Plasma processing apparatus
Provided is a plasma processing apparatus capable of obtaining desired etch profiles and preventing the degradation of yield rates due to the adhesion of particles, and equipped with a processing chamber in which a sample is plasma-treated; a radio-frequency power source for supplying radio-frequency power used to generate plasma; a sample stage which is provided with electrodes for electrostatically adsorbing the sample and on which the sample is mounted; and a DC power supply for applying DC voltages to the electrodes, the apparatus being further equipped with a control apparatus for controlling the DC power supply so as to apply such DC voltages as to decrease the absolute value of the potential of the sample in the absence of the plasma.
1. A plasma processing apparatus comprising:
a processing chamber in which a sample Is plasma-processed;
a radio-frequency power source for supplying radio-frequency power to generate plasma;
a sample stage which is provided with a plurality of electrodes comprising an inner electrode and an outer electrode, for electrostatically chucking the sample and on which the sample is mounted;
a DC power supply for applying DC voltages to the plurality of electrodes;
a plurality of heaters disposed in the sample stage and comprising an inner heater and an outer heater; and
a control apparatus configured to control the DC power supply to each of the inner electrode and the outer electrode to apply said DC voltages so as to make a range of a potential of the sample on the basis of a table and a calculated sample potential to be within a corrected range of the potential of the sample when a temperature of the sample stage before starting plasma-processing is adjusted to a preset temperature of the sample stage in the absence of plasma, the table defining a relationship between temperature and resistance values, and when an inside temperature of the inner heater is different from an outside temperature of the outer heater,
wherein the control apparatus is further configured to control a temperature of the plurality of heaters such that a temperature of the outer heater is higher than a temperature of the inner heater during a period of a first processing step, the temperature of the inner heater is higher than the temperature of the outer heater during a period of a second processing step, and the temperature of the outer heater is higher than the temperature of the inner heater during a period of a third processing step, while maintaining a temperature of a stage coolant at a substantially constant value during the first, second, and third processing steps, and
wherein the first, second, and third processing steps are performed in that order.
2. The plasma processing apparatus according to claim 1 , wherein the temperature of the sample stage is controlled by the inner heater and the outer heater.
3. The plasma processing apparatus according to claim 2 , wherein the potential of the sample is a value that prevents particles from adhering to the sample.
4. The plasma processing apparatus according to claim 1 , wherein the potential of the sample is a value that prevents particles from adhering to the sample.