IP Library › Granted Patent US 10,295,881
Granted Patent B2
US 10,295,881 · App. 14/964,864 · Granted May 21, 2019

Synaptic electronic devices with electrochromic device

Inventor: Shu-Jen Han (Cortlandt Manor, NY)
Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
G02F1/157G02F1/155G02F1/1508G02F1/1525G02F1/1533G02F1/163G06N3/0675H01L31/02327H01L31/09H01L31/102H01L31/18H01L31/184H01L31/1804H01L31/1808H01L31/1828H01L31/1844
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Quick Facts
Patent No.
US 10,295,881
App. No.
14/964,864
Granted
May 21, 2019
Kind
B2
Abstract

A synaptic electronic device includes a substrate including a one or more of a semiconductor and an insulator; a photosensitive layer disposed on a surface of the substrate; an electrochromic stack disposed on the photosensitive layer, the electrochromic stack including a first transparent electrode layer, a cathodic electrochromic layer, a solid electrolyte layer, an anodic electrochromic layer, and a second transparent electrode layer; and a pair of electrodes disposed on the photosensitive layer and on opposing sides of the electrochromic stack.

Claims (6)

1. A method for making a synaptic electronic device, the method comprising:

forming an electrochromic stack and a photoresistor on a semiconductor substrate, the photoresistor confined to a single layer and arranged between the semiconductor substrate and the electrochromic stack, and the electrochromic stack disposed directly on the photoresistor, the electrochromic stack switching between bleached and colored states when exposed to light, the electrochromic stack consisting of a first transparent electrode layer, a cathodic electrochromic layer, a solid electrolyte layer, an anodic electrochromic layer, and a second transparent electrode layer; and

forming a pair of electrodes directly on a top surface of the photoresistor and at opposing ends of the photoresistor, such that each electrode of the pair of electrodes extends continuously from a bottom surface of the electrochromic stack to a top surface of the electrochromic stack.

2. The method of claim 1 , wherein the photoresistor changes resistance based on the amount of visible light transmitted through the electrochromic stack.

3. The method of claim 1 , wherein the photoresistor comprises silicon, germanium, cadmium sulfide, cadmium selenide, lead sulfide, indium antimonide, indium gallium arsenide, mercury cadmium telluride, or any combination thereof.

4. The method of claim 1 , wherein the cathodic electrochromic layer comprises tungsten oxide, and the anodic electrochromic layer comprises nickel oxide.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 10, 2015
From: HAN, SHU-JEN
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 037259/0629 →
Continuity (2)
Continuation 14744764 · Jun 19, 2015
Related Publication 20160370681A1 · Dec 22, 2016
Cited By (1)
US 12,372,844