Semiconductor device and method of manufacturing the same

1. A semiconductor device comprising:

a semiconductor substrate having a main surface;

a first coil formed on the main surface;

a first insulating film formed over the first coil and having a first main surface;

a second insulating film formed on the first main surface of the first insulating film and having a second main surface;

a second coil formed on the second main surface of the second insulating film,

wherein the first main surface of the first insulating film has a first area on which the second insulating film is formed, and has a second area without the first area in a plan view, and

wherein the second insulating film is surrounded by the second area in the plan view,

the main surface of the semiconductor having a fifth area on which the first insulating film is formed, a sixth area surrounding the fifth area, and a seventh area between the fifth area and the sixth area;

a fourth insulating film formed on the sixth area,

wherein the first insulating film is surrounding by the seventh area of the main surface of the semiconductor substrate in the plan view, and

wherein the first insulating film is surrounded by the fourth insulating film in the plan view; and

a first opening formed on a third insulating film formed over the second coil, and

a second opening formed on the fourth insulating film,

wherein a surface of a first electrode pad is exposed in the first opening, and

wherein a surface of a second electrode pad is exposed in the second opening.

2. The semiconductor device according to claim 1 ,

wherein the first insulating film and the second insulating film comprise organic insulating films.

3. The semiconductor device according to claim 1 , further comprising:

a third insulating film formed over the second coil,

wherein the second main surface of the second insulating film has a third area on which the third insulating film is formed and has a fourth area without the third area in a plan view, and

wherein the third insulating film is surrounded with the fourth area in the plan view.

4. The semiconductor device according to claim 1 ,

wherein the second coil overlaps the first coil in the plan view.

5. The semiconductor device according to claim 1 , further comprising:

a fifth insulating film formed between the main surface of the semiconductor substrate and the first insulating film in a cross-sectional view,

wherein the first coil is covered with the fifth insulating film in the cross-sectional view, and

wherein the first and fourth insulating films are formed on the fifth insulating film in the cross-sectional view.

6. The semiconductor device according to claim 3 ,

wherein the third insulating film comprises an organic insulating film.

7. The semiconductor device according to claim 5 ,

wherein the fourth and fifth insulating films comprise organic insulating films.

8. A semiconductor device comprising:

a semiconductor substrate;

a first inductor formed on the semiconductor substrate;

a first insulating film formed over the first inductor and including a first surface;

a second insulating film formed on the first surface of the first insulating film and including a second surface;

a second inductor formed on the second surface of the second insulating film,

wherein the first surface of the first insulating film includes a first area on which the second insulating film is formed, and includes a second area void of the first area in a plan view, and

wherein the second insulating film is surrounded by the second area in the plan view,

the semiconductor substrate comprising a fifth area on which the first insulating film is formed, a sixth area surrounding the fifth area, and a seventh area between the fifth area and the sixth area;

a fourth insulating film formed on the sixth area,

wherein the first insulating film is surrounding by the seventh area of the semiconductor substrate in the plan view, and

wherein the first insulating film is surrounded by the fourth insulating film in the plan view; and

a first opening formed on a third insulating film formed over the second inductor, and

a second opening formed on the fourth insulating film,

wherein a surface of a first electrode pad is exposed in the first opening, and

wherein a surface of a second electrode pad is exposed in the second opening.

9. The semiconductor device according to claim 8 ,

wherein the first insulating film and the second insulating film comprise organic insulating films.

10. The semiconductor device according to claim 8 , further comprising:

a third insulating film formed over the second inductor,

wherein the second surface of the second insulating film includes a third area on which the third insulating film is formed and has a fourth area without the third area in a plan view, and

wherein the third insulating film is surrounded with the fourth area in the plan view.

11. The semiconductor device according to claim 8 ,

wherein a groove is formed between the second insulating film and the fourth insulating film in a cross-sectional view, and

wherein the second insulating film is surrounded by the groove in the plan view.

12. The semiconductor device according to claim 8 ,

wherein the second inductor overlaps the first inductor in the plan view.

13. The semiconductor device according to claim 8 , further comprising:

a fifth insulating film formed between the semiconductor substrate and the first insulating film in a cross-sectional view,

wherein the first inductor is covered with the fifth insulating film in the cross-sectional view, and

wherein the first and fourth insulating films are formed on the fifth insulating film in the cross-sectional view.

14. The semiconductor device according to claim 10 ,

wherein the third insulating film comprises an organic insulating film.

15. The semiconductor device according to claim 13 ,

wherein the fourth and fifth insulating films comprise organic insulating films.