Elongated pad structure
View Patent ↗A 3DIC includes a die and a substrate. The die includes multiple bumps to provide electrical connection the substrate. The substrate includes multiple elongated contact pads. The elongated contact pads making electrical contact with the bumps and shaped to maintain alignment with the bumps over a temperature range.
1. A 3DIC comprising:
a die, the die having a plurality of bumps; and
a substrate having a plurality of elongated contact pads, the elongated contact pads making electrical contact with the bumps and shaped to maintain alignment with the bumps over a temperature range, wherein the elongated contact pads are elongated towards a center of the substrate, the elongated contact pads having an oval shape with an axis of symmetry in a radial direction from the center of the substrate, wherein a curvature of the elongated contact pad at a proximal end closer to the center of the substrate is larger than a curvature of the elongated contact pad at a distal end further away from the center of the substrate.
2. The 3DIC of claim 1 , wherein the first temperature is room temperature and the second temperature is a solder reflux temperature.
3. The 3DIC of claim 1 , wherein the substrate has a coefficient of thermal expansion at least 10 times larger than silicon.
4. The 3DIC of claim 1 , wherein the plurality of elongated pads are elongated radially from a central point.
5. The 3DIC of claim 1 , wherein elongated pads closer to the central point have a smaller area than elongated pads further from the central point.
6. The 3DIC of claim 1 , wherein elongated pads further from the central point have a larger elongation than elongated pads closer to the central point.
7. The 3DIC of claim 1 , wherein the central point is located in a center of the substrate.
8. The 3DIC of claim 1 , wherein the elongated contact pads have an oval shape.
9. The 3DIC of claim 8 , wherein a first end of the elongated contact pads are aligned to the plurality of corresponding bumps of the die at a first temperature, and wherein a second end of the elongated contact pads are aligned to the plurality of corresponding bumps of the die at a second temperature.
10. The 3DIC of claim 1 , wherein the elongated contact pads have a circular shape.
11. The 3DIC of claim 10 , wherein the radius of the circularly shaped elongated pad is based on a distance between a location of the elongated pad and a central point.
12. The 3DIC of claim 1 , wherein the substrate is an organic interposer.
13. The 3DIC of claim 1 , wherein the die is a silicon interposer.
14. The 3DIC of claim 1 , wherein the die is an active die.