IP Library Granted Patent US 7,230,680
Granted Patent B2
US 7,230,680 · App. 10/739,275 · Granted Jun 12, 2007

Wafer flatness evaluation method, wafer flatness evaluation apparatus carrying out the evaluation method, wafer manufacturing method using the evaluation method, wafer quality assurance method using the evaluation method, semiconductor device manufacturing method using the evaluation method and semiconductor device manufacturing method using a wafer evaluated by the evaluation method

Assignees: Kabushiki Kaisha Toshiba; Shin-Etsu Handotai Co., Ltd.; Nikon Corporation
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Quick Facts
Patent No.
US 7,230,680
App. No.
10/739,275
Granted
Jun 12, 2007
Kind
B2
Abstract

There is disclosed a wafer flatness evaluation method includes measuring front and rear surface shapes of a wafer. The wafer front surface measured is divided into sites. Then, a flatness calculating method is selected according to a position of the site to be evaluated and flatness in the wafer surface is acquired.

Claims (60)

1. A wafer flatness evaluation method comprising:

measuring front and rear surface shapes of a wafer; and

dividing the front surface of the wafer into sites, selecting a flatness calculating method according to a position of the site to be evaluated and acquiring flatness in the wafer surface, the flatness calculating method being selected according to whether the site to be evaluated is a partial site or a full site,

wherein a first calculating method is selected for calculating flatness based on thickness distribution obtained when it is assumed that the wafer is completely chucked on an ideal plane by use of measurement values of the front and rear surface shapes of the wafer, while the site to be evaluated is the full site, and a second calculating method is selected for calculating flatness based on front surface shape distribution of the wafer obtained when the wafer is mounted on a wafer holder, while the site to be evaluated is the partial site.

2. The wafer flatness evaluation method according to claim 1 , wherein the front surface shape distribution of the wafer obtained when the wafer is mounted on the wafer holder is acquired by actually mounting the wafer on a wafer holder and taking a measurement in an actually mounting state.

3. The wafer flatness evaluation method according to claim 1 , wherein the front surface shape distribution of the wafer obtained when the wafer is mounted on the wafer holder is acquired by imaginarily mounting the wafer on a wafer holder and doing a chucking simulation using a chucking characteristic of the wafer holder.

4. A wafer flatness evaluation method comprising:

measuring front and rear surface shapes of a wafer; and

dividing the front surface of the wafer into sites, selecting a flatness calculating method according to a position of the site to be evaluated and acquiring flatness in the wafer surface, one of a distance between the site to be evaluated and the center of the wafer and a distance between the site to be evaluated and an outermost peripheral line for flatness evaluation set near an edge portion of the wafer being derived and the flatness calculating method being selected according to the thus derived distance,

wherein a first calculating method is selected for calculating flatness based on front surface shape distribution of the wafer obtained when the wafer is mounted on a wafer holder, while the site to be evaluated is mounted on the wafer holder, and a second calculating method is selected for calculating flatness based on thickness distribution obtained when it is assumed that the wafer is completely chucked on an ideal plane by use of measurement values of the front and rear surface shapes of the wafer, while the site to be evaluated is not mounted on the wafer holder.

5. The wafer flatness evaluation method according to claim 4 , wherein the front surface shape distribution of the wafer obtained when the wafer is mounted on the wafer holder is acquired by actually mounting the wafer on a wafer holder and taking a measurement in an actually mounting state.

6. The wafer flatness evaluation method according to claim 4 , wherein the front surface shape distribution of the wafer obtained when the wafer is mounted on the wafer holder is acquired by imaginarily mounting the wafer on a wafer holder and doing a chucking simulation using a chucking characteristic of the wafer holder.

7. A wafer flatness evaluation method comprising:

measuring front and rear surface shapes of a wafer; and

dividing the front surface of the wafer into sites, selecting a flatness calculating method according to a shape of the wafer rear surface in the site to be evaluated and acquiring flatness in the wafer surface,

wherein a first calculating method is selected for calculating flatness based on thickness distribution obtained when it is assumed that the wafer is completely chucked on an ideal plane by use of measurement values of the front and rear surface shapes of the wafer, while the site to be evaluated is completely chucked on a stage of a wafer holder, and a second calculating method is selected for calculating flatness based on front surface shape distribution of the wafer obtained when the wafer is mounted on a wafer holder, while the site to be evaluated is not completely chucked on a stage of a wafer holder.

