Semiconductor memory device

1. A semiconductor memory device comprising:

a memory string including a plurality of series-connected memory cells, the memory cells including a first memory cell, each of the memory cells being configured to store data by one of a first state, a second state, . . . n state (n is a natural number);

a bit line connected to one end of the first memory cell;

a source line connected to another end of the first memory cell;

a plurality of word lines connected to gates of the memory cells, respectively, the word lines including a first word line connected to the gate of the first memory cell;

a data input/output terminal; and

a data storage circuit electrically connected to the bit line and including a plurality of latch circuits configured to hold a write data,

wherein

when data is written to the first memory cell to change a state thereof from the first state to one of the first state, the second state, . . . the n state depending on a first data after the first data is inputted from the data input/output terminal to the latch circuits of the data storage circuit in a first write operation,

second data generated by the first data is inputted from the data input/output terminal to the latch circuits of the data storage circuit in a second write operation, and

data is read from the first memory cell written by the first write operation, the first data is restored by the read data and the second data, and the second write operation is executed to the first memory cell once again by the restored first data.

2. The semiconductor memory device according to claim 1 , wherein

the second data distinguishes adjacent states among the first state, the second state, . . . the n state.

3. The semiconductor memory device according to claim 1 , wherein

after the first write operation, a write operation is executed to a second memory cell adjacent to the first memory cell, and then the second write operation is executed to the first memory cell.

4. The semiconductor memory device according to claim 1 , wherein

the second write operation is executed after the first write operation.

5. The semiconductor memory device according to claim 3 , wherein

a write operation is executed to each of the first memory cell and the second memory cell.

6. The semiconductor memory device according to claim 1 , wherein

the first state is an E state, the second data is an A state, a third state is a B state, and a fourth state is a C state.

7. The semiconductor memory device according to claim 1 , wherein,

when read voltage levels used for write verify of the memory cell in the first write operation are A, B, and C (A<B<C), read voltage levels used for reading of data stored in the memory cell in the second write operation is E (A<E<B).

8. The semiconductor memory device according to claim 1 , wherein,

when read voltage levels used for write verify of the memory cell in the first write operation are A, B, and C (A<B<C), read voltage levels used for reading of data stored in the memory cell in the second write operation is F (B<F<C).

9. The semiconductor memory device according to claim 1 , wherein

a part of the latch circuits temporarily stores bits, writing of at least data of 1 bit is completed during the first write operation, and data to be written in a subsequent write operation is temporarily held in a remaining part of the latch circuits.

10. The semiconductor memory device according to claim 1 , wherein

a part of the latch circuits temporarily stores bits, and data to be written in a subsequent write operation is temporarily held in a remaining part of the latch circuits after an end of the first write operation or during the second write operation.

11. The semiconductor memory device according to claim 1 , wherein,

after an end of the second write operation, the second write operation is again repeatedly executed.

12. The semiconductor memory device according to claim 1 , further comprising

another memory string including a second memory cell, a gate of the second memory cell being connected to the first word line,

wherein

writing is executed by the first write operation in the order of the first memory cell and the second memory cell, and then writing is executed by the second write operation in the order of the first memory cell and the second memory cell.

13. The semiconductor memory device according to claim 1 , wherein

the memory string further includes a third memory cell, the another memory string further includes a fourth memory cell, the word lines further include a second word line connected to the gate of the third memory cell and a gate of the fourth memory cell, writing is executed by the first write operation in the order of the first memory cell and the second memory cell and the third memory cell and the fourth memory cell, and then writing is executed by the second write operation in the order of the first memory cell, the second memory cell, the third memory cell, and the fourth memory cell.

14. The semiconductor memory device according to claim 1 , wherein

the first write operation and second write operation are executed as one program sequence.

15. The semiconductor memory device according to claim 1 , wherein

a control circuit executes a weak erase operation between the first write operation and the second write operation, and the control circuit applies a weak erase voltage to the first memory cell in the weak erase operation, the weak erase voltage has a reverse voltage for a write voltage applied to the first memory cell in the first and second write operations.

16. A semiconductor memory device comprising:

a first memory string including a plurality of series-connected first memory cells, each of the first memory cells being configured to store data by one of a first state, a second state, . . . n state (n is a natural number), the first memory string at least partially extending in a vertical direction;

a second memory string including a plurality of series-connected second memory cells, each of the second memory cells being configured to store data by one of the first state, the second state, . . . the n state, the second memory string at least partially extending in the vertical direction;

a first bit line connected to one end of the first memory string;

a second bit line connected to one end of the second memory string;

a source line connected to another end of the first memory string and another end of the second memory string;

a plurality of word lines connected to gates of the first memory cells and gates of the second memory cells, respectively;

a first data storage circuit electrically connected to the first bit line and configured to hold data to be written into one of the first memory cells; and

a second data storage circuit electrically connected to the second bit line and configured to hold data to be written into one of the second memory cells,

wherein

when data are written to the one of the first memory cells and to the one of the second memory cells to change respective states from the first state to one of the first state, the second state, . . . the n state after first data is input to the first data storage circuit and the second data storage circuit in a first write operation,

second data generated by the first data is inputted to the first data storage circuit and the second data storage circuit in a second write operation, and

data are read from the one of the first memory cells and the one of the second memory cells written by the first write operation, the first data is restored by the read data and the second data, and the second write operation is executed to the one of the first memory cells and the one of the second memory cells using the restored first data.

17. The semiconductor memory device according to claim 16 , wherein

the gate one of the first memory cells and the gate one of the second memory cells are connected to one of the word lines.