Semiconductor device including Schottky barrier diode and power MOSFETs and a manufacturing method of the same
In a non-insulated DC-DC converter having a circuit in which a power MOS•FET high-side switch and a power MOS•FET low-side switch are connected in series, the power MOS•FET low-side switch and a Schottky barrier diode to be connected in parallel with the power MOS•FET low-side switch are formed within one semiconductor chip. The formation region SDR of the Schottky barrier diode is disposed in the center in the shorter direction of the semiconductor chip, and on both sides thereof, the formation regions of the power MOS•FET low-side switch are disposed. From the gate finger in the vicinity of both long sides on the main surface of the semiconductor chip toward the formation region SDR of the Schottky barrier diode, a plurality of gate fingers are disposed so as to interpose the formation region SDR between them.
1. A semiconductor device comprising:
a semiconductor chip including a schottky barrier diode and a plurality of power MOSFETs which are formed on a semiconductor substrate,
wherein the semiconductor substrate includes a first long side, a second long side located on the opposite side of the first long side, a first short side and a second short side located on the opposite side of the first short side,
wherein the schottky barrier diode is formed in a first region of the semiconductor substrate and includes an anode electrode and a cathode electrode,
wherein the plurality of power MOSFETs are formed in a plurality of second regions of the semiconductor substrate and respectively include a gate electrode, a source region and a drain region,
wherein a first metal layer is formed over the semiconductor substrate, is electrically connected to the gate electrodes and surrounds the first region and the second regions in a planar view,
wherein a plurality of gate fingers are unified with the first metal layer, are extending to a direction along the first short side and are arranged between each of the second regions,
wherein a second metal layer is formed over the first region and the second regions and is electrically connected to the source regions and the anode electrode, and
wherein a length along the first long side of the first region is larger than a length along the first short side of the first region.
2. A semiconductor device according to the claim 1 ,
wherein, in the direction along the first short side, the first region is arranged between the second regions arranged near the first long side and the second regions arranged near the second long side.
3. A semiconductor device according to the claim 1 ,
wherein each of the gate electrodes is formed in grooves formed in the semiconductor substrate.
4. A semiconductor device according to the claim 3 ,
wherein a length along the first long side of each of the gate electrodes is larger than a length along the first short side of each of the gate electrodes.
5. A semiconductor device according to the claim 1 ,
wherein each of the gate electrodes includes a poly silicon film,
wherein the first metal layer and gate fingers include a first aluminum film, respectively, and
wherein the second metal layer includes a second aluminum film.
6. A semiconductor device comprising:
a semiconductor chip including a schottky barrier diode and a plurality of power MOSFETs which are formed on a semiconductor substrate,
wherein the semiconductor substrate includes a first long side, a second long side located on the opposite side of the first long side, a first short side and a second short side located on the opposite side of the first short side,
wherein the schottky barrier diode is formed in a diode region of the semiconductor substrate and includes an anode electrode and a cathode electrode,
wherein the plurality of power MOSFETs are formed in first and second MOSFET regions of the semiconductor substrate and respectively include a gate electrode, a source region and a drain region,
wherein, in a direction along the first short side, the first MOSFET region, the diode region and the second MOSFET region are arranged in order,
wherein a first metal layer is formed over the semiconductor substrate, is electrically connected to the gate electrodes and surrounds the diode region, the first MOSFET region and the second MOSFET region in a planar view,
wherein a plurality of first gate fingers are unified with the first metal layer and are extending toward from the first long side to the second long side,
wherein a plurality of second gate fingers are unified with the first metal layer and are extending toward from the second long side to the first long side,
wherein the first MOSFET region is arranged between the first gate fingers,
wherein the second MOSFET region is arranged between the second gate fingers,
wherein a second metal layer is formed over the diode region, the first MOSFET region and the second MOSFET region and is electrically connected to the source regions and the anode electrode, and
wherein a length along the first long side of the diode region is larger than a length along the first short side of the diode region.
7. A semiconductor device according to the claim 6 ,
wherein each of the gate electrodes is formed in grooves formed in the semiconductor substrate.
8. A semiconductor device according to the claim 6 ,
wherein a length along the first long side of each of the gate electrodes is larger than a length along the first short side of each of the gate electrodes.
9. A semiconductor device according to the claim 8 ,
wherein each of the gate electrodes includes a poly silicon film,
wherein the first metal layer, the first gate fingers and the second gate fingers include a first aluminum film, respectively, and
wherein the second metal layer includes a second aluminum film.
10. A semiconductor device according to the claim 6 ,
wherein the power MISFETs are not formed in the diode region, and
wherein the schottky barrier diode is not formed in the first MOSFET region and the second MOSFET region.