FinFET PCM access transistor having gate-wrapped source and drain regions

1. A fin-type field effect transistor (FinFET) device comprising:

at least one source region having multiple sides;

at least one drain region having multiple sides, the at least one drain region formed adjacent the at least one source region;

at least one channel region having multiple sides, the at least one channel region positioned substantially between and below the at least one source region and the at least one drain region;

at least one gate region formed substantially above the at least one channel region;

wherein the at least one gate region is further formed to wrap around the multiple sides of the at least one drain region and a portion of the multiple sides of the at least one source region; and

a common source substrate coupled to the at least one source region.

2. The device of claim 1 , wherein the at least one drain region comprises a drain contact region coupled to a drain pillar region.

3. The device of claim 2 , wherein the drain contact region comprises a level of doping equal to approximately one dopant atom per 10,000 atoms.

4. The device of claim 2 , wherein the drain pillar region comprises a level of doping equal to approximately one dopant atom per 100,000,000 atoms.

5. A fin-type field effect transistor (FinFET) device comprising:

a first drain region having multiple sides;

a second drain region having multiple sides, the second drain region positioned adjacent and separate from the first drain region;

a shared source region having multiple sides, the shared source region positioned between the first drain region and the second drain region;

a first gate region wrapped around the multiple sides of the first drain region and a portion of the multiple sides of the shared source region; and

a second gate region wrapped around the multiple sides of the second drain region and a distinct portion of the multiple sides of the shared source region,

wherein the first gate region and the second gate region combine to wrap around the entirety of the multiple sides of the shared source region.

6. The device of claim 5 , wherein:

the first gate region is wrapped around a first side of the multiple sides of the shared source region; and

the second gate region is wrapped around a second side of the multiple sides of the shared source region, the second side of the multiple sides of the shared source region opposite the first side of multiple sides of the shared source region.

7. The device of claim 6 , further comprising:

a dielectric region positioned between the first gate region and the second gate region, the dielectric region covering opposite sides of the multiple sides of the shared source region formed between the first side and the second side.

8. The device of claim 5 , further comprising:

a first channel region having multiple sides, the first channel region positioned substantially between and below the shared source region and the first drain region; and

a second channel region having multiple sides, the second channel region positioned substantially between and below the shared source region and the second drain region.

9. A single fin-type field effect transistor (FinFET) device for a phase change memory (PCM), the single FinFET device comprising:

a drain region having multiple sides;

a shared source region having multiple sides, the shared source region positioned adjacent and separate from the drain region;

a channel region having multiple sides, the channel region positioned substantially between and below the shared source region and the drain region;

a gate region wrapped around the multiple sides of the drain region and a portion of the multiple sides of the shared source region,

wherein the shared source region is shared and included in a distinct FinFET device for the PCM; and

a common source substrate coupled to the shared source region.