Self-forming embedded diffusion barriers
View Patent ↗Interconnect structures containing metal oxide embedded diffusion barriers and methods of forming the same. Interconnect structures may include an M x level including an M x metal in an M x dielectric, an M x+1 level above the M x level including an M x+1 metal in an M x+1 dielectric, an embedded diffusion barrier adjacent to the M x+1 dielectric; and a seed alloy region adjacent to the M x+1 metal separating the M x metal from the M x+1 metal. The embedded diffusion barrier may include a barrier-forming material such as manganese, aluminum, titanium, or some combination thereof. The seed alloy region may include a seed material such as cobalt, ruthenium, or some combination thereof.
1. An interconnect structure consisting of:
an M x level including an M x metal in an M x dielectric;
an M x+1 level above the M x level including an M x+1 metal in an M x+1 dielectric;
an embedded diffusion barrier located between the M x+1 dielectric and the M x+1 metal, wherein the embedded diffusion barrier comprises a metal oxide from the M x+1 dielectric and a barrier metal; and
a seed alloy region, wherein a portion of the seed alloy region is located between the M x+1 metal and M x+1 dielectric, and another portion of the seed alloy region is located between the M x+1 metal and the M x metal, and wherein the seed alloy comprises cobalt.
2. The interconnect structure of claim 1 , wherein the barrier metal is selected from the group consisting of manganese, aluminum, titanium, or some combination thereof.
3. The interconnect structure of claim 1 , wherein the embedded diffusion barrier comprises a metal oxide and one or more of the group consisting of cobalt and ruthenium.
4. The interconnect structure of claim 1 , wherein the seed alloy has a thickness of approximately 1 nm to approximately 10 nm.
5. The interconnect structure of claim 1 , wherein the embedded diffusion barrier has a thickness of approximately 1 nm to approximately 10 nm.