Sputtering target and method for production thereof
View Patent ↗A sputtering target according to the disclosure includes 5 wtppm to 10,000 wtppm of Cu and the balance of In and has a relative density of 99% or more and an average grain size of 3,000 μm or less.
1. A sputtering target comprising:
5 wtppm to 10,000 wtppm of Cu; and
the balance of In,
the sputtering target having a relative density of at least 99%, an average grain size of at most 3,000 μm and an oxygen concentration of at most 20 wtppm.
2. The sputtering target according to claim 1 , wherein the average grain size is from 10 μm to 1,000 μm.
3. The sputtering target according to claim 2 , wherein the average grain size is from 10 μm to 500 μm.
4. The sputtering target according to claim 3 , wherein the average grain size is from 10 μm to 300 μm.
5. The sputtering target according to claim 1 , further comprising at most 100 wtppm of at least one selected from S, Cd, Zn, Se, Mg, Ca, and Sn.
6. The sputtering target according to claim 1 , which has a cylindrical shape.
7. A method for producing the sputtering target according to claim 1 , the method comprising:
forming a sputtering target raw material in such a manner that the sputtering target raw material is bonded to a surface of a supporting substrate, wherein the sputtering target raw material comprises 5 wtppm to 10,000 wtppm of Cu and the balance of In; and
then subjecting the sputtering target raw material to plastic working in a thickness direction of the sputtering target raw material at a thickness reduction rate in the range of 10% to 80%.
8. The method for producing a sputtering target according to claim 7 , wherein the sputtering target raw material further comprises at most 100 wtppm, in total, of at least one selected from S, Cd, Zn, Se, Mg, Ca, and Sn.
9. The method for producing a sputtering target according to claim 7 , wherein the supporting substrate is a cylindrical backing tube on which a cylindrical sputtering target is produced.
10. The method for producing a sputtering target according to claim 7 , wherein the sputtering target raw material is formed by casting a molten metal.
11. The method for producing a sputtering target according to claim 10 , wherein the molten metal is stirred or agitated during the casting.
12. The method for producing a sputtering target according to claim 10 , wherein the casting is performed under a nitrogen or Ar atmosphere.