Semiconductor memory system including first and second semiconductor memory chips and a common signal line
A communication line is connected to first and second chips, and held at a first signal level. A monitor circuit changes a signal level of the communication line from the first signal to a second signal level while one of the first and second chips uses a current larger than a reference current. When the signal level of the communication line is the second signal level, the other of the first and second chips is controlled to a wait state that does not transfer to an operating state of using a current larger than the reference current.
1. A semiconductor memory system comprising:
a first semiconductor memory chip;
a second semiconductor memory chip;
a controller chip;
a first common signal line connected to the first semiconductor memory chip, the second semiconductor memory chip, and the controller chip; and
a second common signal line connected to the first semiconductor memory chip, the second semiconductor memory chip, and the controller chip,
wherein the first semiconductor memory chip and the second semiconductor memory chip perform operations specified by a signal on the second common signal line under timings instructed by a signal on the first common signal line.
2. The system according to claim 1 , wherein
the controller chip includes a signal generator, the signal generator being configured to generate the signal.
3. The system according to claim 1 , wherein
when one of the first semiconductor memory chip and the second semiconductor memory chip consumes a current larger than a reference current, the other one of the first semiconductor memory chip and the second semiconductor memory chip is set into a waiting state.
4. The system according to claim 3 , wherein
when a peak of the current of the one of the first semiconductor chip and the second semiconductor memory chip is past, the other one of the first semiconductor chip and the second semiconductor memory chip is returned from the waiting state.
5. The system according to claim 1 , wherein
the signal on the first common signal line includes a clock signal.
6. The system according to claim 1 , wherein
the controller chip includes a clock signal generator configured to supply a clock signal to the first common signal line, and a control signal generator configured to supply a control signal to the second common signal line,
wherein
each of the first semiconductor memory chip and the second semiconductor memory chip operates under timings corresponding to the clock signal, and
when one of the first semiconductor memory chip and the second semiconductor memory chip consumes a current larger than a reference current, the control signal generator of the controller chip controls a signal level of the control signal such that the other one of the first semiconductor memory chip and the second semiconductor memory chip is set into a waiting state according to the control signal.
7. A method for controlling a semiconductor memory system,
the system comprising:
a first semiconductor memory chip;
a second semiconductor memory chip;
a controller chip;
a first common signal line connected to the first semiconductor memory chip, the second semiconductor memory chip and the controller chip; and
a second common signal line connected to the first semiconductor memory chip, the second semiconductor memory chip, and the controller chip,
the method comprising:
causing the first semiconductor memory chip and the second semiconductor memory chip to perform operations specified by a signal on the second common signal line under timings instructed by a clock signal on the first common signal line.
8. The method according to claim 7 , wherein
the system further comprises:
the controller chip includes a clock signal generator, and
the method further comprises:
generating the clock signal by the clock signal generator of the controller.
9. The method according to claim 7 , further comprising:
when one of the first semiconductor memory chip and the second semiconductor memory chip consumes a current larger than a reference current, causing the other one of the first semiconductor memory chip and the second semiconductor memory chip to be set into a waiting state.
10. The method according to claim 9 , wherein
when a peak of the current of the one of the first semiconductor chip and the second semiconductor memory chip is past, causing the other one of the first semiconductor chip and the second semiconductor memory chip to return from the waiting state.
11. The method according to claim 7 , wherein
the system further comprises:
the controller chip includes a clock signal generator configured to supply the clock signal to the first common signal line, and a control signal generator configured to supply a control signal to the second common signal line,
the method further comprises:
operating each of the first semiconductor memory chip and the second semiconductor memory chip under timings corresponding to the clock signal, and
when one of the first semiconductor memory chip and the second semiconductor memory chip consumes a current larger than a reference current, causing the control signal generator of the controller chip to control a signal level of the control signal such that the other one of the first semiconductor memory chip and the second semiconductor memory chip is set into a waiting state according to the control signal.
12. The system according to claim 1 , further comprising:
a third common signal line connected to the first semiconductor memory chip and the controller chip; and
a fourth common signal line connected to the second semiconductor memory chip and the controller chip,
wherein the first semiconductor memory chip is activated or deactivated in response to a signal on the third common signal line, and the second semiconductor memory chip is activated or deactivated in response to a signal on the fourth common signal line.
13. The system according to claim 12 , wherein
the controller chip includes an enable signal generator configured to supply a chip enable signal to each of the first semiconductor memory chip and the second semiconductor memory chip.