Memory system performing read operation with read voltage
According to one embodiment, a memory system includes a nonvolatile semiconductor memory device, a voltage generation unit and a control unit. The nonvolatile semiconductor memory device includes a memory cell array having a plurality of blocks each including a plurality of memory cells, and a voltage generation unit configured to change a read level of the memory cell. The control unit controls write, read, and erase of the nonvolatile semiconductor memory device. The control unit changes the read level between a start of use of the nonvolatile semiconductor memory device and a timing after an elapse of a time.
1. A memory system comprising:
a nonvolatile semiconductor memory device including a memory cell, and
a control circuit configured to:
cause the nonvolatile semiconductor memory device to execute a first read operation to the memory cell with a first voltage,
in a case where an error is detected after the first read operation, cause, the nonvolatile semiconductor memory device to execute a second read operation to the memory cell with a second voltage, the second voltage being different from the first voltage,
in a case where an error is not detected after the second read operation, record data related to the second voltage,
in a case where an error is detected after the second read operation, cause, the nonvolatile semiconductor memory device to execute a third read operation with a third voltage that is based on the recorded data related to the second voltage, the third voltage being different from the first voltage and the second voltage,
in a case where an error is not detected after the third read operation, record the data related to the third voltage.
2. The memory system of claim 1 , wherein:
the second voltage is higher than the first voltage, and
the third voltage is lower than the first voltage.
3. A method of memory system comprising a nonvolatile semiconductor memory device including a memory cell, the method comprising:
causing the nonvolatile semiconductor memory device to execute a first read operation to the memory cell with a first voltage,
in a case where an error is detected after the first read operation, causing, the nonvolatile semiconductor memory device to execute a second read operation to the memory cell with a second voltage, the second voltage being different from the first voltage,
in a case where an error is not detected after the second read operation, recording data related to the second voltage,
in a case where an error is detected after the second read operation, causing, the nonvolatile semiconductor memory device to execute a third read operation with a third voltage that is based on the recorded data related to the second voltage, the third voltage being different from the first voltage and the second voltage,
in a case where an error is not detected after the third read operation, recording the data related to the third voltage.
4. The method of claim 3 , wherein:
the second voltage is higher than the first voltage, and
the third voltage is lower than the first voltage.
5. The method of claim 3 , wherein the second voltage is higher or lower than the first voltage.
6. The method of claim 3 , wherein a time of the first read operation is different from a time of the second read operation.
7. The method of claim 6 , wherein the time of the first read operation is different from the time of the second read operation by one of changing a precharge voltage of a sense node of the memory cell and changing the number of times of sense.
8. The method of claim 6 , wherein a fourth voltage supplied to an unselected word line adjacent to a selected word line in the second read operation is higher than a fifth voltage supplied to the unselected word line in the first read operation.
9. The method of claim 3 , further comprising:
recording the data related to the second voltage in a case where the second voltage is set based on a standing time of the nonvolatile semiconductor memory device.
10. The method of claim 3 , further comprising:
recording the data related to the second voltage in a case where the second voltage is set based on at least one of a write count, an erase count, and a read count.