Semiconductor memory device

1. A semiconductor memory device comprising:

a plurality of first chips, each of the plurality of first chips including a memory cell array, the first chips being stacked in a multi-stage; and

a second chip, the second chip including a first circuit that outputs, when a first command is received from a controller, a first signal to one of the plurality of first chips, the first command being a command for acquiring status information from the plurality of first chips, the plurality of first chins and the second chin being stacked, wherein

each of the plurality of first chips includes:

a third circuit that shifts, in synchronization with a first clock signal, the first signal received from the second chip or the first chip of a previous stage and outputs the shifted first signal to the first chip of a next stage, and

a second circuit that outputs the status information at a timing based on the first signal received from the second chip or the shifted first signal received from the first chip of the previous stage, the status information including pass/fail information of a program process and an erase process to the memory cell array, ready/busy information, or record protect information; and

the second chip includes a fourth circuit that receives, in a serial manner, a plurality of status information outputted from the plurality of first chips, in synchronization with the first clock signal.

2. The semiconductor memory device according to claim 1 ,

wherein the first chips include one or a plurality of third chips and one or a plurality of fourth chips, the third chips sharing a first chip enable signal, the fourth chips sharing a second chip enable signal,

a second circuit of the third chip outputs status information in a case where the first chip enable signal is assert,

a second circuit of the fourth chip outputs status information in a case where the second chip enable signal is assert,

the third chip further includes a fifth circuit, the fifth circuit selecting an output of the third circuit of the third chip in a case where the first chip enable signal is assert, selecting an input of the third circuit of the third chip in a case where the first chip enable signal is negate, and outputting the selected signal to the first chip of the next stage, and

the fourth chip further includes a sixth circuit, the sixth circuit selecting an output of the third circuit of the fourth chip in a case where the second chip enable signal is assert, selecting an input of the third circuit of the fourth chip in a case where the second chip enable signal is negate, and outputting the selected signal to the first chip of the next stage.

3. The semiconductor memory device according to claim 2 ,

wherein the second chip includes a seventh circuit that outputs the first and second chip enable signals received from the controller to the plurality of first chips, and

the first chip includes eighth circuit that identifies whether the input first and second chip enable signals are signals for its own chip.

4. The semiconductor memory device according to claim 2 , wherein the second circuit outputs the status information in synchronization with the first clock signal.

5. The semiconductor memory device according to claim 4 ,

wherein the second circuit further includes a ninth circuit that generates a second clock signal based on the first signal received from the second chip or the first signal received from the first chip of the previous stage and the first clock signal,

the second circuit outputs the status information by using the second clock signal as a trigger, and

the fourth circuit receives the status information based on the second clock signal.

6. The semiconductor memory device according to claim 5 , wherein the third circuit includes:

a first flip flop that latches the first signal received from the second chip or the first chip of the previous stage based on the first clock signal; and

a second flip flop that latches an output of the first flip flop based on an inverted signal of the first clock signal.

7. The semiconductor memory device according to claim 6 , wherein the ninth circuit is an AND circuit that performs logical AND operation between the output of the first flip flop and an inverted signal of an output of the second flip flop and outputs the second clock signal.

8. The semiconductor memory device according to claim 5 , wherein the plurality of first chips include a plurality of through silicon vias for transmitting the first signal, the first and second clock signals, the status information, and the first and second chip enable signals.

9. The semiconductor memory device according to claim 5 , comprising two or more sets of signal lines for transmitting the second clock signal and the status information.

10. A semiconductor memory device comprising a plurality of first chips, each of the plurality of first chips including a memory cell array,

wherein the first chip includes

a second circuit that shifts, in synchronization with a first clock signal, a first signal received from the first chip of the previous stage and outputs the shifted first signal to the first chip of a next stage

a first circuit that outputs status information at a timing based on the shifted first signal received from the first chip of the previous stage, the status information including pass/fail information of a program process and an erase process to the memory cell array, ready/busy information, or record protect information.

11. The semiconductor memory device according to claim 10 ,

wherein the first chips include one or a plurality of third chips and one or a plurality of fourth chips, the third chips sharing a first chip enable signal, the fourth chip sharing a second chip enable signal,

a first circuit of the third chip outputs the status information in a case where the first chip enable signal is assert,

a first circuit of the fourth chip outputs the status information in a case where the second chip enable signal is assert,

the third chip further includes a third circuit, the third circuit selecting an output of the second circuit of the third chip in a case where the first chip enable signal is assert, selecting an input of the second circuit of the third chip in a case where the first chip enable signal is negate, and outputting the selected signal to the first chip of the next stage, and

the fourth chip further includes a fourth circuit, the fourth circuit selecting an output of the second circuit of the fourth chip in a case where the second chip enable signal is assert, selecting an input of the second circuit of the fourth chip in a case where the second chip enable signal is negate, and outputting the selected signal to the first chip of the next stage.

12. The semiconductor memory device according to claim 11 , wherein the first chip includes fifth circuit that identifies whether the input first and second chip enable signals are signals for its own chip.

13. The semiconductor memory device according to claim 12 , wherein the first circuit outputs the status information in synchronization with the first clock signal.

14. The semiconductor memory device according to claim 13 ,

wherein the first circuit further includes a sixth circuit that generates a second clock signal based on the first signal received from the first chip of the previous stage and the first clock signal, the second clock signal being a signal for receiving the status information, and

the first circuit outputs the status information by using the second clock signal as a trigger.

15. The semiconductor memory device according to claim 14 , wherein the second circuit includes:

a first flip flop that latches the first signal received from the first chip of the previous stage based on the first clock signal; and

a second flip flop that latches an output of the first flip flop based on an inverted signal of the first clock signal.

16. The semiconductor memory device according to claim 15 , wherein the sixth circuit is an AND circuit that performs logical AND operation between the output of the first flip flop and an inverted signal of an output of the second flip flop and outputs the second clock signal.

17. The semiconductor memory device according to claim 14 , wherein the plurality of first chips include a plurality of through silicon vias for transmitting the first signal, the first and second clock signals, the status information, and the first and second chip enable signals.

18. A semiconductor memory device comprising:

a first chip, a second chip, and a third chip, the second chip including a first memory cell array, the third chip including a second memory cell array, the first, second, and third chips being stacked; wherein

the first chip includes a first circuit that outputs, when a first command is received from a controller, a first signal to the second chip;

the second chip includes:

a second circuit that shifts, in synchronization with a first clock signal, the first signal received from the first chip and outputs the shifted first signal to the third chip, and

a third circuit that outputs first status information at timing based on the first signal received from the first chip;

the third chip includes:

a fourth circuit that shifts, in synchronization with the first clock signal, the shifted first signal received from the second chip, and

a fifth circuit that outputs second status information at timing based on the shifted first signal received from the second chip; and

the first chip further includes:

a sixth circuit that receives, in a serial manner, the first status information outputted from the second chip and the second status information outputted from the third chip.