Chemical Mechanical Polishing Slurry for Reducing Corrosion and Method of Use Therefor

1 . A tungsten chemical mechanical planarization (CMP) slurry comprising:

0.0 wt % to 30 wt % abrasive;

0.01 wt % to 5 wt % activator-containing particles;

peroxygen oxidizer;

0 to 10 wt % pH adjustor; and

the remaining being water;

wherein the tungsten CMP slurry has a pH in the range of 4 to 10.

2 . The CMP slurry of claim 1 , wherein the abrasive is selected from the group consisting of fumed silica, colloidal silica, alumina, gamma alumina, ceria, abrasive plastic or polymeric particles, spinels, zinc oxide, hybrid organic/inorganic particle, coated abrasive particles comprising of a core and a shell made up of different materials wherein the shell may be continuous or discontinuous, and combinations thereof.

3 . The CMP slurry of claim 1 , wherein the activator-containing particles are particles containing activators; wherein

the particles are selected from the group consisting of silica, alumina, zirconium oxide, ceria, polymers, mixed oxide particles, ceria coated silica particles, aluminum doped silica particles, and combinations thereof; and

the activators are metal-containing compounds having a metal selected from periodic table groups 1(b), 2(b), 3(b), 4(b), 5(b), 6(b), 7(b), and 8(b).

4 . The CMP slurry of claim 1 , wherein the pH adjustor is selected from the group consisting of acid, base, amine, and combinations thereof.

5 . The CMP slurry of claim 1 further comprises at least one additive selected from the group consisting of promoters, chelating agents, corrosion inhibitors, organic and/or inorganic acids, pH buffers, oxidizer stabilizers, passivating agents, surfactants, dispersants, polymers, biological preservatives, removal rate selectivity adjustors, film-forming anticorrosion agents, and polish enhancement agents.

6 . The CMP slurry of claim 1 comprises the abrasive selected from the group consisting of fumed silica, colloidal silica, and combinations thereof; the activator-containing particles comprise metal coated silica particles, wherein the metal is selected from the group consisting of iron, copper, cerium, nickel, manganese, cobalt, and combinations; the pH adjustor selected from the group consisting of ammonium hydroxide, nitric acid, phosphoric acid, sulfuric acid, and combinations thereof; and the pH is 5-9.

7 . A method for chemical mechanical planarization of a semiconductor substrate comprising at least one surface having tungsten, comprising the steps of:

contacting tungsten with a polishing pad;

delivering a polishing slurry to the at least one surface having tungsten, the polishing slurry comprising:

i. 0.0 wt % to 30 wt % abrasive;

ii. 0.01 to 5 wt % activator-containing particles;

iii. peroxygen oxidizer;

iv. 0 to 10 wt % pH adjustor; and

v. the remaining being water;

wherein the polishing slurry has a pH in the range of 4 to 10;

and

polishing the at least one surface having tungsten with the polishing slurry.

8 . The method of claim 7 , wherein the abrasive is selected from the group consisting of fumed silica, colloidal silica, alumina, gamma alumina, ceria, abrasive plastic or polymeric particles, spinels, zinc oxide, hybrid organic/inorganic particle, coated abrasive particles comprising of a core and a shell made up of different materials wherein the shell may be continuous or discontinuous, and combinations thereof.

9 . The method of claim 7 , wherein the activator-containing particles are particles containing activators; wherein

the particles are selected from the group consisting of silica, alumina, zirconium oxide, ceria, polymers, mixed oxide particles, ceria coated silica particles, aluminum doped silica particles, and combinations thereof; and

the activators are metal-containing compounds having a metal selected from periodic table groups 1(b), 2(b), 3(b), 4(b), 5(b), 6(b), 7(b), and 8(b).

10 . The method of claim 7 , wherein the pH adjustor is selected from the group consisting of acid, base, amine, and combinations thereof.

11 . The method of claim 7 , wherein the polishing slurry further comprises at least one additive selected from the group consisting of promoters, chelating agents, corrosion inhibitors, organic and/or inorganic acids, pH buffers, oxidizer stabilizers, passivating agents, surfactants, dispersants, polymers, biological preservatives, removal rate selectivity adjustors, film-forming anticorrosion agents, and polish enhancement agents.

