Method for making semiconductor devices including reactant treatment of residual surface portion
A method for making semiconductor devices may include forming a phosphosilicate glass (PSG) layer on a semiconductor wafer, with the PSG layer having a phosphine residual surface portion. The method may further include exposing the phosphine residual surface portion to a reactant plasma to integrate at least some of the phosphine residual surface portion into the PSG layer. The method may additionally include forming a mask layer on the PSG layer after the exposing.
1. A method for making semiconductor devices comprising:
forming a dielectric layer on a semiconductor wafer within a chamber, the dielectric layer having a residual surface contamination portion on a top surface of the dielectric layer opposite the semiconductor wafer;
exposing the residual surface contamination portion to a reactant plasma to integrate at least some of the residual surface contamination portion from the top surface into the dielectric layer and without removing the semiconductor wafer from the chamber; and
forming a mask layer on the dielectric layer after the exposing and without subjecting the dielectric layer to an intervening chemical cleaning operation and without removing the semiconductor wafer from the chamber.
2. The method according to claim 1 wherein the reactant plasma comprises oxygen.
3. The method according to claim 1 wherein forming the dielectric layer comprises deposition at a first radio frequency (RF) power; and wherein exposing the residual surface portion to the reactant plasma is at a second RF power less than the first RF power.
4. The method according to claim 1 wherein the chamber comprises a radio frequency (RF) plasma chamber.
5. The method according to claim 1 wherein exposing of the residual surface portion is performed at a pressure in a range of 3 to 5 Torr.
6. The method according to claim 1 wherein forming the dielectric layer and exposing the residual surface portion are performed at a temperature in a range of 300 to 500° C.
7. The method according to claim 1 wherein forming the dielectric layer and exposing the residual surface portion are performed with an N 2 O flow rate in a range of 1000-1200 scc.
8. A method for making semiconductor devices comprising:
forming a dielectric layer on a semiconductor wafer within a plasma processing chamber, the dielectric layer having a residual surface contamination portion on a top surface of the dielectric layer opposite the semiconductor wafer;
exposing the residual surface contamination portion to a reactant plasma to integrate at least some of the residual surface contamination portion from the top surface into the dielectric layer and without removing the semiconductor wafer from the plasma processing chamber; and
forming a mask layer on the dielectric layer after the exposing and without subjecting the dielectric layer to an intervening chemical cleaning and without removing the semiconductor wafer from the plasma processing chamber.
9. The method according to claim 8 wherein the reactant plasma comprises oxygen.
10. The method according to claim 8 wherein forming the dielectric layer comprises deposition at a first power; and wherein exposing the residual surface portion to the reactant plasma is at a second power less than the first power.
11. The method according to claim 8 wherein exposing of the residual surface portion is performed at a pressure in a range of 3 to 5 Torr.
12. The method according to claim 8 wherein forming the dielectric layer and exposing the residual surface portion are performed at a temperature in a range of 300 to 500° C.
13. The method according to claim 8 wherein forming the dielectric layer and exposing the residual surface portion are performed with an N 2 O flow rate in a range of 1000-1200 scc.
14. A method for making semiconductor devices comprising:
forming a dielectric layer on a semiconductor wafer within a plasma processing chamber, the dielectric layer having a residual surface contamination portion on a top surface of the dielectric layer opposite the semiconductor wafer;
exposing the residual surface contamination portion to a reactant oxygen plasma to integrate at least some of the residual surface contamination portion from the top surface into the dielectric layer and without removing the semiconductor wafer from the plasma processing chamber; and
forming a mask layer on the dielectric layer after the exposing and without subjecting the dielectric layer to an intervening chemical cleaning and without removing the semiconductor wafer from the plasma processing chamber.
15. The method according to claim 14 wherein forming the dielectric layer comprises deposition at a first power; and wherein exposing the residual surface portion to the reactant plasma is at a second power less than the first power.
16. The method according to claim 14 wherein exposing of the residual surface portion is performed at a pressure in a range of 3 to 5 Torr.
17. The method according to claim 14 wherein forming the dielectric layer and exposing the residual surface portion are performed at a temperature in a range of 300 to 500° C.
18. The method according to claim 14 wherein forming the dielectric layer and exposing the residual surface portion are performed with an N 2 O flow rate in a range of 1000-1200 scc.