Patent Assignment
Reel/Frame 058785/0124
Merger and Change of Name
Recorded: 2022-01-20
Pages: 51
Assignee
TOSHIBA MEMORY CORPORATION
1-1, SHIBAURA 1-CHOME, MINATO-KU, TOKYO, JAPAN
Covered Properties
(85)
Alignment Sensing Method for Semiconductor Device
Non-Volatile Semiconductor Memory with Large Erase Blocks Storing Cycle Counts
Behavior Based Programming of Non-Volatile Memory
Method of Manufacturing Semiconductor Device
Wafer Flatness Evaluation Method, Wafer Flatness Evaluation Apparatus Carrying Out the Evaluation Method, Wafer Manufacturing Method Using the Evaluation Method, Wafer Quality Assurance Method Using the Evaluation Method, Semiconductor Device Manufacturing Method U
Non-Volatile Semiconductor Memory Device, Electronic Card Using the Same and Electronic Apparatus
Nand Flash Memory and Blank Page Search Method Therefor
Non-Volatile Semiconductor Memory with Large Erase Blocks Storing Cycle Counts
Memory System Which Copies Successive Pages, and Data Copy Method Therefor
Non-Volatile Semiconductor Memory Device, Electronic Card Using the Same and Electronic Apparatus
Nand Flash Memory and Blank Page Search Method Therefor
Method for Manufacturing Soi Substrate
Nand Flash Memory and Blank Page Search Method Therefor
Wafer Flatness Evaluation Method, Wafer Flatness Evaluation Apparatus Carrying Out the Evaluation Method, Wafer Manufacturing Method Using the Evaluation Method, Wafer Quality Assurance Method Using the Evaluation Method, Semiconductor Device Manufacturing Method U
Wafer Flatness Evaluation Method, Wafer Flatness Evaluation Apparatus Carrying Out the Evaluation Method, Wafer Manufacturing Method Using the Evaluation Method, Wafer Quality Assurance Method Using the Evaluation Method, Semiconductor Device Manufacturing Method U
Method of Manufacturing Soi Substrate
Defect Gradient to Boost Nonvolatile Memory Performance
Nonvolatile Resistive Memory Element with a Passivated Switching Layer
Nonvolatile Memory Device Using a Tunnel Oxide as a Current Limiter Element
Current-Limiting Layer and a Current-Reducing Layer in a Memory Device
Pattern Test Apparatus
Resistance Change Memory
Memory Device
Resistance Change Memory
Resistance Change Memory
Memory Device
Resistance Change Memory
Nonvolatile Random Access Memory
Temperature sensor with Successive AD conversion with selective comparisons
Resistance Change Memory and Test Method of the Same
Semiconductor Memory Device
Resistance Change Memory
Nonvolatile Random Access Memory Including Control Circuit Configured to Receive Commands at High and Low Edges of One Clock Cycle
Resistance Change Memory
Semiconductor Memory Device
Semiconductor Memory Device
Memory Device
Storage Device
Semiconductor Memory Device
Nonvolatile Random Access Memory Including Control Circuit Configured to Receive Commands at High and Low Edges of One Clock Cycle
Semiconductor Device and Method for Manufacturing the Same
Distortion Reduction of Memory Openings in a Multi-Tier Memory Device Through Thermal Cycle Control
Patent:
10,224,240 →
Application:
15/635,023 →
Semiconductor Memory Device
Semiconductor Device and Method for Manufacturing the Same
Memory Device Controlling Including Reading from a First Memory and Writing to a Second Memory Based on Timing and Control Signals
Semiconductor Device with Sealed Semiconductor Chip
Semiconductor Device and Method of Manufacturing the Same
Semiconductor Storage Device and Memory System Including Semiconductor Storage Device and Controller
Memory System for Restraining Threshold Variation to Improve Data Reading
Memory System Including the Semiconductor Memory and a Controller
Semiconductor Memory Device Capable of Reducing Chip Size
Voltage Generation Circuit Which Is Capable of Executing High-Speed Boost Operation
Controlling Method of a Memory Card
Semiconductor Storage Device with Volatile and Nonvolatile Memories to Allocate Blocks to a Memory and Release Allocated Blocks
Semiconductor Memory Device
Semiconductor Device and Memory System
Semiconductor Memory Device Which Stores Plural Data in a Cell
Semiconductor Memory Device for Storing Multivalued Data
Information Processing System Including Host Device and Memory System
Multi-Bit Memory System with Adaptive Read Voltage Controller
Memory Device, Host Device, Memory System, Memory Device Control Method, Host Device Control Method and Memory System Control Method
