Heterogeneous annealing method and device
View Patent ↗A method of integrating a first substrate having a first surface with a first insulating material and a first contact structure with a second substrate having a second surface with a second insulating material and a second contact structure. The first insulating material is directly bonded to the second insulating material. A portion of the first substrate is removed to leave a remaining portion. A third substrate having a coefficient of thermal expansion (CTE) substantially the same as a CTE of the first substrate is bonded to the remaining portion. The bonded substrates are heated to facilitate electrical contact between the first and second contact structures. The third substrate is removed after heating to provided a bonded structure with reliable electrical contacts.
1. A method of integrating a first element having a first contact structure with a second element having a second contact structure, the method comprising:
non-adhesively bonding a front side of a first element with a first metal bonding structure directly to a front side of a second element with a second metal bonding structure;
thinning a back side of said first element;
attaching a third element to the thinned back side of the first element after the thinning;
heating the first, second, and third elements;
forming electrical connections between said first and second metal bonding structures; and
removing the third element.
2. The method of claim 1 , further comprising removing the third element after the heating.
3. The method of claim 1 , wherein the bonding comprises applying pressure using a clamp.
4. The method of claim 3 , further comprising placing the first and second elements in a flexible container.
5. The method of claim 4 , further comprising evacuating the flexible container.
6. The method of claim 4 , further comprising applying pressure to the flexible container.
7. The method of claim 1 , wherein the first and second metal bonding structures comprise nickel.
8. The method of claim 1 , wherein the second and third elements have substantially the same coefficient of thermal expansion (CTE).
9. The method of claim 8 , wherein the first element and the second element are made of different semiconductor materials.