Memory cells and methods of forming memory cells

1. A memory cell, comprising:

a first electrode comprising titanium;

an intermediate material over and directly against the first electrode, the intermediate material comprising stabilizing species corresponding to one or both of carbon and boron;

a switching material over and directly against the intermediate material;

an ion reservoir material over the switching material;

a second electrode over the ion reservoir material, the second electrode comprising tungsten; and

wherein the intermediate material comprises a gradient of stabilizing species concentration, with said concentration being lowest directly adjacent the first electrode and being highest directly adjacent the switching material.

2. The memory cell of claim 1 wherein the intermediate material comprises a thickness within a range of from greater than 0 angstroms to less than or equal to about 50 angstroms.

3. The memory cell of claim 1 wherein the intermediate material comprises a thickness within a range of from greater than or equal to about 10 angstroms to less than or equal to about 50 angstroms.

4. The memory cell of claim 1 wherein a surface of the intermediate material directly against the switching material comprises a total concentration of said stabilizing species of from about 15 atomic percent to about 100 atomic percent.

5. The memory cell of claim 1 wherein a surface of the intermediate material directly against the switching material comprises a total concentration of said stabilizing species of from about 90 atomic percent to about 100 atomic percent.

6. The memory cell of claim 1 wherein a surface of the intermediate material directly against the switching material comprises a total concentration of said stabilizing species of about 100 atomic percent.

7. The memory cell of claim 1 wherein:

a surface of the intermediate material directly against the switching material comprises a total concentration of said stabilizing species of from about 90 atomic percent to about 100 atomic percent; and

a surface of the intermediate material directly against the first electrode comprises a total concentration of said stabilizing species of from about 0 atomic percent to less than or equal to about 10 atomic percent.

8. The memory cell of claim 1 wherein the intermediate material comprises carbon.

9. The memory cell of claim 1 wherein the intermediate material comprises boron.

10. The memory cell of claim 1 wherein the intermediate material comprises carbon and boron.