12 . The method of claim 7 , wherein the polishing slurry comprises the abrasive selected from the group consisting of fumed silica, colloidal silica, and combinations thereof; the activator-containing particles comprise metal coated silica particles, wherein the metal is selected from the group consisting of iron, copper, cerium, nickel, manganese, cobalt, and combinations; the pH adjustor selected from the group consisting of ammonium hydroxide, nitric acid, phosphoric acid, sulfuric acid, and combinations thereof; and the pH is 5-9.

13 . The method of claim 7 , wherein the semiconductor substrate further comprises at least one surface having a dielectric material, and the method further comprising the steps of:

contacting the dielectric material with a polishing pad;

delivering the polishing slurry to the at least one surface having the dielectric material; and

polishing the at least one surface having dielectric material with the polishing slurry;

wherein a W/dielectric material Removal Selectivity is >100.

14 . The method of claim 13 , wherein the polishing slurry comprises the abrasive selected from the group consisting of fumed silica, colloidal silica, and combinations thereof; the activator-containing particles comprise metal coated silica particles, wherein the metal is selected from the group consisting of iron, copper, cerium, nickel, manganese, cobalt, and combinations; the pH adjustor selected from the group consisting of ammonium hydroxide, nitric acid, phosphoric acid, sulfuric acid, and combinations thereof; the dielectric material is TEOS, and the pH is 5-9.

15 . A system for chemical mechanical planarization (CMP), comprising:

a. a semiconductor substrate comprising at least one surface having tungsten;

b. a polishing pad; and

c. a polishing slurry comprising:

i. 0.0 wt % to 30 wt % abrasive;

ii. 0.01 to 5 wt % activator-containing particles;

iii. peroxygen oxidizer;

iv. 0 to 10 wt % pH adjustor; and

v. the remaining being water;

wherein the polishing slurry has a pH in the range of 4 to 10;

and

wherein the at least one surface having tungsten is in contact with the polishing pad and the polishing slurry.

16 . The system of claim 15 , wherein the abrasive is selected from the group consisting of fumed silica, colloidal silica, alumina, gamma alumina, ceria, abrasive plastic or polymeric particles, spinels, zinc oxide, hybrid organic/inorganic particle, coated abrasive particles comprising of a core and a shell made up of different materials wherein the shell may be continuous or discontinuous, and combinations thereof.

17 . The system of claim 15 , wherein the activator-containing particles are particles containing activators; wherein

the particles are selected from the group consisting of silica, alumina, zirconium oxide, ceria, polymers, mixed oxide particles, ceria coated silica particles, aluminum doped silica particles, and combinations thereof; and

the activators are metal-containing compounds having a metal selected from periodic table groups 1(b), 2(b), 3(b), 4(b), 5(b), 6(b), 7(b), and 8(b).

18 . The system of claim 15 , wherein the pH adjustor is selected from the group consisting of acid, base, amine, and combinations thereof.

19 . The system of claim 15 , wherein the polishing slurry further comprises at least one additive selected from the group consisting of promoters, chelating agents, corrosion inhibitors, organic and/or inorganic acids, pH buffers, oxidizer stabilizers, passivating agents, surfactants, dispersants, polymers, biological preservatives, removal rate selectivity adjustors, film-forming anticorrosion agents, and polish enhancement agents.

20 . The system of claim 15 , wherein the polishing slurry comprises the abrasive selected from the group consisting of fumed silica, colloidal silica, and combinations thereof; the activator-containing particles comprise metal coated silica particles, wherein the metal is selected from the group consisting of iron, copper, cerium, nickel, manganese, cobalt, and combinations; the pH adjustor selected from the group consisting of ammonium hydroxide, nitric acid, phosphoric acid, sulfuric acid, and combinations thereof; and the pH is 5-9.

21 . The system of claim 19 , wherein the semiconductor substrate further comprises at least one surface having a dielectric material, and the at least one surface having the dielectric material is in contact with the polishing pad and the polishing slurry; and

wherein the system provides a W/dielectric material Removal Selectivity>100.

22 . The system of claim 21 , wherein the polishing slurry comprises the abrasive selected from the group consisting of fumed silica, colloidal silica, and combinations thereof; the metal coated silica particles, wherein the metal is selected from the group consisting of iron, copper, cerium, nickel, manganese, cobalt, and combinations; the pH adjustor selected from the group consisting of ammonium hydroxide, nitric acid, phosphoric acid, sulfuric acid, and combinations thereof; the dielectric material is TEOS, and the pH is 5-9.