Patent:
49,235 →
Application:
17/135,608 →
Memory System Performing Read Operation with Read Voltage
Semiconductor Memory
Semiconductor Device
Memory System
Semiconductor Memory Device
System, Device, and Method for Initializing a Plurality of Electronic Devices Using a Single Packet
Patent:
49,682 →
Application:
17/176,474 →
Semiconductor Memory System Including First and Second Semiconductor Memory Chips and a Common Signal Line
Memory System
Memory Device and Host Device
Semiconductor Device
Patent:
49,424 →
Application:
17/199,945 →
Data Reading and Writing Processing from and to a Semiconductor Memory and a Memory of a Host Device by Using First and Second Interface Circuits
Semiconductor Memory Device with Memory Cells Each Including a Charge Accumulation Layer and a Control Gate
Controller That Acquires Status of Nonvolatile Memory and Control Method Thereof
Semiconductor Memory Device
Method for Transferring Data on a Memory Card in Synchonism with a Rise Edge and a Fall Edge of a Clock Signal
Semiconductor Memory Device and Method of Controlling the Same
Semiconductor Memory Device with First and Second Sense Amplifiers
Semiconductor Storage Device and Memory System
Nonvolatile Semiconductor Memory Including a Read Operation
Semiconductor Memory Device
Information Processing System
Memory System Having High Data Transfer Efficiency and Host Controller
Patent:
49,875 →
Application:
17/396,421 →
Semiconductor Device and Memory System
Memory System Including the Semiconductor Memory and a Controller
Related Assignments
(19)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest
Feb 13, 2009
From: FUJITSU LIMITED
To: FUJITSU MICROELECTRONICS LIMITED
Reel/Frame 022248/0521 →
Change of Name
Jul 9, 2010
From: FUJITSU MICROELECTRONICS LIMITED
To: FUJITSU SEMICONDUCTOR LIMITED
Reel/Frame 024651/0744 →
Assignment of Assignor's Interest
Aug 1, 2013
From: OGAWA, RIKI; HIRONO, MASATOSHI
To: NUFLARE TECHNOLOGY, INC.; KABUSHIKI KAISHA TOSHIBA
Reel/Frame 030925/0209 →
Assignment of Assignor's Interest
May 17, 2016
From: TAKAHASHI, MASAHIRO; KIM, DONG KEUN; YIM, HYUCK SANG
To: KABUSHIKI KAISHA TOSHIBA
Reel/Frame 038620/0444 →
Corrective Assignment to Correct the Assignees Previously Recorded on Reel 038620 Frame 0444. Assignor(S) Hereby Confirms the Assignment.
Jun 16, 2016
From: KIM, DONG KEUN; YIM, HYUCK SANG; TAKAHASHI, MASAHIRO
To: SK HYNIX INC.; KABUSHIKI KAISHA TOSHIBA
Reel/Frame 039041/0341 →
Assignment of Assignor's Interest
Aug 3, 2016
From: SANDISK CORPORATION
To: SANDISK TECHNOLOGIES LLC
Reel/Frame 039551/0231 →
Change of Address
Dec 23, 2016
From: FUJITSU SEMICONDUCTOR LIMITED
To: FUJITSU SEMICONDUCTOR LIMITED
Reel/Frame 041188/0401 →
Demerger
Aug 22, 2017
From: KABUSHIKI KAISHA TOSHIBA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 043619/0871 →
Assignment of Assignor's Interest
Dec 7, 2017
From: KABUSHIKI KAISHA TOSHIBA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 044327/0544 →
Assignment of Assignor's Interest
Dec 8, 2017
From: KABUSHIKI KAISHA TOSHIBA
To: TOSHIBA MEMORY CORPORATION; SK HYNIX, INC.
Reel/Frame 044342/0548 →
Assignment of Assignor's Interest
Dec 13, 2017
From: KABUSHIKI KAISHA TOSHIBA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 044384/0054 →
Assignment of Assignor's Interest
Dec 13, 2017
From: KABUSHIKI KAISHA TOSHIBA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 044380/0417 →
Assignment of Assignor's Interest
Dec 13, 2017
From: KABUSHIKI KAISHA TOSHIBA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 044377/0632 →
Assignment of Assignor's Interest
May 18, 2018
From: KABUSHIKI KAISHA TOSHIBA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 045842/0293 →
Corporate Address Change
May 30, 2018
From: NUFLARE TECHNOLOGY, INC.
To: NUFLARE TECHNOLOGY, INC.
Reel/Frame 046269/0344 →
Assignment of Assignor's Interest
May 30, 2018
From: NUFLARE TECHNOLOGY, INC.
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 045936/0530 →
Assignment of Assignor's Interest
Sep 10, 2018
From: FUJITSU SEMICONDUCTOR LIMITED
To: KABUSHIKI KAISHA TOSHIBA; WINBOND ELECTRONICS CORP.
Reel/Frame 046829/0628 →
Assignment of Assignor's Interest
Apr 5, 2019
From: KABUSHIKI KAISHA TOSHIBA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 048806/0744 →
Change of Name
Jan 20, 2022
From: TOSHIBA MEMORY CORPORATION
To: KIOXIA CORPORATION
Reel/Frame 058785/0197 →