material, and wherein the method further comprises:
removing a portion of the NTE material from the opening; and
after removing the portion of the NTE material, further filling the opening with a second conductive material.
4. The method of claim 3 , further comprising removing material from the substrate such that at least the first material extends completely through the substrate.
5. The method of claim 3 , further comprising forming an interconnect, wherein the interconnect includes the first and second materials.
6. A method of manufacture, comprising forming an interconnect structure, wherein:
the interconnect structure includes a conductive material and a negative thermal expansion (NTE) material within at least a portion of the conductive material; and
the interconnect structure has a composite coefficient of thermal expansion (CTE) based, at least in part, on a volume of the NTE material within the conductive material.
7. The method of claim 6 wherein:
the conductive material has a coefficient of thermal expansion (CTE) that is greater than zero;
the NTE material has a CTE that is less than zero.
8. The method of claim 6 , further comprising forming a volume of the conductive material on a semiconductor substrate, wherein the volume of the conductive material is based on the composite CTE.
9. The method of claim 8 wherein the interconnect structure includes at least one of a contact pad and a conductive trace.
10. The method of claim 6 wherein forming the interconnect structure further comprises forming at least a portion of the interconnect structure within an opening in a semiconductor substrate.
11. The method of claim 6 wherein a volume of the opening is based on the composite CTE.
12. The method of claim 10 wherein the interconnect structure includes a conductive via.
13. A method of manufacture, comprising forming an interconnect structure:
disposing a first material in an opening in a substrate,
wherein the first material has a positive coefficient of thermal expansion (CTE); and
disposing a second material in the opening in the substrate,
wherein the second material has a negative CTE, and
wherein the first material is between the substrate and the second material.
14. The method of claim 13 wherein:
disposing the first material in the opening comprises plating a conductive material onto a sidewall of the opening; and
disposing the second material in the opening comprises depositing a negative thermal expansion material (NTE) onto at least a portion the conductive material in the opening.
15. The method of claim 13 wherein: the first material includes copper, and the second material includes Zr(WO 4 ) 2 .
16. The method of claim 13 wherein: the second material includes ZrV 2 O 7 .
17. The method of claim 13 wherein: the second material includes ZrMo 2 O 8 , ZrW 2 O 8 , HfMo 2 O 8 , or HfW 2 O 8 , or a combination thereof.
18. The method of claim 13 wherein: the second material includes Zr 2 (MoO 4 ) 3 , Zr 2 (WO 4 ) 3 , Hf 2 (MoO 4 ) 3 , Hf 2 (WO 4 ) 3 , or a combination thereof.
19. The method of claim 13 wherein: the first material includes at least one of copper, aluminum, tungsten, silver, gold, and platinum.