Bulk fin STI formation
View Patent ↗Techniques for STI in fin device structures formed on bulk substrates are provided. In one aspect, a method of forming a fin device in a bulk substrate includes the steps of: forming fins and trenches in between the fins in the bulk substrate; and annealing the bulk substrate in an oxygen ambient under conditions sufficient to form a thermal oxide on sidewalls of the fins and which completely fills the trenches, wherein the thermal oxide forms a STI region between each of the fins. A method of forming a fin device in a bulk substrate is also provided where a deposited STI oxide is used in combination with a thermal oxide. A fin device is also provided.
1. A method of forming a fin device in a bulk substrate, the method comprising the steps of:
forming fins and trenches in between the fins in the bulk substrate, wherein the fins are formed having an initial width W initial that is from about 10% to about 30%, and ranges therebetween, greater than a desired final width of the fins of from about 2 nm to about 90 nm, and ranges therebetween, to compensate for fin width lost during formation of a thermal oxide; and
annealing the bulk substrate in an oxygen ambient under conditions sufficient to form the thermal oxide on sidewalls of the fins which completely fills the trenches and is void-free, wherein the thermal oxide forms a shallow trench isolation (STI) region between each of the fins, and wherein a base of each of the fins has a faceted shape due to the annealing being used to form the thermal oxide that completely fills the trenches.
2. The method of claim 1 , wherein the trenches have a width of from about 5 nm to about 500 nm, and ranges therebetween, and a depth of from about 10 nm to about 1 μm, and ranges therebetween.
3. The method of claim 1 , wherein W initial is from about 5 nm to about 100 nm, and ranges therebetween.
4. The method of claim 1 , wherein the step of forming fins and the trenches in between the fins in the bulk substrate comprises the steps of:
forming fin hardmasks on the bulk substrate; and
patterning the fins and the trenches in between the fins in the bulk substrate using the fin hardmasks,
wherein the fin hardmasks are kept in place on top of the fins while performing the annealing step.
5. The method of claim 1 , further comprising the step of:
forming a conformal oxide liner on the fins prior to performing the annealing step.
6. The method of claim 5 , wherein the conformal oxide liner has a thickness of from about 1 nm to about 5 nm, and ranges therebetween.
7. The method of claim 1 , wherein the conditions sufficient to form the thermal oxide comprise a temperature of from about 750° C. to about 1,500° C., and ranges therebetween.
8. The method of claim 1 , wherein the conditions sufficient to form the thermal oxide comprise a duration of from about 10 seconds to about 10 hours, and ranges therebetween.
9. The method of claim 1 , further comprising the steps of:
recessing the thermal oxide to expose the fins;
forming a gate over a portion of each of the fins that serve as a channel region of the fin device; and
forming source and drain regions on portion of the fins extending out from the gate.
10. A method of forming a fin device in a bulk substrate, the method comprising the steps of:
forming fins and trenches in between the fins in the bulk substrate, wherein the fins are formed having an initial width W initial that is from about 10% to about 30%, and ranges therebetween, greater than a desired final width of the fins of from about 2 nm to about 90 nm, and ranges therebetween, to compensate for fin width lost during formation of a thermal oxide;
depositing an STI oxide into the trenches, wherein the STI oxide partially fills the trenches such that voids are present within the trenches; and
annealing the bulk substrate in an oxygen ambient under conditions sufficient to form the thermal oxide on sidewalls of the fins and filling the voids present within the trenches, wherein STI oxide and the thermal oxide form a STI region between each of the fins.
11. The method of claim 10 , wherein the trenches have a width of from about 5 nm to about 500 nm, and ranges therebetween, and a depth of from about 10 nm to about 1 μm, and ranges therebetween.
12. The method of claim 10 , wherein W initial is from about 5 nm to about 100 nm, and ranges therebetween.
13. The method of claim 10 , wherein the conditions sufficient to form the thermal oxide comprise a temperature of from about 750° C. to about 1,500° C., and ranges therebetween.
14. The method of claim 10 , wherein the conditions sufficient to form the thermal oxide comprise a duration of from about 10 seconds to about 10 hours, and ranges therebetween.
15. The method of claim 10 , further comprising the steps of:
recessing the STI oxide and the thermal oxide to expose the fins;
forming a gate over a portion of each of the fins that serve as a channel region of the fin device; and
forming source and drain regions on portion of the fins extending out from the gate.
16. The method of claim 1 , wherein the faceted shape comprises a (111) crystallographic plane at the base of each of the fins.