Method of manufacturing semiconductor device, substrate processing apparatus, and non-transitory computer-readable recording medium
A technique includes forming a film having a borazine ring structure and containing boron and nitrogen on a substrate by intermittently performing an act of simultaneously performing: (a) supplying borazine-based gas including a ligand to the substrate; and (b) supplying a ligand desorption gas which desorbs the ligand to the substrate, wherein the (a) and (b) are performed under a condition where the borazine ring structure in the borazine-based gas is held.
1. A method of manufacturing a semiconductor device, comprising forming a film having a borazine ring structure and containing boron and nitrogen on a substrate by intermittently performing an act of simultaneously performing:
(a) supplying borazine-based gas including a ligand to the substrate; and
(b) supplying a ligand desorption gas which desorbs the ligand to the substrate,
wherein the (a) and (b) are performed under a condition where the borazine ring structure in the borazine-based gas is held.
2. The method according to claim 1 , wherein the forming of the film comprises stopping the supply of at least one selected from a group consisting of the borazine-based gas and the ligand desorption gas.
3. The method according to claim 1 , wherein the forming of the film comprises intermittently supplying one of the borazine-based gas and the ligand desorption gas while the other of the borazine-based gas and the ligand desorption gas is continuously supplied.
4. The method according to claim 1 , wherein the forming of the film comprises intermittently supplying the borazine-based gas while the ligand desorption gas is continuously supplied.
5. The method according to claim 1 , wherein the forming of the film comprises intermittently supplying the ligand desorption gas while the borazine-based gas is continuously supplied.
6. The method according to claim 1 , wherein the forming of the film comprises stopping the supply of the borazine-based gas and the ligand desorption gas.
7. The method according to claim 1 , wherein the forming of the film comprises stopping the supply of the borazine-based gas and the ligand desorption gas, and purging a space where the substrate is present.
8. The method according to claim 1 , wherein, in the forming of the film, the ligand desorption gas is excited to a plasma state and is then supplied to the substrate.
9. The method according to claim 1 , wherein the forming of the film further comprises supplying non-borazine-based boron-containing gas to the substrate.
10. The method according to claim 9 , wherein the forming of the film further comprises intermittently performing an act of simultaneously performing:
(c) supplying the boron-containing gas; and
(d) supplying the ligand desorption gas.
11. The method according to claim 9 , wherein, in the forming of the film, the borazine-based gas and the boron-containing gas are intermittently supplied while the ligand desorption gas is continuously supplied.
12. The method according to claim 9 , wherein the supplying of the boron-containing gas is performed before the supplying of the borazine-based gas.
13. The method according to claim 1 , wherein the ligand comprises an organic ligand.
14. The method according to claim 1 , wherein the ligand desorption gas comprises a nitrogen-containing gas.
15. A substrate processing apparatus comprising:
a process chamber configured to accommodate a substrate;
a borazine-based gas supply system configured to supply borazine-based gas including a ligand to the substrate in the process chamber;
a ligand desorption gas supply system configured to supply ligand desorption gas which desorbs the ligand to the substrate in the process chamber;
a heater configured to heat the substrate in the process chamber;
a pressure regulator configured to regulate a pressure in the process chamber; and
a controller configured to control the borazine-based gas supply system, the ligand desorption gas supply system, the heater, and the pressure regulator so as to form a film having a borazine ring structure and containing boron and nitrogen on the substrate by intermittently performing an act of simultaneously performing:
(a) supplying the borazine-based gas to the substrate in the process chamber; and
(b) supplying the ligand desorption gas to the substrate in the process chamber,
wherein the (a) and (b) are performed under a condition where the borazine ring structure in the borazine-based gas is held.
16. A non-transitory computer-readable recording medium storing a program configured to cause a computer to perform forming a film having a borazine ring structure and containing boron and nitrogen on a substrate by intermittently performing an act of simultaneously performing:
(a) supplying borazine-based gas including a ligand to the substrate; and
(b) supplying a ligand desorption gas which desorbs the ligand to the substrate,
wherein the (a) and (b) are performed under a condition where the borazine ring structure in the borazine-based gas is held.