Solid-state image pickup apparatus and image pickup system
An apparatus according to the present invention in which a first substrate including a photoelectric conversion element and a gate electrode of a transistor, and a second substrate including a peripheral circuit portion are placed upon each other. The first substrate does not include a high-melting-metal compound layer, and the second substrate includes a high-melting-metal compound layer.
1. An apparatus comprising:
a first substrate having a first transistor and a photoelectric conversion element;
a second substrate having a second transistor; and
a wiring structure arranged between the first substrate and the second substrate,
wherein a drain region of the first transistor has a semiconductor region disposed in contact with an insulating film, and a drain region of the second transistor has a metal compound layer.
2. The apparatus according to claim 1 , wherein the metal compound layer is formed of silicide.
3. The apparatus according to claim 1 , wherein the metal compound layer contains cobalt.
4. The apparatus according to claim 1 , wherein the drain region of the first transistor does not have a cobalt silicide layer.
5. The apparatus according to claim 1 , wherein the drain region of the first transistor has a semiconductor region that is connected to a plug.
6. The apparatus according to claim 1 , wherein a gate electrode of the first transistor is arranged between the insulating film and the first substrate.
7. The apparatus according to claim 1 , wherein the wiring structure has a wiring layer arranged between the first substrate and the second substrate, and the wiring layer includes a wire connected to the first transistor.
8. The apparatus according to claim 1 , wherein the wiring structure has a wiring layer arranged between the first substrate and the second substrate, and the wiring layer includes a wire connected to the drain region of the second transistor.
9. The apparatus according to claim 1 , wherein the insulating film is an interlayer insulating film of the wiring structure.
10. The apparatus according to claim 1 , wherein the insulating film is formed of silicon oxide.
11. The apparatus according to claim 1 , wherein a first film which is an interlayer insulating film of the wiring structure and a second film formed of silicon nitride or silicon carbide are arranged between the first substrate and the second substrate.
12. The apparatus according to claim 11 , wherein the wiring structure has a wiring layer including a wire connected to the first transistor, and the second film is arranged between the second substrate and the wiring layer.
13. The apparatus according to claim 11 , wherein the second film is arranged between the first film and the second substrate.
14. The apparatus according to claim 11 , wherein the wiring structure has a wiring layer including a wire whose main component is copper, and the second film contacts the wire.
15. The apparatus according to claim 1 wherein a source of the first transistor is connected to the photoelectric conversion element.
16. The apparatus according to claim 1 wherein the first substrate has a third transistor included in a source follower circuit.
17. The apparatus according to claim 1 , wherein the second substrate has an amplification transistor.
18. The apparatus according to claim 1 , wherein an AD converter is provided in the apparatus.
19. A system comprising:
an apparatus; and
a lens which forms an optical image on the apparatus,
wherein the apparatus comprising:
a first substrate having a first transistor and a photoelectric conversion element;
a second substrate having a second transistor; and
a wiring structure arranged between the first substrate and the second substrate,
wherein a drain region of the first transistor has a semiconductor region disposed in contact with an insulating film, and a drain region of the second transistor has a metal compound layer.
20. A system comprising:
an apparatus; and
a signal processing section that processes a signal output from the apparatus,
wherein the apparatus comprising:
a first substrate having a first transistor and a photoelectric conversion element;
a second substrate having a second transistor; and
a wiring structure arranged between the first substrate and the second substrate,
wherein a drain region of the first transistor has a semiconductor region disposed in contact with an insulating film, and a drain region of the second transistor has a metal compound layer.