Profile control over a collector of a bipolar junction transistor
View Patent ↗Device structures for a bipolar junction transistor. A layer is formed on a top surface of a substrate. A trench is formed in the layer and has a plurality of sidewalls with a width between an opposite pair of the sidewalls that varies with increasing distance from the top surface of the substrate. A collector pedestal of the bipolar junction transistor is formed in the trench.
1. A device structure for a bipolar junction transistor formed using a substrate, the device structure comprising:
a collector pedestal on a top surface of the substrate, the collector pedestal including a plurality of first sidewalls with a first convex curvature and a plurality of second sidewalls with a second convex curvature;
an intrinsic base on the collector pedestal; and
a first layer including a trench with a first section having a plurality of third sidewalls,
wherein the third sidewalls of the trench are coextensive with the first sidewalls of the collector pedestal, the collector pedestal includes a section that extends laterally over a top surface of the first layer to an edge, and the intrinsic base includes a single crystal section that is coextensive with the section of the collector pedestal and a facet proximate to the edge of the section of the collector pedestal.
2. The device structure of claim 1 wherein the third sidewalls of the trench have a concave curvature that matches the first convex curvature of the first sidewalls.
3. The device structure of claim 1 wherein an opposite pair of the first sidewalls separated by a first width between that varies with increasing distance from the top surface of the substrate.
4. The device structure of claim 3 wherein an opposite pair of the second sidewalls is separated by a second width between that varies with increasing distance from the top surface of the substrate.
5. The device structure of claim 4 wherein the second sidewalls are located between the first sidewalls and the top surface of the substrate, and the second width is greater than the first width.
6. The device structure of claim 1 wherein the collector pedestal is comprised of silicon.
7. The device structure of claim 1 wherein the collector pedestal is comprised of a semiconductor alloy.
8. The device structure of claim 1 wherein the collector pedestal is comprised of silicon germanium, carbon-doped silicon, carbon-doped silicon germanium, or a combination thereof.
9. A device structure for a bipolar junction transistor formed using a substrate, the device structure comprising:
a collector pedestal on a top surface of the substrate, the collector pedestal including a plurality of first sidewalls with a first convex curvature and a plurality of second sidewalls with a second convex curvature;
an intrinsic base on the collector pedestal;
a first layer including a trench with a first section having a plurality of third sidewalls, and
a second layer between the first layer and the top surface of the substrate,
wherein the third sidewalls of the trench are coextensive with the first sidewalls of the collector pedestal, and the trench includes a plurality of fourth sidewalls in the second layer, and the fourth sidewalls of the trench are coextensive with the second sidewalls of the collector pedestal.
10. The device structure of claim 9 wherein the fourth sidewalls of the trench have a concave curvature that matches the second convex curvature of the second sidewalls.
11. The device structure of claim 9 wherein the first layer is comprised of a first dielectric material that etches at a first etch rate, the second layer is comprised of a second dielectric material that etches at a second etch rate, and the first etch rate differs from the second etch rate.
12. The device structure of claim 11 wherein the second etch rate is greater than the first etch rate.
13. The device structure of claim 9 wherein the third sidewalls of the trench have a concave curvature that matches the first convex curvature of the first sidewalls.
14. The device structure of claim 9 wherein the collector pedestal includes a section that extends laterally over a top surface of the first layer to an edge, and the intrinsic base includes a single crystal section that is coextensive with the section of the collector pedestal and a facet proximate to the edge of the section of the collector pedestal.
15. The device structure of claim 9 wherein an opposite pair of the first sidewalls separated by a first width between that varies with increasing distance from the top surface of the substrate.
16. The device structure of claim 9 wherein an opposite pair of the second sidewalls is separated by a second width between that varies with increasing distance from the top surface of the substrate.
17. The device structure of claim 16 wherein the second sidewalls are located between the first sidewalls and the top surface of the substrate, and the second width is greater than the first width.
18. The device structure of claim 9 wherein the collector pedestal is comprised of silicon.
19. The device structure of claim 9 wherein the collector pedestal is comprised of a semiconductor alloy.
20. The device structure of claim 9 wherein the collector pedestal is comprised of silicon germanium, carbon-doped silicon, carbon-doped silicon germanium, or a combination thereof.