Method for manufacturing through-hole silicon via
A method for manufacturing a through-hole silicon via (TSV) employs the conventional trench insulation process to readily manufacture a through-hole silicon via (TSV) with achievement of an effective electrical insulation between the through-hole silicon via (TSV) and the silicon.
1. A method for manufacturing a TSV (through-hole silicon via) comprising:
forming a trench-type element isolation film on a first wafer having a front side and a backside opposite to the front side using a trench-type element isolation process to define a portion of the first wafer, wherein the trench-type isolation film is formed on the front side;
thinning the backside of the first wafer until the trench-type element isolation film is exposed through the backside of the first wafer;
removing the portion of the first wafer through a patterning and an etching process on the backside of the first wafer; and
forming the TSV by filling a conductive material in the trench-type element isolation film through the backside of the first wafer where the portion of the first wafer is removed.
2. The method for manufacturing the TSV of claim 1 , wherein a cross section shape of the TSV is a circle shape or a polygonal shape.
3. The method for manufacturing the TSV of claim 1 , wherein after thinning, when a thickness of the backside is within 10 micrometers, the TSV will have a smaller size based on aspect ratio than when the thickness of the backside is outside 10 micrometers.
4. The method for manufacturing the TSV of claim 1 , wherein an aspect ratio of the TSV is ranged from 1 to 1000.
5. The method for manufacturing the TSV of claim 1 , wherein in the forming of the trench-type element isolation film, a conductive material is filled in the trench-type element isolation film using an ozone-TEOS (TetraEthyl OrthoSilicate), TEOS, a HDP (High Density Plasma), a SOG (Spin On Glass) or poly.
6. The method for manufacturing the TSV of claim 1 , wherein the removing of the semiconductor material in the trench-type element isolation film is performed by a dry etching process or a wet etching process.
7. The method for manufacturing the TSV of claim 1 , wherein the forming of the trench-type element isolation film is performed through a deep trench-type element isolation process or a shallow trench-type element isolation process.
8. The method for manufacturing the TSV of claim 1 , wherein the forming of the TSV is performed by filling a conductive material or a semiconductor material in the trench-type element isolation film.
9. The method for manufacturing the TSV of claim 8 , wherein the forming of the TSV further comprises performing a planarizing process after the forming of the TSV is performed by filling a conductive material or a semiconductor material in the trench-type element isolation film.
10. A method for manufacturing a TSV (through-hole silicon via) comprising:
forming a trench-type element isolation film on a first wafer having a front side and a backside opposite to the front side using a trench-type element isolation process to define a portion of the first wafer, wherein the trench-type isolation film is formed on the front side;
removing the portion of the first wafer through a patterning and an etching process on the front side of the first wafer; and
forming the TSV by filling a conductive material in the trench-type element isolation film through the front side of the first wafer where the portion of the first wafer is removed; and
thinning the backside of the first wafer until the trench-type element isolation film is exposed.
11. The method for manufacturing the TSV of claim 10 , wherein a cross section shape of the TSV is a circle shape or a polygonal shape.
12. The method for manufacturing the TSV of claim 10 , wherein an aspect ratio of the trench-type element isolation film is ranged from 1 to 1000.
13. The method for manufacturing the TSV of claim 10 , wherein an aspect ratio of the TSV is ranged from 1 to 1000.
14. A method for manufacturing a TSV (through-hole silicon via) comprising:
forming a trench-type element isolation film on a first wafer having a front side and a backside opposite to the front side using a trench-type element isolation process to define a portion of the first wafer, wherein the trench-type isolation film is formed on the front side;
bonding a second wafer on an upper portion of the trench-type element isolation film of the first wafer;
thinning the backside of the first wafer until the trench-type element isolation film is exposed;
removing the portion of the first wafer through a patterning and an etching process on the backside of the first wafer; and
forming the TSV by filling a conductive material in the trench-type element isolation film through the backside of the first wafer where the portion of the first wafer is removed.
15. The method for manufacturing the TSV of claim 14 , wherein a cross section shape of the TSV is a circle shape or a polygonal shape.
16. The method for manufacturing the TSV of claim 14 , wherein an aspect ratio of the trench-type element isolation film is ranged from 1 to 1000.
17. The method for manufacturing the TSV of claim 14 , wherein an aspect ratio of the TSV is ranged from 1 to 1000.
18. A method for manufacturing a TSV (through-hole silicon via) comprising:
forming a trench-type element isolation film on a first wafer having a front side and a backside opposite to the front side using a trench-type element isolation process to define a portion of the first wafer, wherein the trench-type isolation film is formed on the front side;
removing the portion of the first wafer through a patterning and an etching process on the front side of the first wafer; and
forming the TSV by filling a conductive material in the trench-type element isolation film through the front side of the first wafer where the portion of the first wafer is removed;
bonding a second wafer on an upper portion of the TSV of the first wafer; and
thinning the backside of the first wafer until the trench-type element isolation film is exposed.
19. The method for manufacturing the TSV of claim 18 , wherein a cross section shape of the TSV is a circle shape or a polygonal shape.
20. The method for manufacturing the TSV of claim 18 , wherein an aspect ratio of the trench-type element isolation film is ranged from 1 to 1000.