Multi-chip package structure having blocking structure, wafer level chip package structure having blocking structure and manufacturing process thereof

1. A multi-chip package structure, comprising:

a first chip, having a chip connecting zone, a plurality of first inner pads located in the chip connecting zone and a plurality of first outer pads located outside of the chip connecting zone;

at least one blocking structure, disposed on a region outside of the chip connecting zone of the first chip and between the first inner pads and the first outer pads to surround the first inner pads;

a plurality of first conductive bumps, disposed on the first outer pads;

a second chip, flipped on the chip connecting zone, and the second chip having a plurality of second pads;

a plurality of second conductive bumps, located between the first inner pads and the second pads, and each of the first inner pads being electrically connected with the corresponding second pad through the corresponding second conductive bump;

an underfill, located between the first chip and the second chip so as to cover the second conductive bumps;

a first insulating layer, disposed on the first chip and exposing the first inner pads and the first outer pads;

a redistribution circuit layer, disposed on the first insulating layer and electrically connected with the first inner pads; and

a second insulating layer, covering on the first insulating layer and the redistribution circuit layer to expose a portion of the redistribution circuit layer and the first outer pads, wherein the second conductive bumps are electrically connected with the first inner pads through the redistribution circuit layer.

2. The multi-chip package structure as recited in claim 1 , wherein a size of the first chip is greater than a size of the second chip.

3. The multi-chip package structure as recited in claim 1 , wherein the second insulating layer comprises a first portion and a second portion, the first portion covers on the redistribution circuit layer and exposes a portion of the redistribution circuit layer, the second portion is at least a part of the blocking structure, and the first portion and the second portion maintain a gap therebetween.

4. The multi-chip package structure as recited in claim 3 , wherein the second portion and one of the first conductive bumps also maintain a gap therebetween.

5. The multi-chip package structure as recited in claim 1 , further comprising a circuit board, wherein the circuit board is electrically connected with the first conductive bumps, and the second chip, the first conductive bumps and the second conductive bumps are located between the circuit board and the first chip.

6. The multi-chip package structure as recited in claim 1 , wherein a height of each of the first conductive bumps is greater than a height of each of the second conductive bumps.

7. The multi-chip package structure as recited in claim 1 , wherein the blocking structure comprises a metal layer.

8. A wafer level chip package structure, comprising:

a wafer, having a plurality of first chip arranged in an array and a plurality of blocking structures corresponded to the first chips, each of the first chips having a chip connecting zone, a plurality of first inner pads located in the chip connecting zone and a plurality of first outer pads located outside of the chip connecting zone, wherein each of the blocking structures is disposed on a region outside of the chip connecting zone of the corresponding first chip and between the first inner pads and the first outer pads to surround the first inner pads;

a plurality of first conductive bumps, disposed on the first outer pads;

a plurality of second chips, flipped on the chip connecting zones, and each of the second chips having a plurality of second pads;

a plurality of second conductive bumps, located between the first inner pads and the second pads, and each of the first inner pads being electrically connected with the corresponding second pad through the corresponding second conductive bump;

an underfill, located between the first chips and the second chips so as to cover the second conductive bumps;

a first insulating layer, disposed on the first chips and exposing the first inner pads and the first outer pads;

a redistribution circuit layer, disposed on the first insulating layer and electrically connected with the first inner pads; and

a second insulating layer, covering on the first insulating layer and the redistribution circuit layer to expose a portion of the redistribution circuit layer and the first outer pads, wherein the second conductive bumps are electrically connected with the first inner pads through the redistribution circuit layer.

9. The wafer level chip package structure as recited in claim 8 , wherein a size of the first chips is greater than a size of the second chips.

10. The wafer level chip package structure as recited in claim 8 , wherein the second insulating layer comprises a first portion and a second portion, the first portion covers on the redistribution circuit layer and exposes a portion of the redistribution circuit layer, the second portion is at least a part of one of the blocking structures, and the first portion and the second portion maintain a gap therebetween.

11. The wafer level chip package structure as recited in claim 10 , wherein the second portion and one of the first conductive bumps also maintain a gap therebetween.

12. The wafer level chip package structure as recited in claim 8 , wherein a height of each of the first conductive bumps is greater than a height of each of the second conductive bumps.

13. The wafer level chip package structure as recited in claim 8 , wherein the blocking structures comprise metal layers.