Plasma processing apparatus and plasma processing method

1. A plasma processing apparatus comprising:

a processing chamber in which a sample is subjected to plasma processing;

a first radio-frequency power supply supplying a radio-frequency power to generate plasma in the processing chamber;

a sample stage provided with a first electrode and a second electrode, which are embedded in an electrostatic chucking film and cause the sample to be electrostatically chucked to the electrostatic chucking film, and the sample stage on which the sample is placed;

a first DC power supply applying a first DC voltage to the first electrode;

a second DC power supply applying a second DC voltage to the second electrode;

a second radio-frequency power supply supplying a radio-frequency power to the sample stage;

a voltage detection unit detecting a first voltage value and a second voltage value from the radio-frequency power applied to the sample stage; and

a power supply control unit controlling each set voltage of the first DC power supply and the second DC power supply,

wherein the first voltage value, which is detected by the voltage detection unit, is a peak-to-peak voltage value of radio-frequency voltage applied to the sample stage, when the radio-frequency power supplied to the sample stage is time modulated, in a first period of the time modulation having a first amplitude,

the second voltage value, which is detected by the voltage detection unit, is a peak-to-peak voltage value of radio-frequency voltage applied to the sample stage in a second period of the time modulation having a second amplitude smaller than the first amplitude, and

the power supply control unit obtains a time averaged value of a peak-to-peak voltage value of a radio-frequency voltage applied to the sample stage based on the first voltage value, the second voltage value, and a duty ratio of the time modulation, obtains the first DC voltage and the second DC voltage using the obtained time averaged value and an electrostatic chucking voltage, which is a voltage that allows the sample to be electrostatically chucked to the electrostatic chucking film and is a potential difference between both ends of the electrostatic chucking film, and controls the first DC power supply and the second DC power supply so as to output the obtained first DC voltage and second DC voltage, respectively.

2. The plasma processing apparatus according to claim 1 ,

wherein the power supply control unit determines whether a voltage exceeding an upper limit of a dielectric withstand voltage of the electrostatic chucking film is applied to the electrostatic chucking film, and outputs an alarm that promotes exchange of the electrostatic chucking film when the number of times determined as exceeding the upper limit of the dielectric withstand voltage is larger than a threshold value of the number of determinations set in advance.

3. The plasma processing apparatus according to claim 2 ,

wherein the power supply control unit calculates a potential difference between the first electrode and the sample and a potential difference between the second electrode and the sample based on the first DC voltage to be output from the first DC power supply and the second DC voltage to be output from the second DC power supply, and determines that a voltage exceeding the upper limit of the dielectric withstand voltage of the electrostatic chucking film is applied to the electrostatic chucking film in a case in which the calculated potential differences are larger than a withstand voltage use upper-limit threshold value of the electrostatic chucking film set in advance.

4. A plasma processing apparatus comprising:

a processing chamber in which a sample is subjected to plasma processing;

a first radio-frequency power supply supplying a first radio-frequency power to generate plasma in the processing chamber;

a sample stage provided with an electrode, which causes the sample to be electrostatically chucked to an electrostatic chucking film and is embedded in the electrostatic chucking film, and the sample stage on which the sample is placed;

a DC power supply applying a DC voltage to the electrode;

a second radio-frequency power supply supplying a second radio-frequency power to the sample stage; and

a power supply control unit controlling a set voltage of the DC power supply,

wherein the power supply control unit obtains the DC voltage, in a case in which the second radio-frequency power is time modulated, based on an electrostatic chucking voltage, which is a voltage that allows the sample to be electrostatically chucked to the electrostatic chucking film and is a potential difference between both ends of the electrostatic chucking film, a peak-to-peak voltage value of a radio-frequency voltage applied to the sample stage in a first period of the time modulation having a larger amplitude than a second period of the time modulation, and a duty ratio of the time modulation, and controls the DC power supply so as to output the obtained DC voltage.

5. The plasma processing apparatus according to claim 4 ,

wherein the obtained DC voltage is obtained in advance before the sample is subjected to the plasma processing, and the DC voltage obtained in advance is set in a plasma processing condition to define a condition of the plasma processing.

6. The plasma processing apparatus according to claim 4 ,

wherein the obtained DC voltage is sequentially obtained during the plasma processing, and

the power supply control unit controls the DC power supply so as to output the sequentially obtained DC voltage.