IP Library Granted Patent US 7,394,704
Granted Patent B2
US 7,394,704 · App. 11/289,509 · Granted Jul 1, 2008

Non-volatile semiconductor memory device, electronic card using the same and electronic apparatus

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Quick Facts
Patent No.
US 7,394,704
App. No.
11/289,509
Granted
Jul 1, 2008
Kind
B2
Abstract

A non-volatile semiconductor memory device comprising a plurality of non-volatile semiconductor memory cells, an interface making data exchange with an external device to write/read data with respect to the non-volatile semiconductor memory cells, and a control circuit for controlling the non-volatile semiconductor memory cells, wherein the interface and the control circuit include a first read mode initialized via a first bootstrap to read data from the non-volatile semiconductor memory cells for continuously outputting (N+M)-byte (N is the n-th power of 2, n is positive integers) data via the interface, and a second read mode initialized via a second bootstrap to read data from the non-volatile semiconductor memory cells for continuously outputting K-byte (K is the k-th power of 2, k is positive integers) data via the interface.

Claims (11)

1. A non-volatile semiconductor memory device comprising:

a plurality of non-volatile semiconductor memory cells;

an interface; and

a control circuit for controlling the non-volatile semiconductor memory cells,

wherein the device supports a first output mode for continuously outputting (N+M)-byte (N is the n-th power of 2, n is a positive integer) data via the interface, and a second output mode for continuously outputting K-byte (K is the k-th power of 2, k is a positive integer) data via the interface, and

wherein the first output mode is substantially transferred to output standby state after continuously outputting the data, and the second output mode is automatically transferred to a normal operation mode after continuously outputting the data.

2. The device according to claim 1 , wherein, in the first output mode, (N+M)-byte (N is the n-th power of 2, n is a positive integer, N>M) data is outputted.

3. The device according to claim 1 , wherein the plurality of non-volatile semiconductor memory cells include a ROM area configured to store system boot programs and an area except for the ROM area, and in the second read mode, K(K>N) byte data is read from the ROM area.

4. The device according to claim 1 , wherein the second output mode is booted according to a hardware reset signal supplied from an external device.

5. The device according to claim 1 , wherein the second output mode is booted based on a software reset command supplied from an external device.

6. The device according to claim 1 , wherein during the second output mode, part of the data inputted to the interface is invalidated.

Assignments (4)
MERGER AND CHANGE OF NAME Recorded Jan 20, 2022
From: TOSHIBA MEMORY CORPORATION; K.K. PANGEA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 058785/0124 →
CHANGE OF NAME Recorded Jan 20, 2022
From: TOSHIBA MEMORY CORPORATION
To: KIOXIA CORPORATION
Reel/Frame 058785/0197 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 18, 2018
From: KABUSHIKI KAISHA TOSHIBA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 045842/0293 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 3, 2016
From: SANDISK CORPORATION
To: SANDISK TECHNOLOGIES LLC
Reel/Frame 039551/0231 →