Method of polishing semiconductor substrate

1. A method of polishing a substrate, comprising:

providing the substrate, wherein the substrate has an exposed silicon dioxide feature;

providing a chemical mechanical polishing composition, comprising, as initial components:

water,

0.01 to 40 wt % of a colloidal silica abrasive;

a zirconyl compound; and,

0 wt % of an oxidizer;

wherein a pH of the chemical mechanical polishing composition is ≦6;

providing a chemical mechanical polishing pad with a polishing surface;

dispensing the chemical mechanical polishing composition onto the polishing surface of the chemical mechanical polishing pad in proximity to an interface between the chemical mechanical polishing pad and the substrate; and,

creating dynamic contact at the interface between the chemical mechanical polishing pad and the substrate with a down force of 0.69 to 34.5 kPa;

wherein the substrate is polished; wherein some of the exposed silicon dioxide feature is removed from the substrate.

2. The method of claim 1 , wherein the exposed silicon dioxide feature is derived from a tetraethylorthosilicate.

3. The method of claim 2 , wherein the chemical mechanical polishing composition is corrosion inhibitor free.

4. The method of claim 2 ; wherein the chemical mechanical polishing composition has a silicon dioxide removal rate of ≧1,000 Å/min with a platen speed of 93 revolutions per minute, a carrier speed of 87 revolutions per minute, a chemical mechanical polishing composition flow rate of 200 mL/min, a nominal down force of 20.68 kPa on a 300 mm polishing machine; and, wherein the chemical mechanical polishing pad provided comprises a polyurethane polishing layer containing polymeric hollow core microparticles and a polyurethane impregnated non-woven subpad.

5. The method of claim 3 ; wherein the chemical mechanical polishing composition has a silicon dioxide removal rate of ≧1,000 Å/min with a platen speed of 93 revolutions per minute, a carrier speed of 87 revolutions per minute, a chemical mechanical polishing composition flow rate of 200 mL/min, a nominal down force of 20.68 kPa on a 300 mm polishing machine; and, wherein the chemical mechanical polishing pad provided comprises a polyurethane polishing layer containing polymeric hollow core microparticles and a polyurethane impregnated non-woven subpad.

6. The method of claim 1 , wherein the chemical mechanical polishing composition provided, consists of, as initial components:

the water,

0.1 to 40 wt % of the colloidal silica abrasive;

the zirconyl compound; and,

an inorganic acid.

7. The method of claim 6 , wherein the exposed silicon dioxide feature is derived from a tetraethylorthosilicate.

8. The method of claim 7 ; wherein the chemical mechanical polishing composition has a silicon dioxide removal rate of ≧1,000 Å/min with a platen speed of 93 revolutions per minute, a carrier speed of 87 revolutions per minute, a chemical mechanical polishing composition flow rate of 200 mL/min, a nominal down force of 20.68 kPa on a 300 mm polishing machine; and, wherein the chemical mechanical polishing pad provided comprises a polyurethane polishing layer containing polymeric hollow core microparticles and a polyurethane impregnated non-woven subpad.

9. The method of claim 6 , wherein the zirconyl compound is zirconyl chloride and wherein the inorganic acid is hydrochloric acid.

10. The method of claim 9 , wherein the exposed silicon dioxide feature is derived from a tetraethylorthosilicate; and, wherein the chemical mechanical polishing composition has a silicon dioxide removal rate of ≧1,000 Å/min with a platen speed of 93 revolutions per minute, a carrier speed of 87 revolutions per minute, a chemical mechanical polishing composition flow rate of 200 mL/min, a nominal down force of 20.68 kPa on a 300 mm polishing machine; and, wherein the chemical mechanical polishing pad provided comprises a polyurethane polishing layer containing polymeric hollow core microparticles and a polyurethane impregnated non-woven subpad.