8. The wafer flatness evaluation method according to claim 7 , wherein the front surface shape distribution of the wafer obtained when the wafer is mounted on the wafer holder is acquired by actually mounting the wafer on a wafer holder and taking a measurement in an actually mounting state.

9. The wafer flatness evaluation method according to claim 7 , wherein the front surface shape distribution of the wafer obtained when the wafer is mounted on the wafer holder is acquired by imaginarily mounting the wafer on a wafer holder and doing a chucking simulation using a chucking characteristic of the wafer holder.

10. A wafer flatness evaluation method comprising:

measuring front and rear surface shapes of a wafer; and

dividing the front surface of the wafer into sites, selecting a flatness calculating method according to a stage shape of a wafer holder lying under the site to be evaluated and acquiring flatness in the wafer surface,

wherein a first calculating method is selected for calculating flatness based on thickness distribution obtained when it is assumed that the wafer is completely chucked on an ideal plane by use of measurement values of the front and rear surface shapes of the wafer, while the site to be evaluated is not mounted on a peculiar portion of the wafer holder, and a second calculating method is selected for calculating flatness based on front surface shape distribution of the wafer obtained when the wafer is mounted on a wafer holder, while the site to be evaluated is mounted on the peculiar portion of the wafer holder.

11. The wafer flatness evaluation method according to claim 10 , wherein the front surface shape distribution of the wafer obtained when the wafer is mounted on the wafer holder is acquired by actually mounting the wafer on a wafer holder and taking a measurement in an actually mounting state.

12. The wafer flatness evaluation method according to claim 10 , wherein the front surface shape distribution of the wafer obtained when the wafer is mounted on the wafer holder is acquired by imaginarily mounting the wafer on a wafer holder and doing a chucking simulation using a chucking characteristic of the wafer holder.

13. A wafer flatness evaluation apparatus comprising:

a measuring section which measures front and rear surface shapes of a wafer;

an acquiring section which divides the front surface of the wafer into sites, selects a flatness calculating method according to a position of the site to be evaluated and acquires flatness in the wafer surface; and

a selector which selects a first calculating method for calculating flatness based on thickness distribution obtained when it is assumed that the wafer is completely chucked on an ideal plane by use of measurement values of the front and rear surface shapes of the wafer, while the site to be evaluated is the full site, and selects a second calculating method for calculating flatness based on front surface shape distribution of the wafer obtained when the wafer is mounted on a wafer holder, while the site to be evaluated is the partial site.

14. A wafer flatness evaluation apparatus comprising:

a measuring section which measures front and rear surface shapes of a wafer;

an acquiring section which divides the front surface of the wafer into sites, selects a flatness calculating method according to the wafer rear surface shape in the site to be evaluated and acquires flatness in the wafer surface; and

a selector which selects a first calculating method for calculating flatness based on thickness distribution obtained when it is assumed that the wafer is completely chucked on an ideal plane by use of measurement values of the front and rear surface shapes of the wafer, while the site to be evaluated is completely chucked on a stage of a wafer holder, and selects a second calculating method for calculating flatness based on front surface shape distribution of the wafer obtained when the wafer is mounted on a wafer holder, while the site to be evaluated is not completely chucked on a stage of a wafer holder.

15. A wafer flatness evaluation apparatus comprising:

a measuring section which measures front and rear surface shapes of a wafer;

an acquiring section which divides the front surface of the wafer into sites, selects a flatness calculating method according to a stage shape of a wafer holder lying under the site to be evaluated and acquires flatness in the wafer surface; and

a selector which selects a first calculating method for calculating flatness based on thickness distribution obtained when it is assumed that the wafer is completely chucked on an ideal plane by use of measurement values of the front and rear surface shapes of the wafer, while the site to be evaluated is not mounted on a peculiar portion of the wafer holder, and selects a second calculating method for calculating flatness based on front surface shape distribution of the wafer obtained when the wafer is mounted on a wafer holder, while the site to be evaluated is mounted on the peculiar portion of the wafer holder.

