Memory system including the semiconductor memory and a controller

1. A method of controlling a semiconductor memory including a plurality of first blocks, a second block, and a sense amplifier, each of the plurality of first blocks including a memory cell capable of storing data of one bit, the second block including a memory cell capable of storing data of two or more bits, the sense amplifier including a first latch circuit and a second latch circuit, the method comprising:

receiving a first write command, the first write command specifying a set of first data of one page;

receiving a second write command, the second write command specifying a set of second data of one page;

storing the first data in the first latch circuit, and storing the second data in the second latch circuit;

writing the first data into a first one of the first blocks in page units, and writing the second data into a second one of the first blocks in page units;

in response to a third write command, writing data of at least two pages into the second block, using the first data stored in the first latch circuit and the second data stored in the second latch circuit,

after receiving the third write command, receiving a first read command, a second read command, and a fourth write command;

reading the first data from the first one of the first blocks to the first latch circuit in response to the first read command;

reading the second data from the second one of the first blocks to the second latch circuit in response to the second read command; and

overwriting data of the at least two pages into the second block written by the writing into the second block in response to the fourth write command, using the first data and the second data that are read to the first latch circuit and the second latch circuit, respectively, wherein

the fourth write command specifies a word line selected in response to the third write command,

a verify voltage that is used when the data of at least two pages is written in response to the fourth write command is higher than a verify voltage that is used when the data of at least two pages is written in response to the third write command, and

the first data and the second data include a first bit and a second bit of the data of two or more bits to be written in the memory cell of the second block.

2. The method according to claim 1 , wherein

the sense amplifier further includes a third latch circuit,

the storing the first data in the first latch circuit includes storing the first data of the received first write command in the third circuit and transferring the first data stored in the third circuit to the first latch circuit, and

the storing the second data in the second latch circuit includes storing the second data of the received second write command in the third latch circuit after the first data is transferred from the third latch circuit to the first latch circuit, and transferring the second data stored in the third circuit to the second latch circuit.

3. The method according to claim 1 , wherein

the sense amplifier further includes a third latch circuit,

the storing the first data in the first latch circuit includes storing the first data of the received first write command in the third latch circuit, and transferring the first data stored in the third circuit to the first latch circuit,

the storing the second data in the second latch circuit includes storing the second data of the received second write command in the third latch circuit after the first data is transferred from the third latch circuit to the first latch circuit, and transferring the second data stored in the third circuit to the second latch circuit,

the reading the first data from the first one of the first blocks to the first latch circuit in response to the first read command includes storing to the first latch circuit without passing through the third latch circuit, and

the reading the second data from the second one of the first blocks to the second latch circuit in response to the second read command includes storing to the second latch circuit without passing through the third latch circuit.

4. The method according to claim 3 , wherein

the first latch circuit of the sense amplifier is associated with the first bit, and the second latch circuit of the sense amplifier is associated with the second bit.

5. The method according to claim 1 , further comprising, if data writing to the first one and/or the second one of the first blocks in response to the first write command and/or the second write command fails, not receiving the third write command.

6. The method according to claim 1 , further comprising:

if the data writing to the second block in response to the third write command fails, receiving again the third write command specifying a different address of the second block; and

if the data writing to the first one and/or the second one of the first blocks in response to the first write command and/or the second write command fails, receiving the first write command and/or the second write command specifying a different address in the first one and/or the second one of the first blocks.

7. The method according to claim 1 , further comprising:

if the data writing to the second block in response to the third write command fails, receiving again the third write command specifying a different address of the second block and the fourth write command specifying the different address for a write address for writing data; and

if the data writing to the first one and/or the second one of the first blocks in response to the first write command fails, receiving again the first write command specifying a different address of the first one and/or the second one of the first blocks and the first read command specifying the different address for a read address for reading data.

8. The method according to claim 1 , wherein the first one of the first blocks is a same as the second one of the first blocks.

9. The method according to claim 1 , wherein the first data and the second data are written into a same one of the first blocks.

10. The method according to claim 1 , wherein the first one of the first blocks is different from the second one of the first blocks.

11. The method according to claim 1 , wherein

a plurality of memory cells are serially connected to form a serial connection in the first blocks and the second block,

one of the memory cells at one end of the serial connection is connected to a source line, and one of the memory cells at the other end of the serial connection is connected to a bit line,

the bit line is connected to the sense amplifier, and

the receiving the first read command, the second read command, and the fourth write command for a first memory cell is performed after the receiving the first write command, the second write command, and the third write command for a second memory cell that is adjacent to the first memory cell on a side of the bit line.