Optical semiconductor structure for emitting light through aperture
The invention discloses a semiconductor structure, processing light signal, the semiconductor structure comprising: a first type semiconductor layer; a second type semiconductor layer; an active layer located between the first type semiconductor layer and the second type semiconductor layer; a reflector covered surfaces of the first type semiconductor layer and the second type semiconductor layer; a first pad disposed on a top surface of the reflector which is covered the first type semiconductor layer; a second pad disposed on the top surface of the reflector or second type semiconductor layer; an aperture disposed on the top surface of the first type semiconductor layer and passed through the reflector; and a light collection module disposed around the aperture or covered a top surface of the reflector.
1. An optical semiconductor structure comprising:
a first type semiconductor layer;
a second type semiconductor layer;
an active layer interposed between a first surface of the first type semiconductor layer and a first surface of the second type semiconductor layer;
a first reflector formed on a second surface of the first type semiconductor layer, wherein the first reflector having an aperture located on the second surface of the first type semiconductor layer;
a second reflector formed on a second surface of the second type semiconductor layer;
a light channel tube having light reflecting inner sidewalls aligned and connected to the aperture, protruding out from a surface of the first reflector;
an optically transparent material placed in the light channel tube, wherein the optically transparent material having a high refractive index;
the light channel tube having outer sidewalls; and
a packaging material covering and contacting the outer sidewalls of the light channel tube and the surface of the first reflector, wherein the packaging material is different from the optically transparent material having the high refractive index, or an air gap region, wherein the outer sidewalls of the light channel tube and the surface of the first reflector are exposed to the air gap region.
2. The optical semiconductor structure according to claim 1 , further comprising a third reflector covering sidewalls of the first type semiconductor layer, the active layer and the second type semiconductor layer.
3. The optical semiconductor structure according to claim 1 , wherein a thermal conductivity substrate is coupled to the second type semiconductor layer.
4. The optical semiconductor structure according to claim 1 , further comprising:
a first pad electrically connected to the first type semiconductor layer;
a second pad electrically connected to the second type semiconductor layer;
a first bump disposed on the first pad; and
a second bump disposed on the second pad.
5. The optical semiconductor structure according to claim 1 , wherein the optical semiconductor structure is a vertical cavity surface emitting laser structure; both a portion of the first type semiconductor layer and a portion of the second type semiconductor layer have a current confinement region and an optical confinement region; and a distributed Bragg reflector (DBR) structure in the first type semiconductor layer and the second type semiconductor layer provides a reflectivity properties to emit a laser.
6. The optical semiconductor structure according to claim 1 , wherein the inner light reflecting sidewalls of the light channel tube coated with a reflecting metal selected from at least one of Cr, Al, Ti, Ag, Ni, Au, Cu, Sn, In and a combination thereof.
7. The optical semiconductor structure according to claim 1 , wherein the optically transparent light channel guide guiding the light entering the aperture opening to the opposite side of the aperture opening.
8. The optical semiconductor structure according to claim 1 , wherein the optically transparent light channel guide comprised of transparent high refractive index material selected from at least one of transparent sol-gel, transparent polyimide, transparent silicone, transparent PMMA, transparent epoxy, transparent glue, transparent gel and a combination thereof.
9. The optical semiconductor structure according to claim 1 , wherein the light channel tube comprising one or more connecting light channel tubes guiding the emitting light to the desired direction.
10. The optical semiconductor structure according to claim 1 , wherein the packaging material is a low refractive index material selected from at least one of polyimide, parylene, epoxy, silicone, PMMA, polydimethylsiloxane, gel, glue, white glue, plastic, ceramic, adhesion promotor, dyeing silicone, dyeing epoxy, dyeing gel, dyeing glue, dyeing photoresist material, mixing the polymer with particles and a combination thereof.
11. An optical semiconductor light signal processing structure comprising:
a first type semiconductor layer;
a second type semiconductor layer;
an active layer interposed between a first surface of the first type semiconductor layer and a first surface of the second type semiconductor layer;
a first reflector formed on a second surface of the first type semiconductor layer,
wherein the first reflector having an aperture located on the second surface of the first type semiconductor layer;
a second reflector formed on a second surface of the second type semiconductor layer;
a first light channel tube having light reflecting inner sidewalls aligned and connected to the aperture, protruding out from a surface of the first reflector;
a second light channel tube having a light reflecting inner sidewalls, wherein a light signal path inside the first light channel tube are is connected to a light signal path inside the second light channel tube;
the first and second light channel tube having outer sidewalls;
an optically transparent light channel guide containing a transparent material inside the first and second light channel tube; and
a packaging material covering and contacting the outer sidewalls of the first and second light channel tube and the surface of the first reflector, wherein the packaging material is different from the transparent material having the high refractive index, or an air gap region, wherein the outer sidewalls of the first and second light channel tube and the surface of the first reflector are exposed to the air gap region.
12. The optical semiconductor light signal processing structure according to claim 11 , wherein the emitting light from the active layer entering the aperture opening side of the first light channel tube and guided to the opposite side of the aperture opening of the first light channel tube connecting to one or more light channel tubes guiding the emitting light to a desired direction.
13. The optical semiconductor light signal processing structure according to claim 11 , wherein the inner light reflecting sidewalls of the light channel tube is a reflecting metal layer and selected from at least one of Cr, Al, Ti, Ag, Ni, Au, Cu, Sn, In and a combination thereof.
14. The optical semiconductor light signal processing structure according to claim 11 , wherein an optical transparent light channel guide comprised of transparent high refractive index material inside the light channel tube and the transparent high refractive index material is selected from at least one of transparent sol-gel, transparent polyimide, transparent silicone, transparent PMMA, transparent epoxy, transparent glue, transparent gel and a combination thereof.
15. The optical semiconductor light signal processing structure according to claim 11 , wherein a third reflector covering the sidewalls of the first type semiconductor layer, the active layer and the second type semiconductor layer.
16. The optical semiconductor light signal processing structure according to claim 11 , wherein a thermal conductivity substrate coupled to the second type semiconductor layer.
17. The optical semiconductor light signal processing structure according to claim 11 , further comprising:
a first pad electrically connected to the first type semiconductor layer;
a second pad electrically connected to the second type semiconductor layer;
a first bump disposed on the first pad; and
a second bump disposed on the second pad.
18. The optical semiconductor light signal processing structure according to claim 11 , wherein the optical semiconductor light signal processing structure is a vertical cavity surface emitting laser structure; a portion of the first type semiconductor layer and a portion of the second type semiconductor layer have a current confinement region and an optical confinement region; and a distributed Bragg reflector (DBR) structure in the first type semiconductor layer and the second type semiconductor layer provides a reflectivity properties to emit a laser.
19. The optical semiconductor light signal processing structure according to claim 11 , wherein the light signal is delivered from a transmitting device to a receiving device by the light channel tubes.
20. The optical semiconductor light signal processing structure according to claim 11 , wherein the packaging material is a low refractive index material selected from at least one of polyimide, parylene, epoxy, silicone, PMMA, polydimethylsiloxane, gel, glue, white glue, plastic, ceramic, adhesion promotor, dyeing silicone, dyeing epoxy, dyeing gel, dyeing glue, dyeing photoresist material, mixing the polymer with particles and a combination thereof.