16. A wafer quality assurance method comprising:

measuring front and rear surface shapes of a wafer;

dividing the front surface of the wafer into sites;

selecting a first calculating method for calculating flatness based on thickness distribution obtained when it is assumed that the wafer is completely chucked on an ideal plane by use of measurement values of the front and rear surface shapes of the wafer, while the site to be evaluated is the full site, and selecting a second calculating method for calculating flatness based on front surface shape distribution of the wafer obtained when the wafer is mounted on a wafer holder, while the site to be evaluated is the partial site; and

assuring the flatness in the wafer surface for each of the plural types of wafer holders.

17. A wafer quality assurance method comprising:

measuring front and rear surface shapes of a wafer;

dividing the front surface of the wafer into sites;

selecting a first calculating method for calculating flatness based on thickness distribution obtained when it is assumed that the wafer is completely chucked on an ideal plane by use of measurement values of the front and rear surface shares of the wafer, while the site to be evaluated is completely chucked on a stage of a wafer holder, and selecting a second calculating method for calculating flatness based on front surface shape distribution of the wafer obtained when the wafer is mounted on a wafer holder, while the site to be evaluated is not completely chucked on a stage of a wafer holder; and

assuring the flatness in the wafer surface for each of the plural types of wafer holders.

18. A wafer quality assurance method comprising:

measuring front and rear surface shapes of a wafer;

dividing the front surface of the wafer into sites;

selecting a first calculating method for calculating flatness based on thickness distribution obtained when it is assumed that the wafer is completely chucked on an ideal plane by use of measurement values of the front and rear surface shapes of the wafer, while the site to be evaluated is not mounted on a peculiar portion of the wafer holder, and selecting a second calculating method for calculating flatness based on front surface shape distribution of the wafer obtained when the wafer is mounted on a wafer holder, while the site to be evaluated is mounted on the peculiar portion of the wafer holder; and

assuring the flatness in the wafer surface for each of the plural types of wafer holders.

19. A wafer flatness evaluation apparatus comprising:

a measuring section which measures front and rear surface shapes of a wafer;

an acquiring section which divides the front surface of the wafer into sites, selects a flatness calculating method according to a position of the site to be evaluated and acquires flatness in the wafer surface and

a selector which selects a first calculating method for calculating flatness based on front surface shape distribution of the wafer obtained when the wafer is mounted on a wafer holder, while the site to be evaluated is mounted on the wafer holder, and selects a second calculating method for calculating flatness based on thickness distribution obtained when it is assumed that the wafer is completely chucked on an ideal plane by use of measurement values of the front and rear surface shapes of the wafer, while the site to be evaluated is not mounted on the wafer holder.

20. A wafer quality assurance method comprising:

measuring front and rear surface shapes of a wafer;

dividing the front surface of the wafer into sites;

selecting a first calculating method for calculating flatness based on front surface shape distribution of the wafer obtained when the wafer is mounted on a wafer holder, while the site to be evaluated is mounted on the wafer holder, and selecting a second calculating method for calculating flatness based on thickness distribution obtained when it is assumed that the wafer is completely chucked on an ideal plane by use of measurement values of the front and rear surface shapes of the wafer, while the site to be evaluated is not mounted on the wafer holder; and

assuring the flatness in the wafer surface for each of the plural types of wafer holders.

Assignments (4)
MERGER AND CHANGE OF NAME Recorded Jan 20, 2022
From: TOSHIBA MEMORY CORPORATION; K.K. PANGEA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 058785/0124 →
CHANGE OF NAME Recorded Jan 20, 2022
From: TOSHIBA MEMORY CORPORATION
To: KIOXIA CORPORATION
Reel/Frame 058785/0197 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 13, 2017
From: KABUSHIKI KAISHA TOSHIBA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 044384/0054 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 1, 2004
From: FUJISAWA, TADAHITO; INOUE, SOICHI; KOBAYASHI, MAKOTO; ICHIKAWA, MASASHI; HAGIWARA, TSUNEYUKI; KODAMA, KENICHI
To: KABUSHIKI KAISHA TOSHIBA; SHIN-ETSU HANDOTAI CO., LTD.; NIKON CORPORATION
Reel/Frame 015401/0995 →
Priority Claims (1)
JP 2002-370502 · Dec 20, 2002 · national
Continuity (1)
Related Publication 20040185662A1 · Sep 23, 2004