Isotopically-enriched boron-containing compounds, and methods of making and using same
View Patent ↗An isotopically-enriched, boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein at least one of the boron atoms contains a desired isotope of boron in a concentration or ratio greater than a natural abundance concentration or ratio thereof. The compound may have a chemical formula of B 2 F 4 . Synthesis methods for such compounds, and ion implantation methods using such compounds, are described, as well as storage and dispensing vessels in which the isotopically-enriched, boron-containing compound is advantageously contained for subsequent dispensing use.
1. A method for enhancing operation of an ion implantation system comprising: providing for use in the ion implantation system a first gas storage and dispensing vessel holding a boron precursor comprising two or more boron atoms and at least one fluorine atom, wherein the boron precursor is isotopically-enriched in at least one boron isotope, said first gas storage and dispensing vessel coupled to a first flow controller and a co-flow feed line;
providing a second gas storage and dispensing vessel containing diborane, said second gas storage and dispensing vessel coupled to a second flow controller and said gas feed line; and
modulating a flow of said isotopically-enriched boron precursor and modulating a flow of said diborane to form a co-flow mixture, the amount of isotopically-enriched boron precursor in the isotopically-enriched boron precursor and diborane co-flow mixture ranges from 1% to 99% by volume, based on total volume of isotopically-enriched boron precursor and diborane co-flow mixture, with diborane in the isotopically-enriched boron precursor and diborane co-flow mixture correspondingly ranging from 99% to 1% by volume, on the same total volume basis.
2. The method of claim 1 , wherein the isotopically-enriched boron precursor comprises B 2 F 4 .
3. The method of claim 2 , wherein said B 2 F 4 is isotopically enriched in 10 B.
4. The method of claim 2 , wherein said B 2 F 4 is isotopically enriched in 11 B.
5. The method of claim 1 , wherein the ion implantation system comprises a beamline ion implanter.
6. The method of claim 5 , wherein enhancing operation of the ion implantation system comprises generating ionic boron species and boron fragments resulting in at least one of increased beam current, increased ion source life, reduced levels of deposits in the ion implantation system, and reduced clogging of flow passages in the ion implantation system compared to the operation of said ion implantation system using a single boron precursor.
7. The method of claim 1 , wherein the first gas storage and dispensing vessel holds a storage medium for the boron precursor.
8. The method of claim 7 , wherein the storage medium comprises material selected from the group consisting of physical adsorbents and ionic liquids.
9. The method of claim 7 , wherein the storage medium comprises physical adsorbent.
10. The method of claim 1 , wherein the first gas storage and dispensing vessel comprises a pressure-regulated vessel.
11. The method of claim 1 , wherein the first gas storage and dispensing vessel further holds at least one co-flow gas.
12. The method of claim 11 , wherein the at least one co-flow gas comprises another boron precursor.
13. The method of claim 12 , wherein the isotopically-enriched boron precursor comprises B 2 F 4 and the other boron precursor comprises BF 3 .
14. The method of claim 13 , wherein the BF 3 is isotopically-enriched.
15. The method of claim 11 , wherein the isotopically-enriched boron precursor comprises B 2 F 4 , and the at least one co-flow gas comprises at least one of argon, xenon, nitrogen, helium, hydrogen, and ammonia.
16. The method of claim 1 , wherein the second gas storage and dispensing vessel contains isotopically enriched diborane.