Semiconductor device and method for manufacturing the same
By using a conductive layer including Cu as a long lead wiring, increase in wiring resistance is suppressed. Further, the conductive layer including Cu is provided in such a manner that it does not overlap with the oxide semiconductor layer in which a channel region of a TFT is formed, and is surrounded by insulating layers including silicon nitride, whereby diffusion of Cu can be prevented; thus, a highly reliable semiconductor device can be manufactured. Specifically, a display device which is one embodiment of a semiconductor device can have high display quality and operate stably even when the size or definition thereof is increased.
1. A semiconductor device comprising:
a first conductive layer and a capacitor wiring over a substrate, wherein each of the first conductive layer and the capacitor wiring contains copper;
a first insulating layer over the first conductive layer and the capacitor wiring, wherein the first insulating layer contains nitrogen;
a second insulating layer over the first insulating layer, wherein the second insulating layer contains oxygen;
an oxide semiconductor layer over the second insulating layer;
a third insulating layer over the oxide semiconductor layer;
an opening in the third insulating layer;
a second conductive layer over the third insulating layer, wherein the second conductive layer is electrically connected to the oxide semiconductor layer through the opening, and wherein the second conductive layer contains at least one selected from the group consisting of W, Ta, Mo, Ti and Cr;
a third conductive layer over the second conductive layer, wherein the third conductive layer is electrically connected to the oxide semiconductor layer, wherein the third conductive layer contains copper; and
a fourth conductive layer electrically connected to the oxide semiconductor layer, wherein the fourth conductive layer contains a transparent conductive material, and wherein the fourth conductive layer overlaps the capacitor wiring.
2. The semiconductor device according to claim 1 , wherein the first conductive layer further comprises at least one element selected the group consisting of tungsten, tantalum, molybdenum, titanium, chromium, zirconium, and calcium.
3. The semiconductor device according to claim 1 , wherein the oxide semiconductor layer comprises at least one of indium, gallium, and zinc.
4. The semiconductor device according to claim 1 , wherein the third conductive layer further comprises at least one element selected from the group consisting of tungsten, tantalum, molybdenum, titanium, chromium, zirconium, and calcium.
5. The semiconductor device according to claim 1 , wherein the first conductive layer is not overlapped with the oxide semiconductor layer.
6. The semiconductor device according to claim 1 , wherein the semiconductor device is incorporated in one selected from the group consisting of electronic paper, an advertisement, an electronic book reader, a television set, a digital photo frame, a portable amusement machine, a slot machine, a portable computer, and a cellular phone.
7. A semiconductor device comprising:
a first conductive layer and a capacitor wiring over a substrate, wherein each of the first conductive layer and the capacitor wiring contains copper, and wherein each of the first conductive layer and the capacitor wiring has a tapered side surface;
a first insulating layer over the first conductive layer and the capacitor wiring, wherein the first insulating layer contains nitrogen;
a second insulating layer over the first insulating layer, wherein the second insulating layer contains oxygen;
an oxide semiconductor layer over the second insulating layer;
a third insulating layer over the oxide semiconductor layer;
an opening in the third insulating layer;
a second conductive layer over the third insulating layer, wherein the second conductive layer is electrically connected to the oxide semiconductor layer through the opening, and wherein the second conductive layer contains at least one selected from the group consisting of W, Ta, Mo, Ti and Cr;
a third conductive layer over the second conductive layer, wherein the third conductive layer is electrically connected to the oxide semiconductor layer, wherein the third conductive layer contains copper; and
a fourth conductive layer electrically connected to the oxide semiconductor layer, wherein the fourth conductive layer contains a transparent conductive material, and wherein the fourth conductive layer overlaps the capacitor wiring.
8. The semiconductor device according to claim 7 , wherein the first conductive layer further comprises at least one element selected the group consisting of tungsten, tantalum, molybdenum, titanium, chromium, zirconium, and calcium.
9. The semiconductor device according to claim 7 , wherein the oxide semiconductor layer comprises at least one of indium, gallium, and zinc.
10. The semiconductor device according to claim 7 , wherein the third conductive layer further comprises at least one element selected from the group consisting of tungsten, tantalum, molybdenum, titanium, chromium, zirconium, and calcium.
11. The semiconductor device according to claim 7 , wherein the first conductive layer is not overlapped with the oxide semiconductor layer.
12. The semiconductor device according to claim 7 , wherein the semiconductor device is incorporated in one selected from the group consisting of electronic paper, an advertisement, an electronic book reader, a television set, a digital photo frame, a portable amusement machine, a slot machine, a portable computer, and a cellular phone.