Light emitting devices with built-in chromaticity conversion and methods of manufacturing

1. A method for manufacturing a light emitting device, the method comprising:

forming a first semiconductor material, a second semiconductor material, and an active region therebetween, wherein the active region is configured to produce a first emission by electroluminescence;

forming a conversion material on the second semiconductor material, wherein the conversion material is configured to produce a second emission by photoluminescence;

forming laterally spaced apart gaps in the conversion material, wherein forming the gaps changes the second emission at different areas of the conversion material such that the light emitting device, in operation, produces light having different chromaticity values at the different areas of the conversion material; and

forming a transparent contact on the conversion material, wherein the transparent contact includes

a first portion on the conversion material, and

a second portion within the gaps, wherein the second portion of the transparent contact is directly coupled to the second semiconductor material.

2. The method of claim 1 wherein forming gaps in the conversion material includes forming channels in the conversion material.

3. The method of claim 1 wherein forming the conversion material includes forming a semiconductor superlattice.

4. The method of claim 1 wherein forming the conversion material includes forming multiple quantum wells.

5. The method of claim 1 wherein forming the conversion material includes forming an epitaxial bulk material and doping the epitaxial bulk material.

6. The method of claim 5 wherein forming the epitaxial bulk material includes forming epitaxial gallium nitride.

7. The method of claim 6 wherein doping the epitaxial bulk material includes doping the epitaxial bulk material with europium (Eu) and/or erbium (Er).

8. A light emitting device, comprising:

a first semiconductor material;

a second semiconductor material spaced apart from the first semiconductor material;

an active region between the first and second semiconductor materials, wherein the active region is configured to produce a first emission by electroluminescence;

a conversion material on the second semiconductor material, wherein the conversion material is configured to produce a second emission by photoluminescence, and wherein the conversion material includes a first region and a second region laterally spaced apart from the first region;

a plurality of first gaps at the first region of the conversion material, the first gaps having a first size;

a plurality of second gaps at the second region of the conversion material, the second gaps having a second size different than the first size; and

transparent or semitransparent material disposed within the first and second gaps.

9. The light emitting device of claim 8 wherein the transparent or semitransparent material is gaseous.

10. The light emitting device of claim 8 wherein the transparent or semitransparent material is liquid.

11. The light emitting device of claim 8 wherein the first and second gaps are channels.

12. The light emitting device of claim 8 , further comprising a transparent contact on the conversion material, wherein the transparent contact extends through the conversion material and into electrical contact with the second semiconductor material via the first and second gaps.

13. The light emitting device of claim 8 wherein the conversion material includes a semiconductor superlattice.

14. The light emitting device of claim 8 wherein the conversion material includes multiple quantum wells.

15. The light emitting device of claim 8 wherein the conversion material includes a doped epitaxial bulk material.

16. The light emitting device of claim 15 wherein the doped epitaxial bulk material is doped epitaxial gallium nitride.