Semiconductor device and method for manufacturing the same
To miniaturize metal columns. A semiconductor device includes a metal column ( 14 ) that extends in a stretching direction; a polymer layer ( 16 ) that surrounds the metal column from a direction crossing the stretching direction; and a guide ( 12 ) that surrounds the polymer layer in the crossing direction so as to be spaced from the metal column with the polymer layer interposed therebetween. A method for manufacturing semiconductor devices includes a step of filling a mixture ( 20 ) containing metal particles ( 22 ) and polymers ( 24 ) in a guide ( 12 ); and a step of subjecting the mixture to a heat treatment so that the polymers agglomerate to the guide to form a polymer layer ( 16 ) that makes contact with the guide and the metal particles agglomerate away from the guide with the polymer layer interposed therebetween to form a metal column ( 14 ) that stretches in a stretching direction of the guide from the metal particles.
1. A semiconductor device comprising:
a metal column that extends in a stretching direction;
a polymer layer that directly contacts the metal column from a direction crossing the stretching direction;
a guide that surrounds the polymer layer in the crossing direction so as to be spaced from the metal column with the polymer layer interposed therebetween;
a first substrate and a second substrate stacked in the stretching direction,
wherein the metal column is a bump that electrically connects the first and second substrates;
a plurality of first electrodes provided on a surface of the first substrate facing the second substrate;
a plurality of second electrodes provided on a surface of the second substrate facing the first substrate,
wherein the metal column connects the plurality of first electrodes and the plurality of second electrodes;
a first circuit provided in the first substrate so as to be electrically connected to the plurality of first electrodes;
a second circuit provided in the second substrate so as to be electrically connected to the plurality of second electrodes;
a detection circuit that detects a second electrode of the plurality of second electrodes to which at least one first electrode of the plurality of first electrodes is connected; and
a switching circuit that switches at least one of connection between the first circuit and the plurality of first electrodes and connection between the second circuit and the plurality of second electrodes on the basis of a detection result of the detection circuit.
2. The semiconductor device according to claim 1 , wherein the guide is provided in at least one of the first and second substrates.
3. The semiconductor device according to claim 1 , wherein an inner portion of the guide is formed of metal.
4. The semiconductor device according to claim 1 , wherein the metal column is a multi-particle member.
5. The semiconductor device according to claim 1 , wherein a material of the metal column has a melting point equal to or higher than a melting point of a material of the polymer layer.
6. A semiconductor device comprising:
a metal column that extends in a stretching direction;
a polymer layer that directly contacts the metal column from a direction crossing the stretching direction; and
a guide that surrounds the polymer layer in the crossing direction so as to be spaced from the metal column with the polymer layer interposed therebetween,
wherein the guide is hydrophilic, and a region of the polymer layer making contact with the guide is hydrophilic.
7. The semiconductor device according to claim 6 , further comprising:
a semiconductor substrate, wherein
the guide is an insulator film formed on an inner surface of a through-hole that passes through the semiconductor substrate,
the polymer layer is filled in the through-hole, and
the metal column is a penetration electrode that passes through the polymer layer.
8. The semiconductor device according to claim 6 , wherein
the metal column stretches in a horizontal direction,
the polymer layer is provided so as to sandwich the metal column from a direction crossing the stretching direction, and
a pair of the guides is provided so as to sandwich the metal column and the polymer layer in the crossing direction so as to be spaced from the metal column with the polymer layer interposed therebetween.
9. The semiconductor device according to claim 8 , wherein the semiconductor device is formed by stacking a plurality of planar supports in which one or a plurality of the metal columns and a plurality of the guides are provided so as to stretch along a surface in a vertical direction to the surface.
10. The semiconductor device according to claim 6 , wherein
the polymer layer includes a hydrophilic polymer layer provided on an inner side of the guide and a hydrophobic polymer layer provided on an inner side of the hydrophilic polymer layer, and
the metal column is provided on an inner side of the hydrophobic polymer layer.
11. The semiconductor device according to claim 6 , wherein an inner portion of the guide is formed of metal.
12. The semiconductor device according to claim 6 , wherein the metal column is a multi-particle member.
13. The semiconductor device according to claim 6 , wherein a material of the metal column has a melting point equal to or higher than a melting point of a material of the polymer layer.
14. A semiconductor device comprising:
a metal column that extends in a stretching direction;
a polymer layer that directly contacts the metal column from a direction crossing the stretching direction; and
a guide that surrounds the polymer layer in the crossing direction so as to be spaced from the metal column with the polymer layer interposed therebetween,
wherein the guide is hydrophobic and a region of the polymer layer making contact with the guide is hydrophobic.
15. The semiconductor device according to claim 14 , wherein
the polymer layer includes a hydrophobic polymer layer provided on an inner side of the guide and
a hydrophilic polymer layer provided on an inner side of the hydrophilic polymer layer, and the metal column is provided on an inner side of the hydrophilic polymer layer.
16. The semiconductor device according to claim 14 , further comprising:
a semiconductor substrate, wherein
the guide is an insulator film formed on an inner surface of a through-hole that passes through the semiconductor substrate,
the polymer layer is filled in the through-hole, and
the metal column is a penetration electrode that passes through the polymer layer.
17. The semiconductor device according to claim 14 , wherein
the metal column stretches in a horizontal direction,
the polymer layer is provided so as to sandwich the metal column from a direction crossing the stretching direction, and
a pair of the guides is provided so as to sandwich the metal column and the polymer layer in the crossing direction so as to be spaced from the metal column with the polymer layer interposed therebetween.
18. The semiconductor device according to claim 17 , wherein the semiconductor device is formed by stacking a plurality of planar supports in which one or a plurality of the metal columns and a plurality of the guides are provided so as to stretch along a surface in a vertical direction to the surface.
19. The semiconductor device according to claim 14 , wherein an inner portion of the guide is formed of metal.
20. The semiconductor device according to claim 14 , wherein the metal column is a multi-particle member.
21. The semiconductor device according to claim 14 , wherein a material of the metal column has a melting point equal to or higher than a melting point of a material of the polymer layer.