Data reading and writing processing from and to a semiconductor memory and a memory of a host device by using first and second interface circuits
A device includes a host including a main memory, and semiconductor memory including a nonvolatile semiconductor memory, memory unit, and controller. The nonvolatile semiconductor memory stores first address information. The memory unit stores second address information as part of the first address information. The controller accesses the nonvolatile semiconductor memory based on the second address information. Third address information is stored in the main memory, and is part or all of the first address information. The controller uses the third address information when accessing the nonvolatile semiconductor memory if address information to be referred is not stored in the second address information.
1. A memory system comprising:
a first interface circuit configured to communicate with a host device, then host device including a first semiconductor memory;
a nonvolatile second semiconductor memory including a plurality of blocks including a first block, a second block, and a third block, each of the blocks being a unit of an erase operation of the nonvolatile second semiconductor memory;
a second interface circuit configured to connect to the nonvolatile second semiconductor memory; and
a controller circuit configured to, in a case that the memory system is connected to the host device via the first interface circuit;
read a valid first data from the first block via the second interface circuit;
write the read first data into an area of the first semiconductor memory of the host device via the first interface circuit, the area having been designated by the host device for storing data from the memory system;
read a valid second data from the second block via the second interface circuit;
write the read second data into the area of the first semiconductor memory via the first interface circuit;
read the first data and the second data from the area of the first semiconductor memory via the first interface circuit; and
write the read first data and the read second data into the third block via the second interface circuit.
2. The memory system according to claim 1 , wherein the controller circuit is configured to execute a block rearrangement to secure a free block, and the block rearrangement includes at least one of: a compaction process, a garbage collection process, a read-modify-write (RMW) process.
3. The memory system according to claim 1 , wherein the controller circuit is configured to execute a block rearrangement to secure a free block, the block rearrangement including a read-modify-write (RMW) process, and
the controller circuit is configured to integrate the valid first data and the valid second data with write data received from the host device and write the valid first data and the valid second data integrated with the write data into the third block in the RMW process.
4. The memory system according to claim 1 , wherein the controller circuit is configured to execute a block rearrangement to secure a free block when a number of free blocks becomes smaller than a threshold value.
5. The memory system according to claim 1 , wherein the controller circuit is configured to use a work area of the first semiconductor memory when the controller circuit reads the first data and the second data from the area of the first semiconductor memory and writes the read first data and the read second data into the third block.
6. The memory system according to claim 1 , wherein the third block is a free block.
7. A storage system comprising:
a host device including a first semiconductor memory; and
a memory system, including:
a first interface circuit configured to communicate with the host device;
a nonvolatile second semiconductor memory including a plurality of blocks including a first block, a second block, and a third block, each of the blocks being a unit of an erase operation of the nonvolatile second semiconductor memory;
a second interface circuit configured to connect to the nonvolatile second semiconductor memory; and
a controller circuit configured to, in a case that the memory system is connected to the host device via the first interface circuit:
read a valid first data from the first block via the second interface circuit;
write the read first data into an area of the first semiconductor memory, of the host device via the first interface circuit, the area having been designated by the host device for storing data from the memory system;
read a valid second data from the second block via the second interface circuit;
write the read second data into the area of e first semiconductor memory via the first interface circuit;
read the first data and the second data from the area of the first semiconductor memory via the first interface circuit; and
write the read first data and the read second data into the third block via the second interface circuit.
8. The storage system according to claim 7 , wherein the controller circuit is configured to execute a block rearrangement to secure a free block, and the block rearrangement includes at least one of: a compaction process, a garbage collection process, a read-modify-write (RMW) process.
9. The storage system according to claim 7 , wherein the controller circuit is configured to execute a block rearrangement to secure a free block, the block rearrangement including a read-modify-write (RMW) process, and
the controller circuit is configured to integrate the valid first data and the valid second data with write data received from the host device and write the valid first data and the valid second data integrated with the write data into the third block in the RMW process.
10. The storage system according to claim 7 , wherein the controller circuit is configured to execute a block rearrangement to secure a free block when a number of free blocks becomes smaller than a threshold value.
11. The storage system according to claim 7 , wherein the controller circuit is configured to use a work area of the first semiconductor memory when the controller circuit reads the first data and the second data from the area of the first semiconductor memory and writes the read first data and the read second data into the third block.
12. The storage system according to claim 7 , wherein the third block is a free block.
13. The storage system according to claim 7 , wherein the host device further comprises a direct memory access (DMA) controller configured to transfer the first data and the second data stored in the first semiconductor memory to the memory system.
14. A method for a memory system capable of communicating with a host device including a first semiconductor memory; the memory system including a nonvolatile second semiconductor memory including a plurality of blocks including a first block, a second block, and a third block, each of the blocks being a unit of an erase operation of the nonvolatile second semiconductor memory, the method comprising:
executing a process of, in a case that the memory system is connected to the host device via a first interface circuit:
reading a valid first data from the first block via a second interface circuit;
writing the read first data into an area of the first semiconductor memory of the host device via the first interface circuit, the area having been designated by the host device for storing data from the memory system;
reading a valid second data from the second block via the second interface circuit;
writing the read second data into the area of the first semiconductor memory via the first interface circuit;
reading the first data and the second data from the area of the first semiconductor memory via the first interface circuit; and
writing the read first data and the read second data into the third block via the second interface circuit.
15. The method according to claim 14 , further comprising executing a block rearrangement to secure a free block, wherein the block rearrangement includes at least one of a compaction process, a garbage collection process, a read-modify-write (RMW) process.
16. The method according to claim 14 , further comprising:
executing a block rearrangement to secure a free block, the block rearrangement including a read-modify-write (RMW) process; and
integrating the valid first data and the valid second data with write data received from the host device and writing the valid first data and the valid second data integrated with the write data into the third block in the RMW process.
17. The method according to claim 14 , further comprising executing a block rearrangement to secure a free block when a number of free blocks becomes smaller than a threshold value.
18. The method according to claim 14 , further comprising:
using a work area of the first semiconductor memory when reading the first data and the second data from the area of the first semiconductor memory and writing the read first data and the read second data into the third block.
19. The method according to claim 14 , wherein the third block is a free block.