Method of making a multicomponent film
View Patent ↗Described herein is a method and precursor composition for depositing a multicomponent film. In one embodiment, the method and composition described herein is used to deposit a germanium-containing film such as Germanium Tellurium, Antimony Germanium, and Germanium Antimony Tellurium (GST) films via an atomic layer deposition (ALD) and/or other germanium, tellurium and selenium based metal compounds for phase change memory and photovoltaic devices. In this or other embodiments, the Ge precursor used trichlorogermane.
1. A method for depositing a germanium-containing film onto at least a portion of a substrate, the method comprising steps of:
a. providing the substrate into a reactor; and
b. introducing into the reactor a germanium precursor comprising HGeCI 3 under deposition conditions sufficient for the germanium precursor to react with the substrate and provide the germanium-containing film.
2. The method of claim 1 further comprising introducing a nitrogen source into the reactor wherein the nitrogen source reacts to provide a germanium-containing film.
3. The method of claim 2 wherein the nitrogen source is at least one selected from the group consisting of ammonia, ammonia plasma, a plasma comprising nitrogen and hydrogen, nitrogen plasma, and combinations thereof.
4. The method of claim 3 wherein the nitrogen source is ammonia.