PVDF pyrolyzate adsorbent and gas storage and dispensing system utilizing same
View Patent ↗A polyvinylidene fluoride (PVDF) pyrolyzate adsorbent is described, having utility for storing gases in an adsorbed state, and from which adsorbed gas may be desorbed to supply same for use. The PVDF pyrolyzate adsorbent can be of monolithic unitary form, or in a bead, powder, film, particulate or other finely divided form. The adsorbent is particularly suited for storage and supply of fluorine-containing gases, such as fluorine gas, nitrogen trifluoride, carbo-fluoride gases, and the like. The adsorbent may be utilized in a gas storage and dispensing system, in which the adsorbent is contained in a supply vessel, from which sorbate gas can be selectively dispensed.
1. A polyvinylidene fluoride (PVDF) pyrolyzate carbon adsorbent comprising residual fluorine therein deriving from the polyvinylidene fluoride.
2. The carbon adsorbent of claim 1 , produced by pyrolysis at temperature insufficient to pyrolytically remove all fluorine from the polyvinylidene fluoride of which the carbon adsorbent is a pyrolyzate.
3. The carbon adsorbent of claim 1 , produced by pyrolysis conducted at temperature in a range of from 400° C. to 600° C.
4. The carbon adsorbent of claim 1 , of monolithic form.
5. The carbon adsorbent of claim 1 , of particulate form.
6. The carbon adsorbent of claim 5 , of a bead or powder particulate form.
7. The carbon adsorbent of claim 1 , comprising porosity including pores of size in a range of from 0.2 to 5 nm.
8. The carbon adsorbent of claim 1 , comprising porosity at least 30% of which comprises pores having size in a range of from 0.3 to 0.72 nm.
9. The carbon adsorbent of claim 1 , comprising porosity at least 50% which comprises pores having a diameter of less than 2 nm.
10. The carbon adsorbent of claim 1 , having a bulk density in a range of from 0.6 to 1.8 g/cm 3 .
11. The carbon adsorbent of claim 1 , having fluorine permeability in a range of from 100 to 600 cm 3 /psi/cm 2 /min.
12. The carbon adsorbent of claim 1 , comprising porosity at least 30% of which comprises pores having size in a range of from 0.3 to 0.72, and at least 50% which comprises pores having a diameter of less than 2, the carbon adsorbent having a bulk density in a range of from 0.6 to 1.8 g/cm 3 and fluorine permeability in a range of from 100 to 600 cm 3 /psi/cm 2 /min.
13. A method of gas handling, comprising adsorbing a sorbable gas on a carbon adsorbent according to claim 1 .
14. A method of gas handling, comprising adsorbing a sorbable gas on a polyvinylidene fluoride (PVDF) pyrolyzate carbon adsorbent comprising residual fluorine therein deriving from the polyvinylidene fluoride, wherein the sorbable gas comprises a fluorine-containing gas.
15. The method of claim 13 , wherein the sorbable gas comprises a fluorine-containing gas selected from the group consisting of boron trifluoride, nitrogen trifluoride, fluorine, hydrogen fluoride, diboron tetrafluoride, and carbofluoride compounds.
16. The method of claim 13 , wherein the sorbable gas comprises fluorine gas.
17. A method of gas handling, comprising desorbing from a carbon adsorbent according to claim 1 a gas previously adsorbed thereon.
18. A method of gas handling, comprising desorbing from a polyvinylidene fluoride (PVDF) pyrolyzate carbon adsorbent comprising residual fluorine therein deriving from the polyvinylidene fluoride, a gas previously adsorbed on said adsorbent, wherein the previously adsorbed gas comprises a fluorine-containing gas.
19. The method of claim 17 , wherein the previously adsorbed gas comprises a fluorine-containing gas selected from the group consisting of boron trifluoride, nitrogen trifluoride, fluorine, hydrogen fluoride, diboron tetrafluoride, and carbofluoride compounds.
20. The method of claim 17 , wherein the previously adsorbed gas comprises fluorine gas.
21. The method of claim 17 , further comprising utilizing the desorbed gas in a process for manufacturing a semiconductor, flat-panel display, or solar product.
22. The method of claim 17 , further comprising utilizing the desorbed gas for cleaning a semiconductor manufacturing apparatus.