Sacrificial carrier dicing of semiconductor wafers

1. A method for sacrificial carrier dicing of semiconductor wafers, the method comprising:

bonding a bottom layer of a semiconductor wafer to a top layer of a sacrificial carrier using adhesive film;

coupling the bottom layer of the semiconductor wafer to the top layer of the sacrificial carrier using a vacuum force, wherein the vacuum force is generated on the bottom layer of the semiconductor wafer through a plurality of vias in the sacrificial carrier;

bonding the bottom layer of the sacrificial carrier to clear dicing tape, wherein the clear dicing tape securely bonds the sacrificial carrier to a cutting surface of the saw for dicing of the semiconductor wafer into the set of chips; and

dicing the semiconductor wafer into a set of chips, wherein the dicing cuts through the semiconductor wafer and the adhesive film and into the sacrificial carrier, and wherein the sacrificial carrier dresses a diamond blade of a saw so as to expose one or more new, sharp layers of diamonds on the diamond blade.

2. The method of claim 1 , wherein the adhesive film is a UltraViolet (UV) sensitive film, and wherein the set of chips is extracted from the sacrificial carrier after dicing upon exposing the UV sensitive film to a UV light.

3. The method of claim 1 , wherein the adhesive film is an Infrared (IR) sensitive film and wherein the set of chips is extracted from the sacrificial carrier after dicing upon exposure of the IR sensitive film to an IR light.

4. The method of claim 1 , wherein the sacrificial carrier is a glass sacrificial carrier that is UltraViolet (UV) transmissible.

5. The method of claim 4 , wherein the sacrificial glass carrier is comprised of one of the group comprising quartz substrate, fused quartz substrate, and sapphire glass substrate.

6. The method of claim 4 , wherein the sacrificial glass carrier is a toughened sacrificial glass carrier and wherein the toughened sacrificial glass carrier is toughened through a use of at least one of dopants or tempering to provide a harder glass substrate which remains UV transmissible.

7. The method of claim 1 , wherein the sacrificial carrier is a sacrificial silicon substrate carrier that is Infrared (IR) transmissible.

8. The method of claim 1 , wherein the set of chips are extracted from the sacrificial carrier after dicing by releasing the vacuum force upon the set of chips remaining from the semiconductor wafer.

9. The method of claim 1 , wherein the bottom layer of the semiconductor wafer is an active side of the semiconductor wafer.