Lead-free low-melting glass composition, low-temperature sealing glass frit, low-temperature sealing glass paste, conductive material, and conductive glass paste containing glass composition, and glass-sealed component and electric/electronic component prepared using the same

1. A lead-free low-melting glass composition comprising:

a principal component; and

an additional component,

the principal component comprising vanadium oxide, tellurium oxide and silver oxide, and

the additional component comprising at least one substance selected from the group consisting of yttrium oxide and lanthanoid oxides,

wherein the additional component comprises 0.1 to 3.0 mole percent oxide.

2. The lead-free low-melting glass composition according to claim 1 ,

wherein the additional component comprises at least one substance selected from the group consisting of Y 2 O 3 , La 2 O 3 , CeO 2 , Er 2 O 3 and Yb 2 O 3 , and

wherein the percent oxide in the additional component is 0.1 to 2.0 mole percent.

3. The lead-free low-melting glass composition according to claim 1 ,

wherein the principal component comprises a total content of V 2 O 5 , TeO 2 , and Ag 2 O of 85 mole percent or more in terms of oxide, and

wherein the TeO 2 and the Ag 2 O are each at a content of 1 to 2 times the content of V 2 O 5 .

4. The lead-free low-melting glass composition according to claim 3 , further comprising at least one selected from the group consisting of BaO, WO 3 and P 2 O 5 ,

wherein a total content of BaO, WO 3 and P 2 O 5 is 13 mole percent or less in terms of oxide.

5. The lead-free low-melting glass composition according to claim 1 ,

wherein the glass composition has a softening point of 280° C. or lower, the softening point being determined as a second endothermic peak temperature by a differential thermal analysis.

6. The lead-free low-melting glass composition according to claim 5 ,

having a crystallization onset temperature higher than the softening point by 60° C. or more, the crystallization onset temperature being determined by the differential thermal analysis.

7. A low-temperature sealing glass frit comprising:

the lead-free low-melting glass composition according to claim 1 ; and

low-thermal-expansion ceramic particles,

wherein the lead-free low-melting glass composition is at 40 or more volume percent and less than 100 volume percent in the low-temperature sealing frit, and

the low-thermal-expansion ceramic particles is at greater than 0 volume percent and 60 or less volume percent in the low-temperature sealing frit.

8. The low-temperature sealing glass frit according to claim 7 ,

wherein the low-thermal-expansion ceramic particles comprise at least one substance selected from the group consisting of zirconium phosphate tungstate (Zr 2 (WO 4 )(PO 4 ) 2 ), quartz glass (SiO 2 ), zirconium silicate (ZrSiO 4 ), aluminum oxide (Al 2 O 3 ), mullite (3Al 2 O 3 .2SiO 2 ) and niobium oxide (Nb 2 O 5 ).

9. A low-temperature sealing glass paste comprising:

particles formed of the lead-free low-melting glass composition according to claim 1 ;

low-thermal-expansion ceramic particles; and

a solvent.

10. The low-temperature sealing glass paste according to claim 9 ,

wherein the low-thermal-expansion ceramic particles include at least one substance selected from the group consisting of zirconium phosphate tungstate (Zr 2 (WO 4 ) (PO 4 ) 2 ), quartz glass (SiO 2 ), zirconium silicate (ZrSiO 4 ), aluminum oxide (Al 2 O 3 ), mullite (3Al 2 O 3 .2SiO 2 ) and niobium oxide (Nb 2 O 5 ), and

wherein the solvent includes at least one of α-terpineol and diethylene glycol n-butyl ether acetate.

11. A conductive material comprising:

the lead-free low-melting glass composition according to claim 1 ; and

metal particles,

wherein the lead-free low-melting glass composition is 5 or more volume percent and less than 100 volume percent of the conductive material, and

the metal particles are greater than 0 volume percent and 95 or less volume percent of the conductive material.

12. The conductive material according to claim 11 ,

wherein the metal particles include at least one substance selected from the group consisting of silver (Ag), silver alloys, copper (Cu), copper alloys, aluminum (Al), aluminum alloys, tin (Sn) and tin alloys.

13. A conductive glass paste comprising:

particles formed of the lead-free low-melting glass composition according to claim 1 ; and

a solvent.

14. The conductive glass paste according to claim 13 , further comprising metal particles.

15. The conductive glass paste according to claim 13 ,

wherein the solvent includes at least one of α-terpineol and diethylene glycol n-butyl ether acetate.

16. A glass-sealed component having a seal portion including 40 to 100 volume percent of a lead-free low-melting glass phase,

wherein the lead-free low-melting glass phase comprises a principal component including a vanadium oxide, a tellurium oxide and a silver oxide, and

an additional component comprising at least one selected from the group consisting of yttrium oxide and lanthanoid oxides, and

the additional component is 0.1 to 3.0 mole percent of the lead-free low-melting glass phase.

17. The glass-sealed component according to claim 16 ,

wherein the lead-free low-melting glass phase comprises the principal component in a total content of 85 mole percent or more in terms of oxide, and the TeO 2 and Ag 2 O are each at 1 to 2 times the content of V 2 O 5 , and

wherein the additional component comprises at least one selected from the group consisting of Y 2 O 3 , La 2 O 3 , CeO 2 , Er 2 O 3 , and Yb 2 O 3 , and

the additional component is 0.1 to 2.0 mole percent of the lead-free low-melting glass phase, and

wherein the lead-free low-melting glass phase further comprises a secondary component comprising at least one substance selected from the group consisting of BaO, WO 3 and P 2 O 5 , and a total content of the secondary component is 13 mole percent or less of the lead-free low-melting glass phase in terms of oxide.

18. The glass-sealed component according to claim 16 ,

being one of a vacuum-insulating double glass panel and a display panel.

19. An electrical/electronic component comprising at least one unit selected from the group consisting of electrodes, interconnections, and conductive junctions,

wherein the unit includes 5 to 100 volume percent of a lead-free low-melting glass phase, and 0 to 95 volume percent of metal particles,

the lead-free low-melting glass phase comprising a principal component and an additional component,

the principal component comprising a vanadium oxide, a tellurium oxide, and a silver oxide,

the additional component comprising at least one selected from the group consisting of yttrium oxide, and lanthanoid oxides,

the additional component being 0.1 to 3.0 mole percent of the lead-free low-melting glass phase,

the metal particles comprising at least one substance selected from the group consisting of silver (Ag), silver alloys, copper (Cu), copper alloys, aluminum (Al), aluminum alloys, tin (Sn) and tin alloys.

20. The electrical/electronic component according to claim 19 ,

wherein the principal component is at 85 mole percent or more in terms of V 2 O 5 , TeO 2 , and Ag 2 O in the lead-free low-melting glass phase,

wherein the TeO 2 and Ag 2 O are each at 1 to 2 times as much as the content of V 2 O 5 ,

wherein the additional component comprises at least one selected from the group consisting of Y 2 O 3 , La 2 O 3 , CeO 2 , Er 2 O 3 , and Yb 2 O 3 ,

wherein the additional component is at 0.1 to 2.0 mole percent of the lead-free low-melting glass phase, and

wherein the lead-free low-melting glass phase further comprises a secondary component comprising at least one substance selected from the group consisting of BaO, WO 3 , and P 2 O 5 , the secondary component being 13 mole percent or less in terms of oxide in the lead-free low-melting glass phase.