Correlating physical page addresses for soft decision decoding
View Patent ↗A storage device may include a processor and a memory device including a multilevel memory cell. The processor may correlate a first physical page address and a second physical page address, each address being associated with the multilevel memory cell. The processor also may apply a first read operation to the memory cell to determine a value of a first bit associated with the first physical page address. The processor additionally may apply at least a second read operation to the multilevel memory cell to determine a value of a second bit associated with the second physical page address. The processor may determine, based at least in part on the value of the first bit and the value of the second bit, a soft decision value associated with the second bit. The processor may verify the value of the second bit based at least in part on the soft decision value.
1. A method comprising:
correlating, by at least one processor, a first physical page address associated with a multilevel memory cell and a second physical page address associated with the multilevel memory cell;
causing, by the at least one processor, at least a first read operation to be applied the multilevel memory cell to determine a value of a first bit associated with the first physical page address;
causing, by the at least one processor, at least a second read operation to be applied the multilevel memory cell to determine a value of a second bit associated with the second physical page address;
determining, by the at least one processor, a soft decision value associated with the second bit based on the value of the first bit and the value of the second bit; and
verifying, by the at least one processor, based at least in part on the soft decision value information associated with the second bit, the value of the second bit.
2. The method of claim 1 , wherein the first physical page address comprises a physical page address associated with an upper page of the multilevel memory cell, and wherein the second physical page address comprises a physical page address associated with a lower page of the multilevel memory cell.
3. The method of claim 1 , wherein:
the multilevel memory cell comprises a two-bit-per-cell memory cell;
causing at least the first read operation to be applied the multilevel memory cell comprises causing two read reference voltages to be applied to the two-bit-per-cell memory cell to determine the value of the first bit;
causing at least the second read operation to be applied to the multilevel memory cell comprises applying one read reference voltage to the two-bit-per-cell memory cell; and
verifying the value of the second bit comprises determining, by the processor, a log -likelihood-ratio and utilizing the log-likelihood-ratio in an error correction code utilized to verify the second bit.
4. The method of claim 3 , wherein the log-likelihood-ratio comprises a large absolute value when the first bit is equal to 1and a small absolute value when the first bit is equal to 0.
5. The method of claim 4 , wherein:
a first cell voltage state has a voltage lower than the first read reference voltage, the second read reference voltage, and the third read reference voltage;
a second cell voltage state has a voltage greater than the first read reference voltage and less than the second read reference voltage and the third read reference voltage;
a third cell voltage state has a voltage greater than the second read reference voltage and less than the third read reference voltage;
a voltage difference between the first cell voltage state and the second cell voltage state is greater than a voltage difference between the second cell voltage state and the third voltage state.
6. The method of claim 1 , wherein correlating the first physical page address associated with the multilevel memory cell and the second physical page address associated with the multilevel memory cell comprises associating, by the processor, data read from the first physical page address and data read from the second physical page address in a read cache.
7. A storage device comprising:
at least one memory device comprising at least one multilevel memory cell;
at least one processor configured to:
correlate a first physical page address associated with the multilevel memory cell and a second physical page address associated with the multilevel memory cell;
cause at least a first read operation to be applied to the multilevel memory cell to determine a value of a first bit associated with the first physical page address;
cause at least a second read operation to be applied to the multilevel memory cell to determine a value of a second bit associated with the second physical page address; determine a soft decision value associated with the second bit based at least in part on the value of the first bit and the value of the second bit; and
verify, based at least in part on the soft decision value associated with the second bit, the value of the second bit.
8. The storage device of claim 7 , wherein the first physical page address comprises a physical page address associated with an upper page of the multilevel memory cell, and wherein the second physical page address comprises a physical page address associated with a lower page of the multilevel memory cell.
9. The storage device of claim 7 , wherein:
the multilevel memory cell comprises a two-bit-per-cell memory cell;
the at least one processor is configured to cause a first read reference voltage to be applied to the two-bit-per-cell memory cell and cause a second, different read reference voltage to be applied to the two-bit-per-cell memory cell to determine the value of the first bit associated with the first physical page address;
the at least one processor is configured to cause a third, different read reference voltage to be applied to the two-bit-per-cell memory cell to determine the value of the second bit;
the third, different read reference voltage has a magnitude between the first read reference voltage and the second, different read reference voltage; and
the at least one processor is configured to verify the value of the second bit by at least determining a log-likelihood-ratio and utilizing the log-likelihood-ratio in an error correction code utilized to verify the second bit.
10. The storage device of claim 9 , wherein the log-likelihood-ratio comprises a large absolute value when the first bit is equal to 1 and a small absolute value when the first bit is equal to 0.
11. The storage device of claim 10 , wherein:
a first cell voltage state has a voltage lower than the first read reference voltage, the second read reference voltage, and the third read reference voltage;
a second cell voltage state has a voltage greater than the first read reference voltage and less than the second read reference voltage and the third read reference voltage;
a third cell voltage state has a voltage greater than the second read reference voltage and less than the third read reference voltage;
a voltage difference between the first cell voltage state and the second cell voltage state is greater than a voltage difference between the second cell voltage state and the third voltage state.
12. The storage device of claim 7 , wherein the at least one processor is configured to correlate the first physical page address associated and the multilevel memory cell and the second physical page address associated with the multilevel memory cell by at least associating data read from the first physical page address and data read from the second physical page address in a read cache.
13. The storage device of claim 7 , wherein the at least one processor comprises at least one of a controller of the storage device or a read channel of the storage device.
14. A storage device comprising:
at least one memory device comprising at least one multilevel memory cell;
means for correlating a first physical page address associated with the multilevel memory cell and a second physical page address associated with the multilevel memory cell;
means for applying at least a first read operation to the multilevel memory cell to determine a value of a first bit associated with the first physical page address;
means for applying at least a second read operation to the multilevel memory cell to determine a value of a second bit associated with the second physical page address;
means for determining a soft decision value based at least in part on the value of the first bit and the value of the second bit; and
means for verifying, based at least in part on the soft decision value, the value of the second bit.