Patent Assignment
Reel/Frame 039551/0231
Assignment of Assignor's Interest
Recorded: 2016-08-03
Pages: 12
Assignor
SANDISK CORPORATION
Executed: 2016-07-12
Assignee
SANDISK TECHNOLOGIES LLC
6900 DALLAS PARKWAY, SUITE 325, PLANO, TEXAS, 75024
Covered Properties
(45)
Operating Techniques for Reducing Effects of Coupling Between Storage Elements of a Non-Volatile Memory Operated in Multiple Data States
Non-Volatile Semiconductor Memory Device Adapted to Store a Multi-Valued Data in a Single Memory Cell
Multi-State Nonvolatile Memory Capable of Reducing Effects of Coupling Between Storage Elements
Non-Volatile Semiconductor Memory with Large Erase Blocks Storing Cycle Counts
Nonvolatile Semiconductor Memory Adapted to Store a Multi-Valued Data in a Single Memory Cell
Methods for Identifying Non-Volatile Memory Elements with Poor Subthreshold Slope or Weak Transconductance
Behavior Based Programming of Non-Volatile Memory
Non-Volatile Semiconductor Memory Device, Electronic Card Using the Same and Electronic Apparatus
Operating Techniques for Reducing Effects of Coupling Between Storage Elements of a Non-Volatile Memory Operated in Multiple Data States
Non-Volatile Semiconductor Memory with Large Erase Blocks Storing Cycle Counts
Non-Volatile Semiconductor Memory with Large Erase Blocks Storing Cycle Counts
Nonvolatile Semiconductor Memory Adapted to Store a Multi-Valued Data in a Single Memory Cell
Operating Techniques for Reducing Effects of Coupling Between Storage Elements of a Non-Volatile Memory Operated in Multiple Data States
Non-Volatile Semiconductor Memory Device, Electronic Card Using the Same and Electronic Apparatus
Memory system with in stream data encryption / decryption
Application:
11/314,032 →
Publication:
US 2007/0180539
Secure yet flexible system architecture for secure devices with flash mass storage memory
Application:
11/317,339 →
Publication:
US 2007/0061597
Fabrication of Semiconductor Device for Flash Memory with Increased Select Gate Width
Nonvolatile Semiconductor Memory Device Having Protection Function for Each Memory Block
Methods for Identifying Non-Volatile Memory Elements with Poor Subthreshold Slope or Weak Transconductance
Nonvolatile semiconductor memory device which uses some memory blocks in multilevel memory as binary memory blocks
Application:
11/391,299 →
Publication:
US 2006/0171210
Non-Volatile Semiconductor Memory Adapted to Store a Multi-Valued Data in a Single Memory Cell
Non-Volatile Semiconductor Memory with Large Erase Blocks Storing Cycle Counts
Behavior Based Programming of Non-Volatile Memory
Non-Volatile Semiconductor Memory Device Adapted to Store a Multi-Valued Data in a Single Memory Cell
Wear Leveling Techniques for Flash Eeprom Systems
Application:
12/038,666 →
Publication:
US 2008/0162798
Nonvolatile Semiconductor Memory Device Having Protection Function for Each Memory Block
Non-Volatile Semiconductor Memory Device Adapted to Store a Multi-Valued Data in a Single Memory Cell
Non-Volatile Semiconductor Memory Device Adapted to Store a Multi-Valued Data in a Single Memory Cell
Nonvolatile Semiconductor Memory Device Having Protection Function for Each Memory Block
Non-Volatile Semiconductor Memory Device Adapted to Store a Multi-Valued Data in a Single Memory Cell
Nonvolatile Semiconductor Memory Device Having Protection Function for Each Memory Block
Non-Volatile Semiconductor Memory Device Adapted to Store a Multi-Valued Data in a Single Memory Cell
Resistance Change Memory
Non-Volatile Semiconductor Memory Device Adapted to Store a Multi-Valued Data in a Single Memory Cell
Temperature sensor with Successive AD conversion with selective comparisons
Semiconductor Device
Application:
14/200,819 →
Publication:
US 2015/0021790
Non-Volatile Semiconductor Memory Adapted to Store a Multi-Valued Data in a Single Memory Cell
Semiconductor Device
Application:
14/638,817 →
Publication:
US 2015/0179563
Non-Volatile Semiconductor Memory Device Adapted to Store a Multi-Valued Data in a Single Memory Cell
Memory system with versatile content control
Application:
60/638,804 →
Memory system with in stream data encryption/decryption
Application:
60/639,442 →
Secure memory card with life cycle phases
Application:
60/651,128 →
Secure yet flexible system architecture for secure devices with flash mass storage memory
Application:
60/717,164 →
Resistance Change Memory
Application:
61/822,009 →
Temperature Sensor
Application:
61/876,539 →
Related Assignments
(13)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest
Apr 19, 2018
From: TANAKA, TOMOHARU; CHEN, JIAN
To: KABUSHIKI KAISHA TOSHIBA; SANDISK CORPORATION
Reel/Frame 045592/0624 →
Assignment of Assignor's Interest
May 18, 2018
From: KABUSHIKI KAISHA TOSHIBA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 045842/0293 →
Assignment of Assignor's Interest
May 23, 2018
From: KABUSHIKI KAISHA TOSHIBA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 045879/0335 →
Assignment of Assignor's Interest
Jun 12, 2018
From: TANAKA, TOMOHARU
To: KABUSHIKI KAISHA TOSHIBA
Reel/Frame 046057/0038 →
Change of Name
Sep 7, 2021
From: TOSHIBA MEMORY CORPORATION
To: KIOXIA CORPORATION
Reel/Frame 057426/0836 →
Merger and Change of Name
Sep 7, 2021
From: TOSHIBA MEMORY CORPORATION; K.K. PANGEA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 057426/0778 →
Merger and Change of Name
Sep 29, 2021
From: KABUSHIKI KAISHA PANGEA (FORMERLY KNOWN AS TOSHIBA MEMORY CORPORATION); TOSHIBA MEMORY CORPORATION
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 057669/0821 →
Change of Name
Sep 30, 2021
From: TOSHIBA MEMORY CORPORATION
To: KIOXIA CORPORATION
Reel/Frame 057675/0492 →
Change of Name
Jan 20, 2022
From: TOSHIBA MEMORY CORPORATION
To: KIOXIA CORPORATION
Reel/Frame 058785/0197 →
Merger and Change of Name
Jan 20, 2022
From: TOSHIBA MEMORY CORPORATION; K.K. PANGEA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 058785/0124 →
Assignment of Assignor's Interest
Dec 31, 2024
From: SANDISK TECHNOLOGIES LLC
To: SANDISK TECHNOLOGIES, INC.
Reel/Frame 069796/0423 →
Security Agreement
Apr 25, 2025
From: SANDISK TECHNOLOGIES, INC.
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 071050/0001 →
Partial Release of Security Interests
Apr 25, 2025
From: JPMORGAN CHASE BANK, N.A., AS AGENT
To: SANDISK TECHNOLOGIES, INC.
Reel/Frame 071382/0001 →