Charged particle beam exposure apparatus suitable for drawing on line patterns, and exposure method using the same

1. A charged particle beam exposure apparatus configured to irradiate a substrate including a plurality of line patterns with a charged particle beam and to perform exposure of a pattern on any of the line patterns, comprising:

a stage unit capable of holding the substrate and moving the substrate at least in an extending direction of the line patterns;

a column unit configured to generate an array beam including a plurality of charged particle beams,

a blanker array included in the column unit and configured to turn each charged particle beam included in the array beam on or off based on a blanking operation signal; and

an exposure control unit configured to control a position of, the array beam in such a way as to retain the charged particle beams on the line patterns, and to control the blanker array in such a way as to turn each charged particle beam on and off at timing when the charged particle beam arrives at a pattern formation position,

wherein the exposure control unit acquires exposure data by segmenting an exposure region in a direction of movement of the substrate into a plurality of exposure ranges each with predetermined length and calculates the delay time by dividing a distance between the reference position and the pattern by a moving velocity of the stage unit.

2. The charged particle beam exposure apparatus according to claim 1 , further comprising:

a delay time arithmetic unit configured to calculate timing to turn each charged particle beam on and off based on delay time starting from a point of time when the array beam passes through a reference position set in the exposure region.

3. The charged particle beam exposure apparatus according to claim 2 , wherein the delay time arithmetic unit corrects the delay time of each charged particle beam included in the array beam based on tilt of the line patterns on the substrate and tilt of the array beam.

4. The charged particle beam exposure apparatus according to claim 3 , wherein the tilt of the line patterns is determined based on an alignment mark of a device chip disposed on the substrate.

5. The charged particle beam exposure apparatus according to claim 2 , wherein the delay time arithmetic unit corrects the delay time depending on an intensity of each charged particle beam included in the array beam.

6. The charged particle beam exposure apparatus according to claim 1 , further comprising:

a feedback deflector configured to correct an exposure position of the array beam; and

a deflection amount determination unit configured to calculate a deflection amount of the feedback deflector necessary to cause the exposure position of the array beam to follow the line patterns by using the feedback deflector.

7. The charged particle beam exposure apparatus according to claim 1 , further comprising:

a group of electromagnetic lenses included in the column unit and configured to adjust a focal position of the array beam; and

a lens drive unit configured to adjust the focal position and a turning angle of the array beam by combining drive signals to be applied to the group of electromagnetic lenses.

8. The charged particle beam exposure apparatus according to claim 1 , further comprising:

a gauge configured to detect an irradiated position of the array beam on the substrate.

9. The charged particle beam exposure apparatus according to claim 1 , comprising:

a plurality of the column units; and

a plurality of the exposure control units, wherein

the charged particle beam exposure apparatus performs exposure in parallel by using the plurality of the column units.

10. A charged particle beam exposure method to be performed by a charged particle beam exposure apparatus provided with

a stage unit configured to hold a substrate and to move the substrate in an extending direction of line patterns,

a column unit configured to generate an array beam including a plurality of charged particle beams arranged side by side in a direction intersecting the line patterns in order to irradiate the line patterns,

a blanker array included in the column unit and configured to turn each charged particle beam included in the array beam on or off based on a blanking operation signal, and

an exposure control unit configured to control components of the column units,

the method comprising:

causing the exposure control unit to control an exposure position of the array beam in such a way as to cause exposure positions of the charged particle beams included in the array beam to move on and along the line patterns,

causing the exposure control unit to turn each charged particle beam on and off at timing when the charged particle beam arrives at a pattern formation position,

causing the exposure control unit to acquire exposure data by segmenting an exposure region in a direction of movement of the substrate into a plurality of exposure ranges each with a predetermined length, and

causing the exposure control to calculate timing to turn each charged particle beam on and off based on delay time starting from a point of time when the array beam passes through a reference position set in the exposure region.

11. The charged particle beam exposure method according to claim 10 , further comprising:

causing the exposure control unit to calculate the delay time by dividing a distance between the reference position and a pattern by a moving velocity of the stage unit.

12. The charged particle beam exposure method according to claim 10 , further comprising:

causing the exposure control unit to correct the delay time of each charged particle beam included in the array beam based on tilt of the line pattern on the substrate and tilt of the array beam.

13. The charged particle beam exposure method according to claim 10 , further comprising:

causing the exposure control unit to correct the delay time depending on an intensity of each charged particle beam included in the array beam.