Silicon implantation in substrates and provision of silicon precursor compositions therefor
Compositions, systems, and methods are described for implanting silicon and/or silicon ions in a substrate, involving generation of silicon and/or silicon ions from corresponding silicon precursor compositions, and implantation of the silicon and/or silicon ions in the substrate.
1. A gas mixture for ion implantation of silicon and/or silicon ions, consisting of silicon tetrafluoride and hydrogen, wherein the amount of hydrogen in the gas mixture is between 0.01% to 30% by volume, based on total volume of silicon tetrafluoride and hydrogen.
2. The gas mixture of claim 1 , wherein the amount of hydrogen in the gas mixture is between 2% to 20% by volume, based on total volume of silicon tetrafluoride and hydrogen.
3. The gas mixture of claim 1 , as provided in a gas supply vessel.
4. The gas mixture of claim 1 , wherein the silicon tetrafluoride is isotopically enriched above natural abundance in at least one isotope of silicon.
5. A method of implanting silicon and/or silicon ions in a substrate, comprising ionizing silicon tetrafluoride in a gas mixture consisting of silicon tetrafluoride and hydrogen, and implanting silicon and/or silicon ions from said ionizing in the substrate, wherein the amount of hydrogen in the gas mixture is between 0.01% to 30% by volume, based on total volume of silicon tetrafluoride and hydrogen.
6. The method of claim 5 , wherein the amount of hydrogen in the gas mixture is between 2% to 20% by volume, based on total volume of silicon tetrafluoride and hydrogen.
7. The method of claim 5 , wherein the silicon tetrafluoride is isotopically enriched above natural abundance in at least one isotope of silicon.