Patent Assignment
Reel/Frame 057426/0778
Merger and Change of Name
Recorded: 2021-09-07
Pages: 49
Assignee
TOSHIBA MEMORY CORPORATION
1-1, MARUNOUCHI 1-CHOME, CHIYODA-KU, TOKYO, JAPAN
Covered Properties
(31)
Semiconductor Integrated Circuit Adapted to Output Pass/Fail Results of Internal Operations
High-Voltage Transistor Having Shielding Gate
Card and Host Apparatus
Storage Device including Flash Memory and Capable of Predicting Storage Device Performance Based on Performance Parameters
Patent:
50,067 →
Application:
16/545,549 →
Card and Host Device
Patent:
48,772 →
Application:
16/449,605 →
Memory System and Control Method Thereof
Semiconductor Memory Device Capable of Shortening Erase Time
Three Dimensional Stacked Nonvolatile Semiconductor Memory in Which the Channel Potential of a Memory Cell in a Non-Selected Nand Cell Unit Is Increased
Three-Dimensionally Stacked Nonvolatile Semiconductor Memory
Patent:
49,113 →
Application:
16/738,033 →
Memory Device and Controlling Method of the Same
Patent:
48,983 →
Application:
15/464,095 →
Nonvolatile Semiconductor Memory Including a Read Operation
Semiconductor Device Including Three Voltage Generator Circuits and Two Transistors Configured to Short-Circuit Respective Different Combinations of the Voltage Generator Circuits
Patent:
49,175 →
Application:
16/041,428 →
Nonvolatile Semiconductor Memory Device Which Performs Improved Erase Operation
Memory System Having High Data Transfer Efficiency and Host Controller
Patent:
48,736 →
Application:
16/559,092 →
Memory System in which Extended Function Can Easily Be Set
Patent:
48,997 →
Application:
16/452,252 →
Memory System Allowing Host to Easily Transmit and Receive Data
Memory Device and Controlling Method of the Same
Patent:
49,921 →
Application:
17/377,952 →
High-Voltage Transistor Having Shielding Gate
Application:
17/460,454 →
Publication:
US US20210391344A1
Semiconductor Memory Device
Ferroelectric Memory Device
Nonvolatile Semiconductor Memory Device Having Protection Function for Each Memory Block
Nonvolatile Semiconductor Memory Device Having Protection Function for Each Memory Block
Nonvolatile Semiconductor Memory Device Having Protection Function for Each Memory Block
Nonvolatile Semiconductor Memory Device Having Protection Function for Each Memory Block
Pattern Inspection Apparatus
Pattern Inspection Method
Faceted Epi Shape and Half-Wrap Around Silicide in S/D Merged Finfet
Memory Architecture with Memory Cell Groups
Thermal Sensing Circuits Using Bandgap Voltage Reference Generators Without Trimming Circuitry
Thermal Sensing Circuit Using Bandgap Voltage Reference Generators Without Trimming Circuitry
Systems and Methods for Thermal Sensing
Related Assignments
(9)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest
Feb 26, 2009
From: FUJITSU LIMITED
To: FUJITSU MICROELECTRONICS LIMITED
Reel/Frame 022309/0544 →
Assignment of Assignor's Interest
Jan 15, 2010
From: INFINEON TECHNOLOGIES AG
To: QIMONDA AG
Reel/Frame 023796/0001 →
Change of Name
Nov 8, 2010
From: FUJITSU MICROELECTRONICS LIMITED
To: FUJITSU SEMICONDUCTOR LIMITED
Reel/Frame 025330/0560 →
Assignment of Assignor's Interest
May 8, 2015
From: QIMONDA AG
To: INFINEON TECHNOLOGIES AG
Reel/Frame 035623/0001 →
Change of Address
Oct 5, 2016
From: FUJITSU SEMICONDUCTOR LIMITED
To: FUJITSU SEMICONDUCTOR LIMITED
Reel/Frame 040225/0916 →
Assignment of Assignor's Interest
Jul 26, 2017
From: KABUSHIKI KAISHA TOSHIBA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 043328/0388 →
Assignment of Assignor's Interest
Dec 13, 2017
From: KABUSHIKI KAISHA TOSHIBA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 044384/0070 →
Assignment of Assignor's Interest
Feb 8, 2018
From: KABUSHIKI KAISHA TOSHIBA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 044867/0879 →
Change of Name
Sep 7, 2021
From: TOSHIBA MEMORY CORPORATION
To: KIOXIA CORPORATION
Reel/Frame 057426/0836 →