Silicon-based films and methods of forming the same
View Patent ↗Disclosed herein are containing silicon-based films and compositions and methods for forming the same. The silicon-based films contain <50 atomic % of silicon. In one aspect, the silicon-based films have a composition Si x C y N z wherein x is about 0 to about 55, y is about 35 to about 100, and z is about 0 to about 50 atomic weight (wt.) percent (%) as measured by XPS. In another aspect, the silicon-based films were deposited using at least one organosilicon precursor comprising two silicon atoms, at least one Si-Me group, and an ethylene or propylene linkage between the silicon atoms such as 1,4-disilapentane.
1. A composition for vapor deposition of a silicon-based film, the composition comprising at least one organosilicon precursor compound having the chemical structure of Formula A:
wherein
X 1 is an organoamino group having the formula NR 1 R 2 wherein
R 1 is selected from the group consisting of a linear C 1 to C 10 alkyl group, a branched C 3 to C 10 alkyl group, a cyclic C 3 to C 10 alkyl group, a linear or branched C 3 to C 10 alkenyl group, a linear or branched C 3 to C 10 alkynyl group, a C 1 to C 6 dialkylamino group, an electron withdrawing group, and a C 6 to C 10 aryl group; and
R 2 is selected from the group consisting of a hydrogen atom, a linear C 1 to C 10 alkyl group, a branched C 3 to C 10 alkyl group, a cyclic C 3 to C 10 alkyl group, a linear or branched C 3 to C 6 alkenyl group, a linear or branched C 3 to C 6 alkynyl group, a C 1 to C 6 dialkylamino group, a C 6 to C 10 aryl group, a linear C 1 to C 6 fluorinated alkyl group, a branched C 3 to C 6 fluorinated alkyl group, an electron withdrawing group, and a C 4 to C 10 aryl group and, optionally, wherein R 1 and R 2 are linked together to form a ring selected from a substituted or unsubstituted aromatic ring or a substituted or unsubstituted aliphatic ring;
R 3 , R 4 , and R 5 are each a hydrogen atom; and X 2 is hydrogen.
2. The composition of claim 1 wherein the organosilicon precursor comprises 1-di-iso-propylamino-1,4-disilapentane.
3. The composition of claim 1 further comprising a nitrogen-containing precursor and wherein a ratio of the amount of the nitrogen-containing precursor to the amount of the at least one organosilicon precursor ranges from about 0.25 to about 1.
4. The composition of claim 1 wherein the at least one silicon precursor comprises 1,4-disilapentane.
5. The composition of claim 1 wherein the at least one silicon precursor comprises at least one silicon precursor selected from the group consisting of dimethylamino-1,4-disilapentane, 1-diethylamino-1,4-disilapentane, 1-methylethylamino-1,4-disilapentane, 1-di-n-propylamino-1,4-disilapentane, 1-di-iso-propylamino-1,4-disilapentane, 1-iso-propylamino-1,4-disilapentane, 1-sec-butylamino-1,4-disilapentane, 1-tert-butylamino-1,4-disilapentane, 1-(2,6-dimethylpiperidino)-1,4-disilapentane, 1-piperidino-1,4-disilapentane, 1-(cyclohexyl-iso-propylamino)-1,4-disilapentane, and 1-(n-propyl-iso-propylamino)-1,4-disilapentane.