Epitaxial and silicide layer formation at top and bottom surfaces of semiconductor fins
A method of making a semiconductor device includes forming a fin in a substrate; depositing a first spacer material to form a first spacer around the fin; depositing a second spacer material to form a second spacer over the first spacer; recessing the first spacer and the second spacer; removing the first spacer; and performing an epitaxial growth process to form epitaxial growth on an end of the fin, along a sidewall of the fin, and adjacent to the fin.
1. A semiconductor device, comprising:
a first fin and a second fin patterned in a substrate;
an epitaxial growth on ends of the first fin and the second fin, directly on a sidewalls of the first fin and the second fin, and between the first fin and the second fin, the epitaxial growth between the first fin and the second fin being a continuous layer extending from a sidewall of the first fin to a sidewall of the second fin, and arranged directly on a shallow trench isolation region arranged on the substrate, forming a triangular or diamond shaped growth on the shallow trench isolation region, and completely covering a surface of the shallow trench isolation region between the first fin and the second fin; and
dielectric fin spacers arranged directly on and covering the epitaxial growth on the sidewall of the first fin and the second fin.
2. The semiconductor device of claim 1 , wherein the epitaxial growth along the sidewalls has a thickness in a range from about 2 to about 10 nm.
3. The semiconductor device of claim 1 , further comprising a metal silicide liner over the epitaxial growth.
4. The semiconductor device of claim 3 , wherein the metal silicide liner wraps around the epitaxial growth.
5. The semiconductor device of claim 1 , wherein the epitaxial growth on the ends of the fins is diamond-shaped.
6. The semiconductor device of claim 1 , wherein the epitaxial growth on the ends of the fins has a thickness in a range from about 2 to about 10 nm.
7. A semiconductor device, comprising:
a first fin and a second fin patterned in a substrate;
an epitaxial growth on ends of the first fin and the second fin, directly on sidewalls of the first fin and the second fin, and between the first fin and the second fin, the epitaxial growth between the first fin and the second fin being arranged directly on a shallow trench isolation region arranged on the substrate, being continuous with the epitaxial growth along sidewalls, having a triangular or diamond shape that extends from a horizontal surface of the shallow trench isolation region, and completely covering a surface of the shallow trench isolation region between the first fin and the second fin; and
dielectric fin spacers arranged directly on and completely covering the epitaxial growth on the sidewall of the first fin and the second fin;
wherein the epitaxial growth forms source/drain regions.